Abstract:This paper introduces a 4‐channel 24‐ to 28‐GHz RF front‐end MIMO system designed for 5G applications. The TX and RX chips are fabricated using 130‐nm SiGe BiCMOS technology. The measurement results of a single‐channel indicate a gain of 15.5‐dB and −25‐dBm IP1dB for the RX chip and 26.5‐dB and 10‐dBm OP1dB for the TX chip while each chip occupies 0.83 mm2 . The RX chip exhibits a measured NF of 4.3 dB at 26 GHz. Both Tx and Rx chips achieve 6‐bit phase control and 4‐bit amplitude control with low RMS phase error of 2.6° and gain error of 0.3 dB. Low RMS gain and phase errors over a wide bandwidth are attributed to the high precision DAC employed in the control of VGA and PS. This paper introduces a 4‐channel 24‐ to 28‐GHz RF front‐end MIMO system designed for 5G applications. The transmitter (Tx) and receiver (Rx) chips are fabricated using 130‐nm SiGe BiCMOS technology. The chips contain a 6‐bit phase shifter (PS), 1‐bit attenuator (ATT), 3‐bit variable gain amplifier (VGA), serial peripheral interface (SPI), Wilkinson combiner, power amplifier (PA), and low noise amplifier (LNA). The designed vector‐sum PS, employing a current DAC for semi‐digitization, achieves a 6‐bit phase resolution with minimal root‐mean‐square (RMS) phase error. This design choice allows for the high bit control of the current DAC within a compact chip area. Four‐bit amplitude control is obtained with VGA and ATT. The VGA provides 8‐dB amplitude range while ATT enlarges overall amplitude control with additional 8 dB. L‐R‐L phase compensation technique is utilized to reduce the phase error that arises from ATT. The sub‐blocks are designed to operate with low DC power such that the DC power consumption of overall RX and TX is 50 and 97 mW, respectively. The measurement results of a single‐channel indicate a gain of 15.5‐dB and −25‐dBm IP1dB for the RX chip and 26.5‐dB and 10‐dBm OP1dB for the TX chip while each chip occupies 0.83 mm2 . The RX chip exhibits a measured noise figure (NF) of 4.3 dB at 26 GHz. Both Tx and Rx chips achieve 6‐bit phase control and 4‐bit amplitude control with low RMS phase error of 2.6° and gain error of 0.3 dB. Low RMS gain and phase errors over a wide bandwidth are attributed to the high precision DAC employed in the control of VGA and PS. Both chips are flip‐chip packaged and undergo upconversion/downconversion via external mixers on a printed circuit board (PCB). System‐level tests with 64‐quadrature amplitude modulation (QAM) show an error vector magnitude (EVM) of 2.72% at 27 GHz for RX and 5.02% at 24 GHz for TX, with a 50‐MBaud modulated signal applied at a data rate of 300 MBps.

21.1 A 28GHz CMOS Phased-Array Beamformer Utilizing Neutralized Bi-Directional Technique Supporting Dual-Polarized MIMO for 5G NR

A 28-GHz CMOS Phased-Array Beamformer Utilizing Neutralized Bi-Directional Technique Supporting Dual-Polarized MIMO for 5G NR

A 39 GHz Dual-Channel Transceiver Chipset with an Advanced LTCC Package for 5G Multi-Beam MIMO Systems

A CMOS Dual-Polarized Phased-Array Beamformer Utilizing Cross-Polarization Leakage Cancellation for 5G MIMO Systems

A Four-Element 7.5–9-Ghz Phased-Array Receiver with 1–8 Simultaneously Reconfigurable Beams in 65-Nm CMOS

A 4-Element 7.5-9 GHz Phased Array Receiver with 8 Simultaneously Reconfigurable Beams in 65 Nm CMOS Technology

A 39-GHz CMOS Bidirectional Doherty Phased- Array Beamformer Using Shared-LUT DPD With Inter-Element Mismatch Compensation Technique for 5G Base Station

A 24–30-GHz 256-Element Dual-Polarized 5G Phased Array Using Fast On-Chip Beam Calculators and Magnetoelectric Dipole Antennas

A 28-GHz CMOS Phased-Array Transceiver Based on LO Phase-Shifting Architecture With Gain Invariant Phase Tuning for 5G New Radio

A 28-GHz Beam-Space MIMO RX With Spatial Filtering and Frequency-Division Multiplexing-Based Single-Wire IF Interface

A 28ghz Cmos Phased-Array Transceiver Featuring Gain Invariance Based On Lo Phase Shifting Architecture With 0.1-Degree Beam-Steering Resolution For 5g New Radio

A 39-Ghz CMOS Bi-Directional Doherty Phased-Array Beamformer Using Shared-LUT DPD with Inter-Element Mismatch Compensation Technique for 5G Base-Station

A 28ghz CMOS Differential Bi-Directional Amplifier for 5G NR

A 16-Channel, 28/39GHz Dual-Polarized 5G FR2 Phased-Array Transceiver IC with a Quad-Stream IF Transceiver Supporting Non-Contiguous Carrier Aggregation up to 1.6GHz BW

A mm-Wave Concurrent Dual-Band Dual-Beam Phased Array Receiver Front-End in 22-nm CMOS FDSOI

An 8-Element 5G Multistandard 28-/39-GHz Dual-Band, Dual-Polarized Phased Array for Compact Systems

A Novel Integrated Multi-Beam Antenna Array for Low-complex Massive MIMO Base Station

A Dual-Polarized Aperture-Sharing Phased-Array Antenna for 5G (3.5, 26) GHz Communication

A 24‐ to 28‐GHz 4×1 MIMO Transmitter/Receiver for 5G Phased‐Array Applications With High Amplitude and Phase Control