Remarkably high thermoelectric performance of Cu2−xLixSe bulks with nanopores

Qiujun Hu,Zheng Zhu,Yuewen Zhang,Xin-Jian Li,Hongzhang Song,Yingjiu Zhang

DOI: https://doi.org/10.1039/c8ta06912c

IF: 11.9

2018-01-01

Journal of Materials Chemistry A

Abstract:Cu2Se is a p-type semiconducting compound that possesses excellent thermoelectric properties which exhibit great potential for practical applications.

What problem does this paper attempt to address?

Remarkably high thermoelectric performance of Cu2-xLixSe bulks with nanopores

Qiujun Hu,Zheng Zhu,Yuewen Zhang,Xinjian Li,Hongzhang Song,Yingjiu Zhang

DOI: https://doi.org/10.1039/c8ta06912c

IF: 11.9

2018-01-01

Journal of Materials Chemistry A

Abstract:Cu2Se is a p-type semiconducting compound that possesses excellent thermoelectric properties which exhibit great potential for practical applications. In recent years, there have been many ways to improve thermoelectric properties. Reducing the thermal conductivity is a very effective way to obtain high performance thermoelectric materials. In this study, a series of Cu2-xLixSe (x = 0, 0.01, 0.02 and 0.03) polycrystalline bulk samples were successfully prepared by hot-pressing the nanopowders made by hydrothermal synthesis to investigate the doping effects of Li on the phase structure, microstructure and thermoelectric properties of Cu2Se. Compared with the Li-free Cu2Se, the introduction of Li element increases the Seebeck coefficient. Importantly, both nanopores and Li substitution were observed which can reduce (L)via increased scattering phonons. At 973 K, the Cu1.98Li0.02Se sample presented an excellent ZT of 2.14.
Thermoelectric Properties of Strained -Cu2Se

Wei Cao,Ziyu Wang,Ling Miao,Jing Shi,Rui Xiong

DOI: https://doi.org/10.1021/acsami.1c08686

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:In recent years, the high-temperature phase of Cu2Se, namely, beta-Cu2Se, has attracted increasing attention due to its outstanding thermoelectric efficiency. The Cu ions in beta-Cu2Se show a distinct ion-liquid behavior between the framework of a Se ion lattice. Many experimental operations may lead to a discrepancy in the lattice structure. Experimentally synthesized beta-Cu2Se was p-type, and a thermoelectric device needs both p-type and n-type materials with a close figure of merit. Studying the effect of strain and the possibility of n-type beta-Cu2Se is essential. Utilizing first-principles calculations and molecular dynamics simulations, we investigate the thermoelectric performance of strained beta-Cu2Se. The results show that the n-type beta-Cu2Se can exhibit superior zT values like the p-type one. Applying compressive strain is an effective way to promote the power factor. The tensile strain will lead to a low lattice thermal conductivity and thus boost the p-type zT values. The predicted maximum zT values for n-type and p-type beta-Cu2Se can reach 1.65 and 1.71 at 800 K, respectively. Considering the fact that applying strain is challenging in experiments, we propose a feasible strategy to manipulate the lattice structure and carrier type: doping halogen elements. Our results provide a guide for Cu2Se-based thermoelectric devices.
High thermoelectric performance and low thermal conductivity in Cu 2- x Na x Se bulk materials with micro-pores

Zheng Zhu,Yuewen Zhang,Hongzhang Song,Xin-Jian Li

DOI: https://doi.org/10.1007/s00339-019-2870-8

2019-01-01

Applied Physics A

Abstract:Cu 2 Se has been considered as a promising thermoelectric material due to its unique structure and excellent performance. Herein, a series of Cu 2- x Na x Se ( x = 0, 0.01, 0.02, 0.03, and 0.04) polycrystalline samples were synthesized by combining hydrothermal synthesis and hot pressing to investigate the effects of Na-doping on the microstructure and thermoelectric properties of Cu 2 Se. Compared with the pristine Cu 2 Se, the Na-doping introduces numerous micro-pores that can optimize the thermal transport performance by strong phonon scattering effects of interfaces between the micro-pores and grains. The doped samples have excellent electrical properties and low thermal conductivity. The maximum value of ZT = 2.1 is obtained at 973 K for the Cu 1.96 Na 0.04 Se sample with nominal composition. The results confirm that introducing Na into Cu 2 Se is an effective and convenient strategy to improve the thermoelectric performance of the Cu 2 Se alloy by decreasing the lattice thermal conductivity.
Facile Synthesis of Monodisperse Cu3SbSe4 Nanoparticles and Thermoelectric Performance of Cu3SbSe4 Nanoparticle-Based Materials

Yimin Wu,Xvsheng Qiao,Xianping Fan,Xianghua Zhang,Shuo Cui,Jun Wan

DOI: https://doi.org/10.1007/s11051-015-3094-2

IF: 2.533

2015-01-01

Journal of Nanoparticle Research

Abstract:In this study, large-scale synthesis of Cu3SbSe4 and Cu3Sb0.98Sn0.02Se4 nanoparticles with a narrow size distribution was achieved through a rapid-injection route. These nanoparticles showed a monodisperse and quasi-spherical morphology. The Cu3SbSe4 and Cu3Sb0.98Sn0.02Se4 nanoparticle-based bulk materials were then prepared by hot-pressed sinter of the nanoparticles, and their thermoelectric performances were systematically studied. Due to the reduced lattice thermal conductivity from enhanced phonon scattering at the grain interfaces of the bulk materials, the maximum ZT value of the Cu3Sb0.98Sn0.02Se4 bulk materials reached 0.50 at 575 K.
Enhanced Stability and Thermoelectric Performance in Cu 1.85 Se-Based Compounds

Jing Jiang,Chengcheng Yang,Yi Niu,Jie Song,Chao Wang

DOI: https://doi.org/10.1021/acsami.1c08886

2021-07-30

Abstract:Liquid-like copper selenium compounds have attracted considerable interest in recent years for their excellent thermoelectric performance, abundant element reserves, and low toxicity. However, the related applications are still limited due to the phase transition and precipitation of Cu under an external field. Here, the cubic Cu1.85Se-based compounds with suppressed phase transition and improved critical voltage (Vc) are first studied. In particular, Li/Bi co-doping effectively optimizes hole concentration and the ZTs are substantially improved from 0.2 in Cu1.85Se to 0.7 in Li0.03Cu1.81Bi0.04Se at 760 K. Meanwhile, the latter shows an outstanding Vc above 0.22 V at 750 K, which is the highest value in Cu2–xSe thermoelectric compounds to date. Moreover, S is alloyed in Li0.03Cu1.81Bi0.04Se to greatly reduce the thermal conductivity and the ZT is further enhanced to 0.9 for Li0.03Cu1.81Bi0.04Se0.9S0.1 at 760 K. Our work sheds light on a new strategy to realize good stability and enhanced thermoelectric performance, which provides a new direction for further research.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c08886.Temperature dependence of the thermoelectric properties of Cu1.8+xSe (x = 0, 0.03, 0.05, 0.06); XRD patterns of Cu1.8+xSe (x = 0, 0.03, 0.05, 0.06); XRD pattern of Li0.04Cu1.81Bi0.04Se and thermoelectric properties of LixCu1.85Se (x = 0, 0.01, 0.02, 0.03, 0.04); XPS spectra of Li0.03Cu1.81Bi0.04Se; high-temperature XRD patterns of Cu1.85Se and Li0.03Cu1.85Se; TGA analysis of Cu1.85Se and Li0.03Cu1.85Se; temperature dependence of Cu1.85–xSnxSe (x = 0, 0.01, 0.02, 0.03); temperature-dependent thermoelectric properties of Cu1.85–xBixSe (x = 0, 0.01, 0.02, 0.03, 0.04); temperature dependence of electrical thermal conductivity of LixCu1.85–xSe (x = 0, 0.01, 0.02, 0.03) and Li0.03Cu1.85–yBiySe (y = 0.02, 0.03, 0.04, 0.05); detailed calculation process of lattice thermal conductivity; high stability and reproducibility of the thermoelectric properties of Li0.03Cu1.81Bi0.04Se; temperature dependence of the thermoelectric properties of Li0.03Cu1.81Bi0.04Se1–zSz (z = 0, 0.05, 0.1, 0.2, 0.3); and temperature dependence of the electrical thermal conductivity for Cu1.85Se, Li0.03Cu1.85Se and Li0.03Cu1.81Bi0.04Se1–zSz (z = 0, 0.05, 0.1, 0.2, 0.3) (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Ultralow Thermal Conductivity and High ZT of Cu2Se-based Thermoelectric Materials Mediated by TiO2−n Nanoclusters

Jincheng Yu,Xiaodong Liu,Haihua Hu,Yilin Jiang,Hua-Lu Zhuang,Hezhang Li,Bin Su,Jing-Wei Li,Zhanran Han,Zhengqin Wang,Lu Chen,Kei Hayashi,Yuzuru Miyazaki,B. Layla Mehdi,Jing-Feng Li

DOI: https://doi.org/10.1016/j.joule.2024.06.007

IF: 46.048

2024-01-01

Joule

Abstract:Cu2Se is a promising p-type thermoelectric material for energy harvesting due to its intrinsically low thermal conductivity arising from the liquid-like Cu ions, leaving very limited room for regulation of phonon propagation. Herein, the thermal conductivity of superionic Cu2Se is efficiently mediated by titanium oxide nanoclusters, leading to an exceptionally high thermoelectric figure of merit (ZT) at high temperatures. By controlling the oxygen deficiency, the sophisticated TiO2-n architectures can be constructed with optimized phase composition and electrical properties. The presence of p-n junctions helps to reduce carrier concentration without degrading mobility, and the complex heterogeneous interfaces generated by TiO2-n nanoclusters give rise to huge interfacial thermal resistance. Benefiting from the suppressed electrical transport and enhanced phonon scattering, the total thermal conductivity shows a reduction of at least 36%, contributing to a high ZT value of 2.8 at 973 K. This work demonstrates a paradigm of modulating thermal transport through the self-assembly design.
Thermoelectric Properties of Cu2Se Nano-Thin Film by Magnetron Sputtering

Liangliang Yang,Jiangtao Wei,Yuanhao Qin,Lei Wei,Peishuai Song,Mingliang Zhang,Fuhua Yang,Xiaodong Wang

DOI: https://doi.org/10.3390/ma14082075

IF: 3.4

2021-04-20

Materials

Abstract:Thermoelectric technology can achieve mutual conversion between thermoelectricity and has the unique advantages of quiet operation, zero emissions and long life, all of which can help overcome the energy crisis. However, the large-scale application of thermoelectric technology is limited by its lower thermoelectric performance factor (ZT). The thermoelectric performance factor is a function of the Seebeck coefficient, electrical conductivity, thermal conductivity and absolute temperature. Since these parameters are interdependent, increasing the ZT value has always been a challenge. Here, we report the growth of Cu2Se thin films with a thickness of around 100 nm by magnetron sputtering. XRD and TEM analysis shows that the film is low-temperature α-Cu2Se, XPS analysis shows that about 10% of the film’s surface is oxidized, and the ratio of copper to selenium is 2.26:1. In the range of 300–400 K, the maximum conductivity of the film is 4.55 × 105 S m−1, which is the maximum value reached by the current Cu2Se film. The corresponding Seebeck coefficient is between 15 and 30 μV K−1, and the maximum ZT value is 0.073. This work systematically studies the characterization of thin films and the measurement of thermoelectric properties and lays the foundation for further research on nano-thin-film thermoelectrics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
In-situ formed nano-pore induced by Ultrasonication boosts the thermoelectric performance of Cu2Se compounds

Jian Zhang,Ting Zhu,Cheng Zhang,Yonggao Yan,Gangjian Tan,Wei Liu,Xianli Su,Xinfeng Tang

DOI: https://doi.org/10.1016/j.jallcom.2021.160639

IF: 6.2

2021-11-01

Journal of Alloys and Compounds

Abstract:Herein, we reported an enhanced ZT value of 1.71 is achieved via in-situ formed nano-pore. The nano-pore is mainly in-situ formed by a combination method with self-propagating high temperature synthesis, ultrasonic treatment and spark plasma sintering. The highly non-equilibrium feature of combustion synthesis leads to the large residual stress in the grains. Due to the presence of residual stress in the grains, the ultrasonic treatment breaks the grains into the structure with sub-nanometer scale and high surface energy, which tends to enclose and to from in-situ pores during the fast sintering process. The liquid-like Cu+ and the in-situ formed nano-pore intensifies the phonon scattering, suppressing the thermal conductivity to 0.40~0.45 Wm-1K-1 at 873 K for pore-incorporated samples. In comparison with the melting synthesized sample, a remarkable enhancement of ZT value over 16% at 873 K is achieved. In the temperature interval of 473 K to 873 K, the averaged ZT value for Cu2Se with in-situ formed nano-pores reaches 1.10, improved by 32.5% when compared to that of the melting synthesized sample. This work demonstrates that the combination of self-propagating high temperature synthesis, ultrasonic treatment and spark plasma sintering is an effective way to synthesize the samples with in-situ nano-pores and paves a new avenue for improving the thermoelectric performance of the Cu2Se materials.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Remarkable Enhancement in Thermoelectric Performance of BiCuSeO by Cu Deficiencies.

Yong Liu,Li-Dong Zhao,Yaochun Liu,Jinle Lan,Wei Xu,Fu Li,Bo-Ping Zhang,David Berardan,Nita Dragoe,Yuan-Hua Lin,Ce-Wen Nan,Jing-Feng Li,Hongmin Zhu

DOI: https://doi.org/10.1021/ja2091195

IF: 15

2011-01-01

Journal of the American Chemical Society

Abstract:A significant enhancement of thermoelectric performance in layered oxyselenides BiCuSeO was achieved. The electrical conductivity and Seebeck coefficient of BiCu(1-x)SeO (x = 0-0.1) indicate that the carriers were introduced in the (Cu(2)Se(2))(2-) layer by Cu deficiencies. The maximum of electrical conductivity is 3 × 10(3) S m(-1) for Bicu(0.975)Seo at 650 °C, much larger than 470 S m(-1) for pristine BiCuSeO. Featured with very low thermal conductivity (∼0.5 W m(-1) K(-1)) and a large Seebeck coefficient (+273 μV K(-1)), ZT at 650 °C is significantly increased from 0.50 for pristine BiCuSeO to 0.81 for BiCu(0.975)SeO by introducing Cu deficiencies, which makes it a promising candidate for medium temperature thermoelectric applications.
High thermoelectric performance of Cu3SbSe4 nanocrystals with Cu2-xSe in situ inclusions synthesized by a microwave-assisted solvothermal method

Dandan Xie,Bin Zhang,Aijuan Zhang,Yongjin Chen,Yanci Yan,Hengquan Yang,Guiwen Wang,Guoyu Wang,Xiaodong Han,Guang Han,Xu Lu,Xiaoyuan Zhou

DOI: https://doi.org/10.1039/c8nr03550d

IF: 6.7

2018-08-02

Nanoscale

Abstract:(Ag,Sn) co-doped Cu3SbSe4 nanocrystals are obtained via a facile microwave-assisted solvothermal method, and their thermoelectric properties are investigated in the temperature range from 300 K to 623 K. Sn-doping on Sb sites dramatically increases the carrier concentration and thus the electrical conductivity, promoting the thermoelectric power factor. Further alloying with Ag on Cu sites strongly suppresses the lattice thermal conductivity close to the glass limit. Aside from point defect scattering, such reduction in lattice thermal conductivity largely relies on the formation of Cu2-xSe nanoinclusions, which serve as additional scattering centers for phonons. Overall, the sample with the nominal composition of Cu2.8Ag0.2Sb0.95Sn0.05Se4 reaches a minimum lattice thermal conductivity of 0.27 W m-1 K-1 and a maximum zT of 1.18 at 623 K, which is the best result for the Cu3SbSe4-based materials in the same temperature region. Our results demonstrate that the microwave-assisted synthesis method is capable of fabricating Cu based ternary compounds with high thermoelectric performance.
Thermoelectric performance enhancement of eco-friendly Cu 2 Se through incorporating CB 4

Wen Xie,Feng Liu,Yingxiang Zheng,Nina Ge,Bo Dai,Xiaowei Zhang

DOI: https://doi.org/10.1039/d2ra01546c

IF: 4.036

2022-01-01

RSC Advances

Abstract:Thermoelectric performance enhancement in a liquid-like material Cu 2 Se by introducing CB 4 nanopowders based on the hydrothermal method and hot-pressing technique.

chemistry, multidisciplinary
First-principles investigation on the thermoelectric performance of half-Heusler compound CuLiX(X = Se, Te)

Kang Jia,Chuan-Lu Yang,Mei-Shan Wang,Xiao-Guang Ma,You-Gen Yi

DOI: https://doi.org/10.1088/1361-648X/abcbdc

2021-03-03

Abstract:The remarkable thermoelectric performance is predicted for half-Heusler (HH) compounds of CuLiX (X = Se, Te) based on the first-principles calculation, the deformation potential (DP) theory, and semi-classical Boltzmann theory. The Slack model is employed to evaluate the lattice thermal conductivity and the result is in good agreement with the previously reported data. The results of mechanical properties demonstrate that CuLiSe is ductile but CuLiTe is brittle. The relaxation time and the carrier mobility are calculated with DP theory. The electrical and thermal conductivities are obtained by using the semi-classical Boltzmann theory based on the relaxation approximation. The Seebeck coefficient and power factor are obtained and their characters are analyzed. The dimensionless figure of merits (ZT) is obtained for the p- and n-type CuLiX. The maximum ZT of 2.65 can be achieved for n-type CuLiTe at the carrier concentration of 3.19 × 1019 cm-3 and 900 K, which indicates that this compound is a very promising candidate for the highly efficient thermoelectric materials.
Enhanced thermoelectric performance of CuGaTe2 based composites incorporated with nanophase Cu2Se

Jian Zhang,Xiaoying Qin,Di Li,Hongxing Xin,Chunjun Song,Liangliang Li,Xiaoguang Zhu,Zhaoming Wang,Guanglei Guo,Ling Wang

DOI: https://doi.org/10.1039/c3ta15211a

IF: 11.9

2014-01-01

Journal of Materials Chemistry A

Abstract:We investigate the thermoelectric properties of CuGaTe2/xCu(2)Se composites in a moderate temperature range. The results indicate that the introduction of Cu2Se remarkably lowers the thermal conductivity of the composite system. Especially, the thermal conductivity of CuGaTe2/3 vol% Cu2Se decreases to 0.54 W m(-1) K-1 at 859 K, which allows its ZT to reach 1.2 at 834 K.
Ultralow Thermal Conductivity and Extraordinary Thermoelectric Performance Realized in Codoped Cu3SbSe4 by Plasma Spark Sintering

D Li,H W Ming,J M Li,B Jabar,W Xu,J Zhang,X Y Qin

DOI: https://doi.org/10.1021/acsami.9b20103

2020-01-22

Abstract:Cu3SbSe4-based materials have attracted much attention for thermoelectric power generation in the mid-temperature range due to their low cost, ecofriendliness, and abundant elements on the earth. However, the peak figure of merit (ZT) for the Cu3SbSe4-based system prepared by the fusion method is usually smaller than unity because of its high thermal conductivity. Here, we show that through a coprecipitation method combined with spark plasma sintering ultrafine-grained Cu3Sb0.94Sn0.06Se4-ySy (y = 0, 0.5) embedded with Cu3SbSe3 nanoprecipitates can be prepared. Due to the ultralow thermal conductivity and enhanced Seebeck coefficient, a record-high ZT value of 1.32 is achieved for the sample Cu3Sb0.94Sn0.06Se3.5Se0.5. The ultralow thermal conductivity is attributed to the enhanced phonon scattering caused by the nanoprecipitates and fine grains of the samples, and the improved Seebeck coefficient originates from the enhancement of electronic density-of-state effective mass. Present results demonstrate that excellent thermoelectric performance can be realized in dual-substituted and fine-grained Cu3Sb0.94Sn0.06Se4-ySy with nanoprecipitates.
Interface‐Enhanced High‐Temperature Thermoelectricity in Cu1.99Se/B4C Composites with Synergistically Improved Mechanical Strength

Jincheng Yu,Haihua Hu,Yilin Jiang,Hua‐Lu Zhuang,Hao‐Cheng Thong,Bin Su,Jing‐Wei Li,Zhanran Han,Hezhang Li,Jun Pei,Jing‐Feng Li

DOI: https://doi.org/10.1002/aenm.202303942

IF: 27.8

2024-01-23

Advanced Energy Materials

Abstract:A facile interface engineering strategy is proposed to boost the thermoelectric figure of merit (ZT) of copper selenide by incorporation of B4C nanoparticles. The presence of B4C nanoparticles and complex interfaces gives rise to pronounced interfacial trapping effects and nano‐dispersion effects, leading to synergistical enhancement in both the high‐temperature thermoelectric performance and mechanical properties. Degenerate semiconductors usually demonstrate a metallic‐like conduction behavior, showing limited carrier mobility at high temperatures. Herein, by incorporating B4C nanoparticles into the Cu1.99Se system, an unusual switch from the "degenerate" to "non‐degenerate" semiconducting behavior is revealed as a result of the engineered interfaces. Heterogeneous interfaces and disordered Cu2Se amorphous phases are introduced in the Cu1.99Se/B4C composites, which generate a trapping effect against the mobile Cu ions, leading to a distinctive "hump" signature for electrical conductivity. Benefiting from this rare high‐temperature thermoelectric response, a high power factor is obtained due to reduced carrier concentration and enhanced mobility, and low lattice thermal conductivity is retained because of relatively stronger anharmonic lattice vibrations. Consequently, the Cu1.99Se + 0.9 vol.% B4C sample at least achieves a maximum thermoelectric figure of merit (ZT) of 2.6 at 1025 K with synergistically enhanced mechanical robustness. The present interface engineering strategy may be applicable to other thermoelectric materials with ionic migration characteristics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels
Thermoelectric Performance of Surface-Engineered Cu 1.5- x Te-Cu 2 Se Nanocomposites

Congcong Xing,Yu Zhang,Ke Xiao,Xu Han,Yu Liu,Bingfei Nan,Maria Garcia Ramon,Khak Ho Lim,Junshan Li,Jordi Arbiol,Bed Poudel,Amin Nozariasbmarz,Wenjie Li,Andreu Cabot,Maria Ibáñez

DOI: https://doi.org/10.1021/acsnano.3c00495

IF: 17.1

2023-04-19

ACS Nano

Abstract:Cu(2-x)S and Cu(2-x)Se have recently been reported as promising thermoelectric (TE) materials for medium-temperature applications. In contrast, Cu(2-x)Te, another member of the copper chalcogenide family, typically exhibits low Seebeck coefficients that limit its potential to achieve a superior thermoelectric figure of merit, zT, particularly in the low-temperature range where this material could be effective. To address this, we investigated the TE performance of Cu(1.5-x)Te-Cu(2)Se...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Defect Chemistry Engineering Promotes the Dopability of Cu for an Extraordinary Thermoelectric Performance of Hole-Doped PbSe with Resonant States

Jinchang Sun,Chenghao Xie,Wenjun Cui,Fan Yan,Jun Li,Jiaxu Zhang,Xiahan Sang,Xinfeng Tang,Gangjian Tan

DOI: https://doi.org/10.1021/acs.chemmater.3c00464

IF: 10.508

2023-05-29

Chemistry of Materials

Abstract:Cu substitution for Pb (CuPb) has been theoretically predicted to introduce resonant states near the valence band edge of PbSe. However, experimentally, it has not been verified yet due to the extremely low solubility (∼0.3 atom %) of CuPb. In this study, we demonstrate that the solubility limit of CuPb is extended to at least 1.5 atom % in PbSe by pairing with an identical amount of Cu interstitials (Cui), while excess Cu precipitates out as a Cu2Se phase at grain boundaries. As a result of the increased dopability of CuPb, a significant enhancement of the Seebeck coefficient is realized in hole-doped PbSe because of CuPb-induced resonant states. This is also testified by first-principles calculations. Moreover, the rich point defects (CuPb, Cui), line defects (dislocations), and Cu2Se precipitates remarkably frustrate the phonon propagation of PbSe, leading to ∼45% reduction of lattice thermal conductivity (κ lat) at room temperature. At elevated temperatures (>623 K), there is a dynamic migration of Cu atoms from Cu2Se precipitates to tetrahedral interstices of the PbSe matrix as evidenced by the temperature-variant Hall study and thermal expansion coefficient measurement. This diffusion-like process of Cu further drops the κ lat to ∼0.27 W m–1 K–1 at 823 K. Consequently, a peak ZT of ∼1.8 at 873 K is achieved in the (Cui)0.01Pb0.97(CuPb)0.01Na0.02Se sample. This work highlights the potential of the defect structure design in innovating new functional materials, particularly high-performance thermoelectrics.

materials science, multidisciplinary,chemistry, physical
Realizing Enhanced Thermoelectric Performance and Hardness in Icosahedral Cu 5 FeS 4− x Se x with High‐Density Twin Boundaries

Huan Wang,Sikang Zheng,Hong Wu,Xin Xiong,Qihong Xiong,Hengyang Wang,Yang Wang,Bin Zhang,Xu Lu,Guang Han,Guoyu Wang,Xiaoyuan Zhou

DOI: https://doi.org/10.1002/smll.202104592

IF: 13.3

2021-11-05

Small

Abstract:Bornite (Cu5 FeS4 ) is an Earth-abundant, nontoxic thermoelectric material. Herein, twin engineering and Se alloying are combined in order to further improve its thermoelectric performance. Cu5 FeS4-x Sex (0 ≤ x ≤ 0.4) icosahedral nanoparticles, containing high-density twin boundaries, have been synthesized by a colloidal method. Spark plasma sintering retains twin boundaries in the pellets sintered from Cu5 FeS4-x Sex colloidal powders. Thermoelectric property measurement demonstrates that alloying Se increases the carrier concentration, leading to much-improved power factor in Se-substituted Cu5 FeS4 , for example, 0.84 mW m-1 K-2 at 726 K for Cu5 FeS3.6 Se0.4 ; low lattice thermal conductivity is also achieved, due to intrinsic structural complexity, distorted crystal structure, and existing twin boundaries and point defects. As a result, a maximum zT of 0.75 is attained for Cu5 FeS3.6 Se0.4 at 726 K, which is about 23% higher than that of Cu5 FeS4 and compares favorably to that of reported Cu5 FeS4 -based materials. In addition, the Cu5 FeS4-x Sex samples containing twin boundaries also obtain improved hardness compared to the ones fabricated by melting-annealing or ball milling. This work demonstrates an effective twin engineering-composition tuning strategy toward enhanced thermoelectric and mechanical properties of Cu5 FeS4 -based materials.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Rational Electronic and Structural Designs Advance BiCuSeO Thermoelectrics

Yan Gu,Xiao‐Lei Shi,Lin Pan,Wei‐Di Liu,Qiang Sun,Xiao Tang,Liang‐Zhi Kou,Qing‐Feng Liu,Yi‐Feng Wang,Zhi‐Gang Chen

DOI: https://doi.org/10.1002/adfm.202101289

IF: 19

2021-04-10

Advanced Functional Materials

Abstract:In this work, a record high thermoelectric figure-of-merit ZT of 1.6 ± 0.2 at 873 K in p-type polycrystalline Bi0.94Pb0.06CuSe1.01O0.99 by a synergy of rational band manipulation and novel nanostructural design is reported. First-principles density functional theory calculation results indicate that the density of state at the Fermi level that crosses the valence band can be significantly reduced and the measured optical bandgap can be enlarged from 0.70 to 0.74 eV by simply replacing 1% O with 1% Se, both indicating a potentially reduced carrier concentration and in turn, an improved carrier mobility and a boosted power factor up to 9.0 µW cm−1 K−2. Meanwhile, comprehensive characterizations reveal that under Se-rich condition, Cu2Se secondary microphases and significant lattice distortions triggered by Pb-doping and Se-substitution can be simultaneously achieved, contributing to a reduced lattice thermal conductivity of 0.4 W m−1 K−1. Furthermore, a unique shear exfoliation technique enables an effective grain refinement with higher anisotropy of the polycrystalline pellet, leading to a further improved power factor up to 10.9 µW cm−1 K−2 and a further reduced lattice thermal conductivity of 0.30 W m−1 K−1, which gives rise to record high ZT.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Complex lattice occupation of copper leading to enhanced thermoelectric performance in n-type PbSe

Yalin Shi,Mingkai He,Minchao Cui,Weishuai Wang,Baopeng Ma,Fudong Zhang,Beiquan Jia,Xiaolian Chao,Zupei Yang,Di Wu

DOI: https://doi.org/10.1039/d4ta05201c

IF: 11.9

2024-09-11

Journal of Materials Chemistry A

Abstract:Among mid-temperature thermoelectric materials, PbSe is deemed as a natural replacement of PbTe owing to the much larger abundance of selenium than tellurium. Usually, extra Cu can enter the tetrahedral interstices of PbSe as an effective n-type dopant and significantly enhance its thermoelectric properties; however, anomalously low lattice thermal conductivity as reported due to extra Cu doping gave rise to controversies about the significance of the achieved thermoelectric performance. In this work, we introduced another method of Cu incorporation, i.e. , Cu 2 Se alloying, and systematically discussed its distinction from the method of extra Cu doping. Cu 2 Se alloying was found to be able to complicate the lattice occupation of Cu in PbSe by introducing Cu Pb –Cu VF pair defects while offering no free electrons. Ultimately, by combining the two methods of Cu incorporation, we achieved a superior peak figure of merit ( ZT ) value of 1.56 at 773 K and an average ZT value of ∼1.01 at 323–773 K in the composition of PbSe–3% Cu 2 Se–0.8% Cu. Notably, the enhancements were achieved without any lattice thermal conductivity anomaly as seen in the cases using extra Cu doping alone.

materials science, multidisciplinary,chemistry, physical,energy & fuels

Remarkably high thermoelectric performance of Cu<sub>2−x</sub>Li<sub>x</sub>Se bulks with nanopores

Remarkably high thermoelectric performance of Cu2-xLixSe bulks with nanopores

Thermoelectric Properties of Strained -Cu<sub>2</sub>Se

High thermoelectric performance and low thermal conductivity in Cu 2- x Na x Se bulk materials with micro-pores

Facile Synthesis of Monodisperse Cu3SbSe4 Nanoparticles and Thermoelectric Performance of Cu3SbSe4 Nanoparticle-Based Materials

Enhanced Stability and Thermoelectric Performance in Cu 1.85 Se-Based Compounds

Ultralow Thermal Conductivity and High ZT of Cu2Se-based Thermoelectric Materials Mediated by TiO2−n Nanoclusters

Thermoelectric Properties of Cu2Se Nano-Thin Film by Magnetron Sputtering

In-situ formed nano-pore induced by Ultrasonication boosts the thermoelectric performance of Cu2Se compounds

Remarkable Enhancement in Thermoelectric Performance of BiCuSeO by Cu Deficiencies.

High thermoelectric performance of Cu3SbSe4 nanocrystals with Cu2-xSe in situ inclusions synthesized by a microwave-assisted solvothermal method

Thermoelectric performance enhancement of eco-friendly Cu 2 Se through incorporating CB 4

First-principles investigation on the thermoelectric performance of half-Heusler compound CuLiX(X = Se, Te)

Enhanced thermoelectric performance of CuGaTe2 based composites incorporated with nanophase Cu2Se

Ultralow Thermal Conductivity and Extraordinary Thermoelectric Performance Realized in Codoped Cu3SbSe4 by Plasma Spark Sintering

Interface‐Enhanced High‐Temperature Thermoelectricity in Cu1.99Se/B4C Composites with Synergistically Improved Mechanical Strength

Thermoelectric Performance of Surface-Engineered Cu 1.5- x Te-Cu 2 Se Nanocomposites

Defect Chemistry Engineering Promotes the Dopability of Cu for an Extraordinary Thermoelectric Performance of Hole-Doped PbSe with Resonant States

Realizing Enhanced Thermoelectric Performance and Hardness in Icosahedral Cu 5 FeS 4− x Se x with High‐Density Twin Boundaries

Rational Electronic and Structural Designs Advance BiCuSeO Thermoelectrics

Complex lattice occupation of copper leading to enhanced thermoelectric performance in n-type PbSe