All-Silicon On-Chip Polarizer with> 415 nm working bandwidth

Weixi Liu,Daoxin Dai,Yaocheng Shi

DOI: https://doi.org/10.1109/icocn53177.2021.9563697

2021-01-01

Abstract:We proposed and demonstrated an all-silicon TM polarizer by introducing double-slot Euler bending on 340-nm SOI with experimental excess loss 25 dB over> 415-nm working bandwidth.

What problem does this paper attempt to address?

High-performance All-Silicon Polarizer with 415 Nm Bandwidth

Weixi Liu,Daoxin Dai,Yaocheng Shi

DOI: https://doi.org/10.1364/ol.416929

IF: 3.6

2021-01-01

Optics Letters

Abstract:On-chip silicon polarizers have been widely used in polarization controllers. However, there is limited research on all-silicon polarizer covering the whole optical communication band due to the strong waveguide dispersion for silicon waveguides. In this Letter, we demonstrated an all-silicon TE polarizer with high polarization extinction ratio and low insertion loss, working for the whole optical communication band. The device is based on a shallow-etched waveguide realized on a silicon-on-insulator (SOI) platform. The optical field of TE polarization is designed to be tightly confined in the shallow-etched silicon waveguide, while that of TM polarization is weakly confined. As a result, TE polarization propagates through the waveguide with low loss, while TM polarization leaks into the substrate and decays finally. The measurements show that a maximum insertion loss < 0.25 d B and polarization extinction ratio ( P E R ) > 20 d B over an ultrabroad operation band from 1260–1675 nm have been achieved for the proposed polarizer.
Design and Fabrication of a TE-pass Polarizer Based on Silicon Nitride Optical Waveguide

Siyang Zhou,Zhongwen Wang,Jian-Jun He

DOI: https://doi.org/10.1117/12.2656995

2022-01-01

Abstract:An on-chip TE-pass polarizer working near 850nm band is designed and fabricated on silicon nitride platform. The structure is very simple, using a straight silicon nitride waveguide separated from a metal strip by a low index silicon oxide spacer layer. By optimizing the thickness of the spacer layer, the metal strip introduces more loss for TM mode than TE mode. The measured extinction ratio of the fabricated device is around 20dB over a 16nm wavelength range from 837nm to 853nm for a 3mm-long polarizer.
Silicon Photonic Polarization Insensitive Filter with Low Polarization Dependent Extinction Radio

Tingge Dai,Gencheng Wang,Yuehai Wang,Yubo Li,Hui Yu,Xiaoqing Jiang,Jianyi Yang

DOI: https://doi.org/10.1364/cleo_si.2017.sf1i.4

2017-01-01

Abstract:We proposed and experimentally demonstrated a novel polarization-insensitive bandstop filter with a low polarization dependent extinction radio (<1dB) and low polarization dependent loss (<1.5dB) on a SOI chip. The insertion loss is about 2.6 dB.
Ultra-High Performance All-Silicon TM Polarizer Covering O-U Optical Communication Bands

Weixi Liu,Shi Zhao,Huan Li,Daoxin Dai,Yaocheng Shi

DOI: https://doi.org/10.1109/JLT.2022.3200374

IF: 4.7

2022-01-01

Journal of Lightwave Technology

Abstract:Polarizers are the essential components to purify the polarization in the system demanding for the single polarization propagation. Polarizers with broad working bandwidth, low excess loss (EL) and large polarization extinction ratio (PER) are usually preferred. TE polarizers with ultrahigh performance have been demonstrated. However, the bandwidth of the previously reported transverse magnetic (TM) integrated polarizers is still limited to be < similar to 160 nm when the EL < 1 dB and PER > 20 dB are simultaneously satisfied. In this paper, an all-silicon integrated TM polarizer with > 415 nm working bandwidth from 1260 nm to 1675 nm is experimentally demonstrated. The device consists of a double slot structure with 180 degrees Euler bending on silicon waveguides. The effective refractive index (ERI) for TE polarization in the double slot structure is lower than that of the silica buffer/cladding while ERI for TM polarization is much larger than that of the silica buffer/cladding. Thus, TE polarization will leak into the substrate while TM polarization can propagate through the device with low loss. The measured transmission spectra for the fabricated polarizer show low EL < 0.9 dB and large PER > 25 dB over an ultrabroad band beyond the O-, E-, S-, C-, L-and U- bands.
An Integrated Surface Plasmonic TE-Pass Polarizer on a Silica-on-Silicon Waveguide

Heliang Shen,Xuan She,Fei Huang,Wen Fan,Hongshuo Liu,Kan Chen,Ran Bi,Lei Wang,Xiaowu Shu

DOI: https://doi.org/10.1109/lpt.2024.3351698

IF: 2.6

2024-01-01

IEEE Photonics Technology Letters

Abstract:We report an integrated implementation of a surface plasmonic TE-pass polarizer on a silica-on-silicon waveguide. The effect of waveguide width and length on polarization extinction ratio (PER) were investigated. For a 10 mm device, PER in excess of 48 dB with TE mode loss of approximately 0.8 dB was recorded. In addition, we experimentally demonstrate a wavelength dependence of PER smaller than 3 dB with a width of 5.5- 6.5 mu m device over the C band from 1520-1580 nm. We also present a theoretical analysis and numerical simulation of this architecture that are in good agreement with each other and the experimental results. By improving the fabrication process and PER measurement method, over 60 dB PER and less 0.1 dB TE mode loss can be obtained for a 10 mm polarizer according to our model, which is expected to be widely applicated in sensors such as optical gyroscopes.
An Ultra-Broadband Polarizing Beam Splitter/coupler Using Asymmetric-Waveguides

Qinghuan Xu,Jifang Tao,Chonglei Sun,Jia Zhao,Zuojia Wang,Liuge Du,Chuanning Niu,Xun Li,Weiping Huang

DOI: https://doi.org/10.1016/j.optcom.2019.124424

IF: 2.4

2020-01-01

Optics Communications

Abstract:A high-performance polarizing beam splitter (PBS) is demonstrated by using asymmetrical directional couplers on a 220nm-thick silicon-on-insulator (SOI) photonics platform. The extinction ratio of the PBS with cascaded directional couplers is > 35 dB for both TE and TM polarizations around the central wavelength of 1550 nm. The bandwidths for an extinction ratio of 20 dB and 30 dB are 275 nm and 230 nm, respectively, for TE polarization, as well as > 300 nm and 225 nm, respectively, for TM polarization. The insertion losses for TE polarization are < 0.5 dB with a bandwidth of > 300 nm. The insertion losses for TM polarization are < 1 dB and < 0.5 dB with a bandwidth of 218 nm and 174 nm, respectively.
Anisotropic Metamaterial-Assisted All-Silicon Polarizer with 415-Nm Bandwidth

Hongnan Xu,Daoxin Dai,Yaocheng Shi

DOI: https://doi.org/10.1364/prj.7.001432

IF: 7.6

2019-01-01

Photonics Research

Abstract:Polarizers have been widely used in various optical systems to reduce polarization cross talk. The polarizers based on the silicon nanowire waveguide can provide chip-scale device size and a high polarization extinction ratio. However, the working bandwidth for the on-chip silicon polarizers is always limited ( 20 dB) over a >415 nm bandwidth from 1.26 to 1.675 μm, which is at least fourfold better than what has been demonstrated in all previous works. To the best of our knowledge, such a device is the first all-silicon polarizer that covers O-, E-, S-, C-, L-, and U-bands.
Silicon and Silicon Nitride Based Bilayer Polarization-insensitive Optical Filter

Nannan Ning,Xiaofei Wang,Qikai Huang,Hui Yu,Yuehai Wang,Jianyi Yang

DOI: https://doi.org/10.1117/12.2643367

2022-01-01

Abstract:A polarization-insensitive optical filter based on silicon and silicon nitride film is demonstrated. The lateral-shift apodization is introduced to suppress the sidelobes. The fabricated optical filter shows polarization-insensitive performances with large 3dB-bandwidths of 3.5-5.1 nm, low losses of 1.72-1 dB, decent SLSRs of 18.5-19.1 dB for both polarizations.
Fabrication-Friendly On-Chip Silicon Polarizer Based on Polarization-Selective Corner Mirrors

Hongnan Xu,Daoxin Dai,Yaocheng Shi

DOI: https://doi.org/10.1109/LPT.2021.3085834

IF: 2.6

2021-01-01

IEEE Photonics Technology Letters

Abstract:We propose and demonstrate a fabrication-friendly on-chip polarizer based on polarization-selective corner mirrors. The total internal reflection angles are distinct between TE and TM modes due to the strong birefringence of silicon-on-insulator (SOI) waveguide. Thus, by properly choosing the inclination angle, TE mode can be completely reflected at each corner mirror with negligible losses, whereas TM mode can be efficiently filtered out. The minimum feature size of such polarizer is as large as 400 nm. The measurement results show low excess losses of <; 1.2 dB and high extinction ratios of >20 dB over a 200-nm bandwidth. Such high performance can be maintained even with a large width deviation of > ±50 nm.
Ultrahigh Extinction Ratio and Ultra-Low Insertion Loss Silicon TE Polarizer Covering 1260-1675 Nm Bandwidth

Xiao Li,Zongxin Lin,Sailing He

DOI: https://doi.org/10.1364/ol.458871

IF: 3.6

2022-01-01

Optics Letters

Abstract:An ultra-broadband TE polarizer with outstanding performance is proposed and demonstrated on a 220 nm-thick silicon-on-insulator platform. The proposed TE polarizer consists of six cascaded directional couplers assisted by subwavelength grating (SWG) structures and two Euler bends. The SWG is introduced to control the coupling strength of the fundamental TE and TM modes. Simulations show that our proposed TE polarizer possesses ultra-low insertion loss (IL < 0.3 dB) for the fundamental TE mode and an ultrahigh polarization extinction ratio (PER > 35 dB) for the fundamental TM mode covering all communication bands from 1260 nm to 1675 nm. The experimental results show that the fabricated TE polarizer has excellent performance of IL < 0.6 dB and PER > 35 dB over a 210 nm bandwidth, which is limited by the measurement equipment. To the best of our knowledge, our proposed TE polarizer is the first single-etched all-silicon TE polarizer with such high PER covering all communication bands.
Silicon-based Polarization-Insensitive Optical Filter with Dual-Gratings

Dajian Liu,Daoxin Dai

DOI: https://doi.org/10.1364/oe.27.020704

IF: 3.8

2019-01-01

Optics Express

Abstract:A silicon-based polarization-insensitive optical filter is proposed and demonstrated. For the present on-chip polarization-insensitive optical filter, there is a dual-polarization mode (de)multiplexer, a TE-type multimode waveguide grating (MWG) with triangular corrugations and a TM-type MWG with rectangular corrugations. Here the triangular corrugations are introduced to reduce the undesired reflection and suppress the Fabry-Parot resonance. Furthermore, lateral-shift apodization is introduced for both two types of MWGs to suppress the sidelobes. For the fabricated device, the measured 3 dB-bandwidth is as large as ∼11 nm and the excess loss is ∼1.5 dB for both polarizations, while the sidelobe suppression ratios are 23 dB and 17 dB for TE and TM polarizations, respectively.
An Asymmetrical Sinx-Based Polarization Beam Splitter at 810 Nm

Shisong Luo,Dongning Liu,Jiaquan Kong,Zengkai Shao,Zeru Wu,Pengfei Xu,Guoxuan Zhu,Yi Wang,Lin Liu,Yanfeng Zhang,Yujie Chen,Siyuan Yu

DOI: https://doi.org/10.1364/acpc.2017.s3d.5

2017-01-01

Abstract:An asymmetrical SiNx-based polarization beam splitter at 810 nm are proposed and fabricated in this work. The simulation results show that the extinction ratio of > 20 dB and the insertion loss of < 0.6 dB can be achieved for both transverse-electric (TE) and transverse magnetic (TM) polarizations at 810 nm.
Polarization-insensitive Electro-Optical Modulator Based on Polymer-Filled Silicon Cross-Slot Waveguide

Wanjun Wang,Haifeng Zhou,Jianyi Yang,Minghua Wang

DOI: https://doi.org/10.1117/12.852143

2009-01-01

Abstract:A silicon cross-slot waveguide filled with electro-optic polymer is proposed to release the polarization-dependent issue of the electro-optic modulator. There are two slots in both the horizontal direction and vertical direction, so this waveguide structure can confine both the TE and TM modes. The four silicon regions can be lightly doped as the electrodes. There is slanted electric field in the slot region when the voltages are applied on the electrodes. The electric field component act at principal optical axis whose electric-optic (EO) coefficient is r33 or r13 can be adjusted by changing the voltages on the four electrodes. With optimal voltages, the effective refractive index of the TE and TM modes can be changed equally. The Mach-Zehnder modulator based on cross-slot waveguide can achieve polarization-insensitive.
On-Chip Silicon TE-Pass Polarizer Based on Asymmetrical Directional Couplers

Hongnan Xu,Yaocheng Shi

DOI: https://doi.org/10.1109/lpt.2017.2693223

IF: 2.6

2017-01-01

IEEE Photonics Technology Letters

Abstract:An on-chip silicon TE-pass polarizer is proposed and demonstrated. The proposed polarizer is realized by asymmetrical directional couplers assisted with sharp bending and tapered waveguides. The TM0 mode is converted into TM1 mode through the asymmetrical directional coupler and then filtered out by the bending and taper, while TE0 mode goes through with negligible coupling due to the phase mismatch. The measured extinction ratio at central wavelength is 29.8 dB, while the -15 dB bandwidth is >80 nm.
A novel polarization-insensitive optical filter on silicon

Dajian Liu,Daoxin Dai

DOI: https://doi.org/10.1109/ICOCN.2019.8934334

2019-01-01

Abstract:A silicon-based polarization-insensitive optical filter is designed and demonstrated by using dual multimode-waveguide-gratings. For the ~300μm-long device, the 3dB-bandwidth is ~11nm and the excess loss is ~1.5dB for both polarizations.
A Compact Polarization Beam Splitter Based on Silicon-on-Insulator

Mei Yin,Yawen Huang,Huaxiang Yi,Wei Yang,Yanping Li,Xingjun Wang,Hongbin Li

DOI: https://doi.org/10.1364/acpc.2013.af2b.9

2013-01-01

Abstract:This letter proposes a compact cascaded MMI-based polarization beam splitter on silicon-on-insulator, which demonstrates 20 nm bandwidth for transverse-electric polarization and 35 nm bandwidth for transverse-magnetic polarization with extinction ratio more than 20 dB experimentally.
High-performance and ultra-wide bandwidth silicon TM polarizer with suppressed reflection utilizing a tailored contra-mode conversion Bragg grating

Shengbao Wu,Qianli Yu,Lei Zhang,Zhenzhao Guo,Jinbiao Xiao,Steve Yao

DOI: https://doi.org/10.1364/ol.537699

IF: 3.6

2024-08-31

Optics Letters

Abstract:Shengbao Wu, Qianli Yu, Lei Zhang, Zhenzhao Guo, Jinbiao Xiao, X. Steve Yao We present a compact TM polarizer with high polarization extinction ratio (PER), low loss, and suppressed reflection over an ultra-wide ... [Opt. Lett. 49, 4995-4998 (2024)]

optics
Low-loss ultracompact transverse-magnetic-pass polarizer with a silicon subwavelength grating waveguide.

Xiaowei Guan,Pengxin Chen,Sitao Chen,Peipeng Xu,Yaocheng Shi,Daoxin Dai

DOI: https://doi.org/10.1364/OL.39.004514

IF: 3.6

2014-01-01

Optics Letters

Abstract:An ultracompact and low-loss TM-pass polarizer on silicon is proposed and demonstrated experimentally with a subwavelength-grating (SWG) waveguide. The SWG waveguide is designed to support Bloch mode for TM polarization so that the incident TM-polarized light goes through the SWG waveguide with very low excess loss. On the other hand, for TE polarization, the SWG waveguide works as a Bragg reflector, and consequently the incident TE-polarized light is reflected. For a fabricated similar to 9 mu m long polarizer (with the period number N = 20), the measured extinction ratio is similar to 27 dB and the excess loss is similar to 0.5 dB at the central wavelength 1550 nm. The bandwidth to achieve an extinction ratio of 20 dB is about 60 nm (from 1520 to 1580 nm). When increasing the period number to N = 40, the measured extinction ratio is up to 40 dB (which is not as high as the expected theoretical value 65 dB due to the limit of the measurement system). (C) 2014 Optical Society of America
On-Chip Polarization Handling for Silicon Nanophotonic Integrated Circuits

Daoxin Dai,Jian Wang

DOI: https://doi.org/10.1117/12.2000595

2012-01-01

Abstract:Silicon-on-insulator (SOI) nanowire provides a very promising way to realize the future large-scale nano-photonic integrated circuits because of the CMOS compatibility and the ability for ultrasharp bending. The giant birefringence of SOI nanowires makes on-chip polarization handling become very important and useful for many applications, like polarization-transparent silicon photonics, coherent optical communications, and on-chip quantum photonics. In this paper, our recent work on on-chip polarization handling is reviewed and summarized, including polarization-beam splitters, polarization rotators, as well as polarization splitter rotators.
Silicon-On-Insulator Polarization Splitter Using Two Horizontally Slotted Waveguides

Yang Yue,Lin Zhang,Jeng-Yuan Yang,Raymond G. Beausoleil,Alan E. Willner

DOI: https://doi.org/10.1364/ol.35.001364

2010-01-01

Abstract:We propose and analyze a short-length silicon-on-insulator polarization splitter using two horizontally slotted silicon waveguides. A polarization splitter with a 46.7 microm length and a 22 dB extinction ratio (ER) is achieved. Around 1550 nm, it also exhibits an 18 nm bandwidth for ER>20 dB. The effects of the slot thickness, the waveguide spacing, and the refractive index of the slot on the splitting length and ER are investigated.

All-Silicon On-Chip Polarizer with> 415 nm working bandwidth

High-performance All-Silicon Polarizer with 415 Nm Bandwidth

Design and Fabrication of a TE-pass Polarizer Based on Silicon Nitride Optical Waveguide

Silicon Photonic Polarization Insensitive Filter with Low Polarization Dependent Extinction Radio

Ultra-High Performance All-Silicon TM Polarizer Covering O-U Optical Communication Bands

An Integrated Surface Plasmonic TE-Pass Polarizer on a Silica-on-Silicon Waveguide

An Ultra-Broadband Polarizing Beam Splitter/coupler Using Asymmetric-Waveguides

Anisotropic Metamaterial-Assisted All-Silicon Polarizer with 415-Nm Bandwidth

Silicon and Silicon Nitride Based Bilayer Polarization-insensitive Optical Filter

Fabrication-Friendly On-Chip Silicon Polarizer Based on Polarization-Selective Corner Mirrors

Ultrahigh Extinction Ratio and Ultra-Low Insertion Loss Silicon TE Polarizer Covering 1260-1675 Nm Bandwidth

Silicon-based Polarization-Insensitive Optical Filter with Dual-Gratings

An Asymmetrical Sinx-Based Polarization Beam Splitter at 810 Nm

Polarization-insensitive Electro-Optical Modulator Based on Polymer-Filled Silicon Cross-Slot Waveguide

On-Chip Silicon TE-Pass Polarizer Based on Asymmetrical Directional Couplers

A novel polarization-insensitive optical filter on silicon

A Compact Polarization Beam Splitter Based on Silicon-on-Insulator

High-performance and ultra-wide bandwidth silicon TM polarizer with suppressed reflection utilizing a tailored contra-mode conversion Bragg grating

Low-loss ultracompact transverse-magnetic-pass polarizer with a silicon subwavelength grating waveguide.

On-Chip Polarization Handling for Silicon Nanophotonic Integrated Circuits

Silicon-On-Insulator Polarization Splitter Using Two Horizontally Slotted Waveguides