New insights into interfacial photocharge transfer in TiO2/C3N4 heterostructures: effects of facets and defects

Yuxuan Wu,Li-Min Liu,Xiaoqiang An,Tingcha Wei

DOI: https://doi.org/10.1039/c9nj00027e

IF: 3.3

2019-01-01

New Journal of Chemistry

Abstract:The interfacial transfer mechanism of charge carriers in TiO2/g-C3N4 heterostructures was highly dependent on crystal facets and structural defects.

What problem does this paper attempt to address?

New insights into interfacial photocharge transfer in TiO2/C3N4 heterostructures: effects of facets and defects

Yuxuan Wu,Li-Min Liu,Xiaoqiang An,Tingcha Wei

DOI: https://doi.org/10.1039/c9nj00027e

IF: 3.3

2019-01-01

New Journal of Chemistry

Abstract:More efforts are being made in hybridizing TiO2 photocatalysts with graphene-analogue g-C3N4. However, a fundamental understanding of the interfacial behavior of charge carriers is still lacking. In this paper, the impact of exposed facets and structural defects on the charge transfer mechanism around heterostructured interfaces was investigated. Due to the electron-rich feature and the relatively lower CB position, integrating g-C3N4 with 101-TiO2 facilitated the Z-scheme recombination of electrons in the CB of 101-TiO2 and holes in the VB of g-C3N4. Creating oxygen vacancies in TiO2 resulted in the 4-and 24-fold increased photoactivity than blank TiO2 and g-C3N4. 001-Facets of TiO2 however were prone to accept electrons from the CB of g-C3N4, forming the conventional Type II junction with poor photoreduction ability. For 001-TiO2/ g-C3N4 heterojunctions, nitrogen vacancies in g-C3N4 played a more important role in separating the charge carriers. Our discovery provides an efficient way to design high-performance TiO2-based heterostructured photocatalysts through facet and defect engineering.
Tunable Two-Dimensional Interfacial Coupling in Molecular Heterostructures

Beibei Xu,Himanshu Chakraborty,Vivek Yadav,Zhuolei Zhang,Michael L. Klein,Shenqiang Ren

DOI: https://doi.org/10.1038/s41467-017-00390-1

IF: 16.6

2017-01-01

Nature Communications

Abstract:Two-dimensional van der Waals heterostructures are of considerable interest for the next generation nanoelectronics because of their unique interlayer coupling and optoelectronic properties. Here, we report a modified Langmuir-Blodgett method to organize two-dimensional molecular charge transfer crystals into arbitrarily and vertically stacked heterostructures, consisting of bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF)/C60 and poly(3-dodecylthiophene-2,5-diyl) (P3DDT)/C60 nanosheets. A strong and anisotropic interfacial coupling between the charge transfer pairs is demonstrated. The van der Waals heterostructures exhibit pressure dependent sensitivity with a high piezoresistance coefficient of -4.4 × 10-6 Pa-1, and conductance and capacitance tunable by external stimuli (ferroelectric field and magnetic field). Density functional theory calculations confirm charge transfer between the n-orbitals of the S atoms in BEDT-TTF of the BEDT-TTF/C60 layer and the π* orbitals of C atoms in C60 of the P3DDT/C60 layer contribute to the inter-complex CT. The two-dimensional molecular van der Waals heterostructures with tunable optical-electronic-magnetic coupling properties are promising for flexible electronic applications.Two-dimensional van der Waals heterostructures are of interest due to their unique interlayer coupling and optoelectronic properties. Here authors develop a Langmuir-Blodgett method to organize charge transfer molecular heterostructures with externally tunable conductance and capacitance and broadband photoresponse.
The origin of enhanced photocatalytic activity in g-C3N4/TiO2 heterostructure revealed by DFT calculations

Xiaohui Yu,Juan Xie,Qinqin Liu,Huilong Dong,Youyong Li

DOI: https://doi.org/10.1016/j.jcis.2021.02.103

IF: 9.9

2021-07-01

Journal of Colloid and Interface Science

Abstract:The oxide-based hybrid photocatalysts, especially TiO2-based, have attracted tremendous attentions because of their prominent photocatalytic performance. Currently, theoretical understandings on the relationship between the interface of TiO2-based heterostructures and their photocatalytic activity are still lacking. Here we systematically investigated the effects of interface structure on electronic properties of the g-C3N4/TiO2 heterostructure using density functional theory (DFT) calculation. The interaction between monolayer g-C3N4 and TiO2 surface [with Anatase (101)/(001) facet] was explored, where a van der Waals heterojunction is formed. The presence of oxygen vacancy, nitrogen doping and hydrogen passivation on TiO2 surface is found to dramatically alter the electronic properties of g-C3N4/TiO2 heterostructure. Furthermore, the enhanced separation of electron - hole pairs and inhibited carrier recombination in the g-C3N4/TiO2 interface was analyzed based on the Bader charge analysis and charge density difference. The theoretical analysis revealed that oxygen vacancy and hydrogen passivation on TiO2 A001 surface induces the more significant charge separation, which may be the origin of enhanced photocatalytic efficiency of the g-C3N4/TiO2 heterostructures.

chemistry, physical
Interfacial Charge Transfer in MoS2/TiO2 Heterostructured Photocatalysts: The Impact of Crystal Facets and Defects

Tingcha Wei,Woon Ming Lau,Xiaoqiang An,Xuelian Yu

DOI: https://doi.org/10.3390/molecules24091769

IF: 4.6

2019-01-01

Molecules

Abstract:One of the most challenging issues in photocatalytic hydrogen evolution is to efficiently separate photocharge carriers. Although MoS2 loading could effectively improve the photoactivity of TiO2, a fundamental understanding of the charge transfer process between TiO2 and MoS2 is still lacking. Herein, TiO2 photocatalysts with different exposed facets were used to construct MoS2/TiO2 heterostructures. XPS, ESR, together with PL measurements evidenced the Type II electron transfer from MoS2 to {001}-TiO2. Differently, electron-rich characteristic of {101}-faceted TiO2 were beneficial for the direct Z-scheme recombination of electrons in TiO2 with holes in MoS2. This synergetic effect between facet engineering and oxygen vacancies resulted in more than one order of magnitude enhanced hydrogen evolution rate. This finding revealed the elevating mechanism of constructing high-performance MoS2/TiO2 heterojunction based on facet and defect engineering.
Interfacial charge transfer and interaction in the MXene/TiO2 heterostructures

Lihua Xu,Tao Wu,Paul R. C. Kent,De-en Jiang

DOI: https://doi.org/10.48550/arXiv.2107.09180

2021-07-19

Materials Science

Abstract:Hybrid materials of MXenes (2D carbides and nitrides) and transition-metal oxides (TMOs) have shown great promise in electrical energy storage and 2D heterostructures have been proposed as the next-generation electrode materials to expand the limits of current technology. Here we use first principles density functional theory to investigate the interfacial structure, energetics, and electronic properties of the heterostructures of MXenes (Tin+1CnT2; T=terminal groups) and anatase TiO2. We find that the greatest work-function differences are between OH-terminated-MXene (1.6 eV) and anatase TiO2(101) (6.4 eV), resulting in the largest interfacial electron transfer (~0.9 e/nm2 across the interface) from MXene to the TiO2 layer. This interface also has the strongest adhesion and further strengthened by hydrogen bond formation. For O-, F-, or mixed O-/F- terminated Tin+1Cn MXenes, electron transfer is minimal and interfacial adhesion is weak for their heterostructures with TiO2. The strong dependence of the interfacial properties of the MXene/TiO2 heterostructures on the surface chemistry of the MXenes will be useful to tune the heterostructures for electric-energy-storage applications.
A new understanding of the photocatalytic mechanism of the direct Z-scheme g-C3N4/TiO2 heterostructure.

Jiaguo Yu,Jianjun Liu,B. Cheng

DOI: https://doi.org/10.1039/C6CP06147H

2016-11-16

Abstract:Constructing a TiO2 based heterostructure is a very effective strategy for enhancing photocatalytic performance. The details of the electronic structure, interfacial interaction, and photogenerated carrier separation are important for explaining the photocatalytic properties of a heterostructure. Herein, the density of states, charge distribution, and the band offset of the monolayer g-C3N4/TiO2 heterojunction are systematically investigated through the hybrid DFT method. Results indicated that the valence band offset and the conduction band offset of the g-C3N4/TiO2 heterostructure were 0.40 and 0.18 eV, respectively. Interfacial interaction made the TiO2 surface with negative charge, whereas the g-C3N4 surface with positive charge, which led to the formation of a built-in electric field at the interface. Under illumination, the built-in electric field accelerates the transfer of photoexcited electrons in the CB of TiO2 into the VB of g-C3N4, thus resulting in the photoexcited electrons and holes naturally accumulating in the CB of g-C3N4 and the VB of TiO2, respectively. The photoexcited electrons and holes gathering in different surface regions efficiently prolonged the lifetime of photogenerated carriers. Meanwhile, electrons in the CB of g-C3N4 and holes in the VB of TiO2 had a stronger redox ability. Therefore, g-C3N4/TiO2 is a direct Z-scheme photocatalyst, and the Z-scheme heterostructure mechanism can well explain the improved photocatalytic activity of the g-C3N4/TiO2 heterostructure.

Chemistry,Medicine,Materials Science
New Insights into Defect‐Mediated Heterostructures for Photoelectrochemical Water Splitting

Xiaoqiang An,Tong Li,Bo Wen,Junwang Tang,Ziyu Hu,Li-Min Liu,Jiuhui Qu,C. P. Huang,Huijuan Liu

DOI: https://doi.org/10.1002/aenm.201502268

IF: 27.8

2016-01-01

Advanced Energy Materials

Abstract:Understanding the interfacial electronic structures of heterojunctions, a challenging undertaking, is extremely important to the design of photoelectrodes for efficient water splitting. The heterostructured interfaces in terms of crystal defects at the atomic‐level exemplified by TiO2/BiVO4 are studied. Results from both experimental observations and theoretical calculations clearly confirm the spontaneous formation of defective interfaces in the heterostructures. TiO2/BiVO4 junction with engineered interfacial defects can efficiently increase the carrier density and extend the lifetime of electrons. The inherent phenomenon of defective electronic structures in different heterostructures creates a significant impact on their photoelectrochemical performance. The synergetic effect between defect‐mediated mechanism and organic quantum dots sensitization yields significantly increased photoconversion efficiency, which is even superior to that of common metal sulfide sensitized ones. This result demonstrates an approach worthy for the design and fabrication of defect‐mediated heterostructures for water splitting, without utilizing harmful metal sulfides. Moreover, new insights into the influence of intrinsic defects on the interfacial charge transfer process between two different semiconductors for energy‐related applications have also been provided.
Theoretical Study on Transport-Scheme Conversion of G-C3n4/tio2 Heterojunctions by Oxygen Vacancies

Mei-Yue Yan,Zhen-Yi Jiang,Ji-Ming Zheng,Yan-Min Lin,Zhi-Yong Zhang

DOI: https://doi.org/10.1016/j.apsusc.2020.147318

IF: 6.7

2020-01-01

Applied Surface Science

Abstract:The energy band alignments, charge transfers and distributions of square of electronic wavefunctions of g-C3N4/(101)-TiO2 and g-C3N4/(001)-TiO2 heterojunctions with oxygen vacancies are investigated with first principles calculations. Our theoretical results show that TiO2 and g-C3N4 can contact with each other to form a van der Waals heterojunction. Three heterostructures for g-C3N4/(101)-TiO2, g-C3N4/V-O-(101)-TiO2, and g-C3N4/(001)-TiO2 are Z-scheme heterojunctions while g-C3N4/V-O-(001)-TiO2 is type-II heterojunction. The energy levels of (001) surface is higher than that of (101) surface in titanium dioxide, and the donor level formed by oxygen vacancy further increases its Fermi level. So in the process of forming heterojunction, the electrons will transfer from titanium dioxide to carbon nitride instead of from carbon nitride to titanium dioxide to form type-II heterojunction for g-C3N4/V-O-(001)-TiO2. There exist several localized and delocalized shallow defect levels in energy gap of the g-C3N4/V-O-(101)-TiO2 heterojunction. Its wavefunction of delocalized shallow defect level can span both sides of the heterojunction and play an important role in promoting photogenerated electrons migration from titanium dioxide to carbon nitride. However, there are partially localized deep defect levels in the energy gap of g-C3N4/V-O-(001)-TiO2 heterojunction, whose wavefunctions only distribute over titania. They only act as the recombination centers of electron-hole pairs and makes the photocatalytic effect worse. Our calculations reveal the effects of delocalized wavefunction of shallow defect level covering both sides of heterojunction on photocatalytic activity in g-C3N4/TiO2 heterojunctions and provide a way to convert the transfer scheme of heterojunctions by introducing impurities.
Spatial Separation of Photogenerated Charges on the Anisotropic Facets of Cuprous Oxide

Tianhui Su,Chunlei Yang,Fushuang Niu,Yanbo Hua,Qinshang Xu,Ke Hu,Liming Zhang

DOI: https://doi.org/10.1039/d3qi00455d

IF: 7.779

2023-01-01

Inorganic Chemistry Frontiers

Abstract:Anisotropic facet engineering is an intriguing way to regulate the charge-separation behavior on a semiconductor photocatalyst. Here we show the morphology tailoring of cuprous oxide (Cu2O) from cubic to octahedral and truncated octahedral crystals, and apply Kelvin probe force microscopy to image the photogenerated charge separation on exposed anisotropic facets. The facet junction was observed to greatly improve charge separation efficiency, wherein the photo-induced electrons and holes tend to accumulate on the {100} and {111} facets, respectively. We further correlate the facet-dependent photocorrosion of Cu2O in a photoelectrochemical process with the self-reduction from photo-induced electrons. Our results illuminate the crucial role of anisotropic facet engineering in the regulation of photogenerated charge behaviors and surface reactions in photocatalytic energy conversion.
Atomic-resolution Study of Charge Transfer Effects at the LaTiO3/LaFeO3 Interface

Chenyi Gu,Min Gu,Chunchen Zhang,Zhoushen Yuan,Zhengbin Gu,Jian Zhou,Yuefeng Nie,Peng Wang,Xiaoqing Pan

DOI: https://doi.org/10.1103/physrevb.104.085115

2021-01-01

Abstract:Charge transfer effect can give rise to exotic two-dimensional phenomena at not only polar-nonpolar interfaces but also isopolar interfaces in complex oxides. Here, we investigate the valence state changes of both Ti and Fe at the LaTiO3/LaFeO3 interface by a combination of density functional theory calculations, molecular beam epitaxy, and aberration-corrected scanning transmission electron microscopy. We demonstrate that the charge transfer from Ti to Fe occurs near the interface. The majority of the transferred charge is located within 1 unit cell from the interface. Our results present a detailed understanding of the interfacial charge transfer effect upon the design of functional oxide heterostructures.
Photogenerated carrier dynamics at the B4C3/g-C3N4 interface

Xianke Yue,Hong-Yao Liu,Yujun Zheng,Huan Yang

DOI: https://doi.org/10.1039/d2cp02175g

2022-10-19

Abstract:Developing van der Waals (vdW) heterostructures is an excellent approach for optimizing exceptional optoelectronic and photocatalytic properties of materials; therefore, researching the interface dynamics of charge carriers at the two-dimensional vdW heterojunction is of great significance. In this work, we perform time-dependent ab initio non-adiabatic molecular dynamics simulations to study the dynamics of charge transfer at the B4C3/g-C3N4 heterostructure. The simulations show that the charge transfer between B4C3/g-C3N4 layers is mainly caused by the non-adiabatic mechanism. The non-adiabatic mechanism leads to a higher charge-transfer efficiency and slows down the process of interlayer electron-hole recombination, thereby promoting the separation of photogenerated electron-hole pairs. Our investigation provides essential insights into understanding the dynamics of charge transfer for the B4C3/g-C3N4 heterostructure, which provides guidance for photocatalytic water splitting and optoelectrical applications.
Defects Controlled Doping and Electrical Transport in TiS2 Single Crystals

Ke Chen,Meng Song,Yi-Yang Sun,Hai Xu,Dong-Chen Qi,Zhenhuang Su,Xingyu Gao,Qian Xu,Jun Hu,Junfa Zhu,Ranran Zhang,Jie Wang,Lei Zhang,Liang Cao,Yuyan Han,Yimin Xiong

DOI: https://doi.org/10.1063/5.0005170

IF: 4

2020-01-01

Applied Physics Letters

Abstract:TiS2 has been intensively studied as an electrode material and a thermoelectric material for energy storage and conversion applications due to its high electrical conductivity. Understanding the influence of defects on electrical transport is of importance not only to resolve the long-standing question concerning the nature of TiS2, but also for the rational design of TiS2 based devices for energy scavenging applications. In this study, we integrate photoemission spectroscopy, Raman spectroscopy, and electrical transport measurements to determine the chemical compositions dominated by defects and their influence on the doping and electrical properties. Our results demonstrate that TiS2 is a heavily self-doped semiconductor with the Fermi level close to the conduction band, which serves as the conclusive experimental evidence regarding the semiconducting nature of TiS2. The doping effect is sensitive to the (subtle) changes in the chemical composition. The electron donation from the Ti interstitials (Tii) to the TiS2 host explains the high carrier concentration. The Ti Frenkel pair (TiF) acting as the acceptor is responsible for the decrease in the electron carrier concentration and electrical conductivity. High conductivity maintains upon partial oxidization, indicating the oxidization-tolerance in terms of the electronic structure. Our results provide valuable insight into the evolution of electronic properties modulated by defects that reveal unambiguously the self-doped semiconducting nature of TiS2 and chemical- and environment-tolerance of TiS2 as an advanced energy scavenging material.
Probing Charge Accumulation at SrMnO 3 /SrTiO 3 Heterointerfaces via Advanced Electron Microscopy and Spectroscopy

Hongguang Wang,Vesna Srot,Xijie Jiang,Min Yi,Yi Wang,Hans Boschker,Rotraut Merkle,Robert W. Stark,Jochen Mannhart,Peter A. van Aken

DOI: https://doi.org/10.1021/acsnano.0c01545

IF: 17.1

2020-09-10

ACS Nano

Abstract:The last three decades have seen a growing trend toward studying the interfacial phenomena in complex oxide heterostructures. Of particular concern is the charge distribution at interfaces, which is a crucial factor in controlling the interface transport behavior. However, the study of the charge distribution is very challenging due to its small length scale and the intricate structure and chemistry at interfaces. Furthermore, the underlying origin of the interfacial charge distribution has been rarely studied in-depth and is still poorly understood. Here, by a combination of aberration-corrected scanning transmission electron microscopy (STEM) and spectroscopy techniques, we identify the charge accumulation in the SrMnO3 (SMO) side of SrMnO3/SrTiO3 heterointerfaces and find that the charge density attains the maximum of 0.13 ± 0.07 e–/unit cell (uc) at the first SMO monolayer. Based on quantitative atomic-scale STEM analyses and first-principle calculations, we explore the origin of interfacial charge accumulation in terms of epitaxial strain-favored oxygen vacancies, cationic interdiffusion, interfacial charge transfer, and space-charge effects. This study, therefore, provides a comprehensive description of the charge distribution and related mechanisms at the SMO/STO heterointerfaces, which is beneficial for the functionality manipulation via charge engineering at interfaces.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c01545?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c01545</a>.More details about the surface morphology of the SMO thin film, low-magnification STEM imaging of the specimen cross-section, HAADF and ABF image simulation at the heterointerface, spectra of the Ti-L2,3 edge close to the interface, strain analysis at the interface, thickness mapping by low loss spectra, first-principle calculations of the formation energy of oxygen vacancies, and the calculated density of states of the Sr(Mn, Ti)O3 supercells (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c01545/suppl_file/nn0c01545_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Atomic-resolution study of charge transfer effects at the LaTi O 3 / LaFe O 3 interface

Chenyi Gu,Min Gu,Chunchen Zhang,Zhoushen Yuan,Zhengbin Gu,Jian Zhou,Yuefeng Nie,Peng Wang,Xiaoqing Pan

DOI: https://doi.org/10.1103/physrevb.104.085115

IF: 3.7

2021-08-10

Physical Review B

Abstract:Charge transfer effect can give rise to exotic two-dimensional phenomena at not only polar-nonpolar interfaces but also isopolar interfaces in complex oxides. Here, we investigate the valence state changes of both Ti and Fe at the LaTiO3/LaFeO3 interface by a combination of density functional theory calculations, molecular beam epitaxy, and aberration-corrected scanning transmission electron microscopy. We demonstrate that the charge transfer from Ti to Fe occurs near the interface. The majority of the transferred charge is located within 1 unit cell from the interface. Our results present a detailed understanding of the interfacial charge transfer effect upon the design of functional oxide heterostructures.

physics, condensed matter, applied,materials science, multidisciplinary
“X-Scheme” Charge Separation Induced by Asymmetrical Localized Electronic Band Structures at the Ceria Oxide Facet Junction

Fei Rao,Yurong An,Xiaoyang Huang,Lujun Zhu,Siwen Gong,Xianjin Shi,Jiangbo Lu,Jianzhi Gao,Yu Huang,Qizhao Wang,Peng Liu,Gangqiang Zhu

DOI: https://doi.org/10.1021/acscatal.2c04954

IF: 12.9

2023-02-03

ACS Catalysis

Abstract:Photogenerated charge transfer can be tuned by crystal face controlling and heterostructure engineering. However, it is exceptionally challenging to understand the separation and transfer process of charge carriers, especially on the facet junction. Here, we show a separation pathway of the charge carriers in (111)/(100)CeO2–x nanomaterials as the “X-Scheme junction” using selected region electron energy-loss spectroscopies. The driving force for the “X-Scheme junction” can be attributed to the localized electronic band structures’ asymmetry of the ceria, which gathers the photogenerated electrons on the surface of the (111) plane and accumulates the photogenerated holes on the (100) face. Surface oxygen vacancies channel the photogenerated electrons and holes further to the Ce3+ of the (111) plane and the Ce4+ of the (100) plane, respectively, resulting in an enhanced photo-oxidative nitric oxide removal efficiency under visible-light irradiation. Furthermore, the system is found to integrate metal nanoparticles to form Pd–CeO2–x , including Pd-(111)CeO2–x and Pd-(100)CeO2–x , which significantly restricts nitric dioxide production as a byproduct. This work provides a unique approach to understanding single-crystal photocatalysts based on the facet junction.

chemistry, physical
Improving Charge Transfer under Strong Coupling Conditions via Interfacial Modulation

En Cao,Xu Shi,Tomoya Oshikiri,Yen-En Liu,Quan Sun,Keiji Sasaki,Hiroaki Misawa

DOI: https://doi.org/10.1021/acsphotonics.3c01733

IF: 7

2024-02-28

ACS Photonics

Abstract:Plasmon-induced carrier transfer at metal/semiconductor Schottky junctions is a novel approach for photo energy conversion. Here, we propose a strategy for improving electron transfer at the Au/TiO2 heterojunction by modifying the Au/TiO2 structures under modal strong coupling conditions to demonstrate the efficacy of our proposal. Via transient absorption measurements, we found that the apparent quantum efficiency (AQE) of electron injection into TiO2 increased by ∼1.8-fold as the thickness of the Ti layer increased from 0.5 to 5.0 nm under the modal strong coupling conditions. This AQE enhancement was attributed to the energy transfer from AuNDs to the Ti layer through the near-field, resulting in a production of high-energy electrons in the Ti layer to inject into the conduction band of TiO2, thereby improving the electron transfer efficiency. Our observations offer valuable insight into the future design of plasmonic devices aimed at efficiently utilizing plasmon-induced hot carriers.

physics, condensed matter,optics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
Characterization of Type I/II g-C 3 N 4 /MoS 2 van der Waals Heterostructures: A New Theoretical Insight

Xin Wang,Jing Ma,Jianhua Fan,Hui Zhu,Xingman Liu,Hongqiang Xia,Yingtao Liu

DOI: https://doi.org/10.1021/acs.jcim.3c01089

IF: 6.162

2023-08-03

Journal of Chemical Information and Modeling

Abstract:The charge transfer mechanism of the g-C3N4/MoS2 heterojunction is still disputed. Some regard it as a type I pathway, some regard it as a type II pathway, and still some regard it as a Z-scheme pathway. Especially, the results obtained by density functional theory (DFT) calculations are not totally in agreement. Here, we constructed four g-C3N4/MoS2 heterojunctions on the basis of the aperture alignment modes of g-C3N4 and MoS2. Their morphology and photocatalytic activity were investigated via first-principles and excited state dynamics simulations. By systemically comparing the interfacial binding energy and electronic structure (e.g., band structure, electrostatic potential, and band edge positions) of g-C3N4/MoS2 heterojunctions, we found that both type I and type II band alignment structures could be obtained. Moreover, the calculated lifetimes of interlayer photogenerated electrons and holes show that type II g-C3N4/MoS2 tends to favor a general type II pathway rather than a Z-scheme pathway. This study could provide a deep understanding of the photocatalytic mechanism of g-C3N4/MoS2 van der Waals heterostructures, which will be of great use for applications in photocatalysis.

chemistry, multidisciplinary, medicinal,computer science, interdisciplinary applications, information systems
Quantitative Spectroscopic Analysis of Surface-Reaching Photoexcited Holes in g-C3N4/TiO2 Z-Scheme Heterojunctions

Cong Fu,Lingfang Liu,Yu Wang,Yaxiong Wei,Weixin Huang,Guofeng Zhao

DOI: https://doi.org/10.1021/acsami.4c14255

2024-10-23

Abstract:The Z-scheme heterojunction has been demonstrated to be effective in tuning the photocatalytic performance of photocatalysts. However, there is still a lack of quantitative and in-depth research on how the Z-scheme heterojunction affects the concentration of surface-reaching photoexcited charges. Here, by combining time-resolved spectroscopies and kinetic analysis, the concentration of surface-reaching photoholes (Ch+(surf)) within g-C3N4/TiO2 Z-scheme heterojunctions was quantitatively analyzed for the first time. Quantitative measurements reveal that Ch+(surf) of the prepared Z-scheme photocatalysts is highly dependent on the g-C3N4 content and the induced Z-scheme heterojunctions at the g-C3N4/TiO2 interface. Encouragingly, we found that a properly engineered Z-scheme heterojunction with close coupling of g-C3N4 and TiO2 can significantly increase the Ch+(surf), leading to nearly a 1.7-fold increase compared with pristine TiO2 samples. Furthermore, a distinct hole trap state-mediated Z-scheme charge transfer mechanism was uncovered in which the intrinsic interface defects at the g-C3N4/TiO2 junction act as hole traps, accelerating interface electron-hole recombination, thereby boosting spatial charge separation and ultimately enriching the Ch+(surf). This work provides insights into understanding and controlling electron pathways and Ch+(surf) in Z-scheme photocatalysis, with implications for the screening of different types of direct Z-scheme photocatalysts.
Facet-Dependent Interfacial Charge Transfer in TiO2/Nitrogen-Doped Graphene Quantum Dots Heterojunctions for Visible-Light Driven Photocatalysis

Nan-Quan Ou,Hui-Jun Li,Bo-Wen Lyu,Bo-Jie Gui,Xiong Sun,Dong-Jin Qian,Yanlin Jia,Xianying Wang,Junhe Yang

DOI: https://doi.org/10.3390/catal9040345

IF: 3.9

2019-01-01

Catalysts

Abstract:Interfacial charge transfer is crucial in the efficient conversion of solar energy into fuels and electricity. In this paper, heterojunction composites were fabricated, comprised of anatase TiO2 with different percentages of exposed {101} and {001} facets and nitrogen-doped quantum dots (NGQDs) to enhance the transfer efficiency of photo-excited charge carriers. The photocatalytic performances of all samples were evaluated for RhB degradation under visible light irradiation, and the hybrid containing TiO2 with 56% {001} facets demonstrated the best photocatalytic activity. The excellent photoactivity of TiO2/NGQDs was owed to the synergistic effects of the following factors: (i) The unique chemical features of NGQDs endowed NGQDs with high electronic conductivities and provided its direct contact with the TiO2 surface via forming Ti–O–C chemical bonds. (ii) The co-exposed {101} and {001} facets were beneficial for the separation and transfer of charge carriers in anatase TiO2. (iii) The donor-acceptor interaction between NGQDs and electron-rich {101} facets of TiO2 could remarkably enhance the photocurrent, thus hindering the charge carriers recombination rate. Extensive characterization of their physiochemical properties further showed the synergistic effect of facet-manipulated electron-hole separation in TiO2 and donor-acceptor interaction in graphene quantum dots (GQDs)/TiO2 on photocatalytic activity.
Interfacial TiN bonding of a g-C 3 N 4 /TiH 1.92 type-II heterojunction photocatalyst significantly enhanced photocatalytic hydrogen evolution from water splitting

Warisha Tahir,Tuck-Yun Cheang,Jing-Han Li,Cong Ling,Xiao-Jie Lu,Ikram Ullah,Gang Wang,An-Wu Xu

DOI: https://doi.org/10.1039/d1cy02039k

2022-01-01

Abstract:An efficient interfacial TiN interaction of g-C 3 N 4 /TiH 1.92 type-II heterojunctions photocatalyst facilitates an enhanced photocatalytic hydrogen evolution from water splitting with improved photoinduced electron-hole pairs separation and transport ability.

chemistry, physical

New insights into interfacial photocharge transfer in TiO<sub>2</sub>/C<sub>3</sub>N<sub>4</sub> heterostructures: effects of facets and defects

New insights into interfacial photocharge transfer in TiO2/C3N4 heterostructures: effects of facets and defects

Tunable Two-Dimensional Interfacial Coupling in Molecular Heterostructures

The origin of enhanced photocatalytic activity in g-C3N4/TiO2 heterostructure revealed by DFT calculations

Interfacial Charge Transfer in MoS2/TiO2 Heterostructured Photocatalysts: The Impact of Crystal Facets and Defects

Interfacial charge transfer and interaction in the MXene/TiO2 heterostructures

A new understanding of the photocatalytic mechanism of the direct Z-scheme g-C3N4/TiO2 heterostructure.

New Insights into Defect‐Mediated Heterostructures for Photoelectrochemical Water Splitting

Theoretical Study on Transport-Scheme Conversion of G-C3n4/tio2 Heterojunctions by Oxygen Vacancies

Spatial Separation of Photogenerated Charges on the Anisotropic Facets of Cuprous Oxide

Atomic-resolution Study of Charge Transfer Effects at the LaTiO3/LaFeO3 Interface

Photogenerated carrier dynamics at the B4C3/g-C3N4 interface

Defects Controlled Doping and Electrical Transport in TiS2 Single Crystals

Probing Charge Accumulation at SrMnO 3 /SrTiO 3 Heterointerfaces via Advanced Electron Microscopy and Spectroscopy

Atomic-resolution study of charge transfer effects at the LaTi O 3 / LaFe O 3 interface

“X-Scheme” Charge Separation Induced by Asymmetrical Localized Electronic Band Structures at the Ceria Oxide Facet Junction

Improving Charge Transfer under Strong Coupling Conditions via Interfacial Modulation

Characterization of Type I/II g-C 3 N 4 /MoS 2 van der Waals Heterostructures: A New Theoretical Insight

Quantitative Spectroscopic Analysis of Surface-Reaching Photoexcited Holes in g-C3N4/TiO2 Z-Scheme Heterojunctions

Facet-Dependent Interfacial Charge Transfer in TiO2/Nitrogen-Doped Graphene Quantum Dots Heterojunctions for Visible-Light Driven Photocatalysis

Interfacial TiN bonding of a g-C 3 N 4 /TiH 1.92 type-II heterojunction photocatalyst significantly enhanced photocatalytic hydrogen evolution from water splitting