Infrared Photodetectors: Extrinsic Photoconduction Induced Short‐Wavelength Infrared Photodetectors Based on Ge‐Based Chalcogenides (Small 4/2021)
Ting He,Zhen Wang,Ruyue Cao,Qing Li,Meng Peng,Runzhang Xie,Yan Huang,Yang Wang,Jiafu Ye,Peisong Wu,Fang Zhong,Tengfei Xu,Hailu Wang,Zhuangzhuang Cui,Qinghua Zhang,Lin Gu,Hui‐Xiong Deng,He Zhu,Chongxin Shan,Zhongming Wei,Weida Hu
DOI: https://doi.org/10.1002/smll.202170013
IF: 13.3
2021-01-01
Small
Abstract:<p>The cover shows the extrinsic photoconduction induced Ge‐based polarization‐sensitive photodetector. The structure of the Ge‐based photodetector is shown in the upper left corner. The amplified crystal structure of GeSe with several Ge vacancies is shown in the middle. Additionally, the image of excess carriers being excited by a polarized light is shown in the lower right corner. In article number <a href="https://doi.org/10.1002/smll.202006765">2006765</a>, Qing Li, Zhongming Wei, Weida Hu, and co‐workers investigate the extrinsic photoconduction effect in 2D materials for the first time and provide a strategy to broaden the detection waveband of photodetectors. </p>
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology