Abstract:Quantum dot (QD) light-emitting diodes (LEDs) are ideal for large-panel displays because of their excellent efficiency, colour purity, reliability and cost-effective fabrication1–4. Intensive efforts have produced red-, green- and blue-emitting QD-LEDs with efficiencies of 20.5 per cent4, 21.0 per cent5 and 19.8 per cent6, respectively, but it is still desirable to improve the operating stability of the devices and to replace their toxic cadmium composition with a more environmentally benign alternative. The performance of indium phosphide (InP)-based materials and devices has remained far behind those of their Cd-containing counterparts. Here we present a synthetic method of preparing a uniform InP core and a highly symmetrical core/shell QD with a quantum yield of approximately 100 per cent. In particular, we add hydrofluoric acid to etch out the oxidative InP core surface during the growth of the initial ZnSe shell and then we enable high-temperature ZnSe growth at 340 degrees Celsius. The engineered shell thickness suppresses energy transfer and Auger recombination in order to maintain high luminescence efficiency, and the initial surface ligand is replaced with a shorter one for better charge injection. The optimized InP/ZnSe/ZnS QD-LEDs showed a theoretical maximum external quantum efficiency of 21.4 per cent, a maximum brightness of 100,000 candelas per square metre and an extremely long lifetime of a million hours at 100 candelas per square metre, representing a performance comparable to that of state-of-the-art Cd-containing QD-LEDs. These as-prepared InP-based QD-LEDs could soon be usable in commercial displays. A method of engineering efficient and stable InP/ZnSe/ZnS quantum dot light-emitting diodes (QD-LEDs) has improved their performance to the level of state-of-the-art cadmium-containing QD-LEDs, removing the problem of the toxicity of cadmium in large-panel displays.

Efficient Solution-Processed Green InP-Based Quantum Dot Light-Emitting Diodes with a Stepwise Hole Injection Layer

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

Efficient and Bright Green InP Quantum Dot Light-Emitting Diodes Enabled by a Self-Assembled Dipole Interface Monolayer

High efficiency green InP quantum dot light-emitting diodes by balancing electron and hole mobility

Solution Processed Light Emitting Diode Based on InP Quantum Dots with Hybrid Emissive Layer

Highly efficient green InP-based quantum dot light-emitting diodes regulated by inner alloyed shell component

High‐Efficiency Green InP Quantum Dot‐Based Electroluminescent Device Comprising Thick‐Shell Quantum Dots

Efficient Green InP-based QD-LED by Controlling Electron Injection and Leakage

Green InP/ZnSeS/ZnS Core Multi‐Shelled Quantum Dots Synthesized with Aminophosphine for Effective Display Applications

P-9.7: Stable Quantum Dot Light-Emitting Diodes via Adopting Solution-Processed All-Inorganic Heterostructure

Optimization of carrier transport layer: A simple but effective approach toward achieving high efficiency all-solution processed InP quantum dot light emitting diodes

Boosting Efficiency of InP Quantum Dots-Based Light-Emitting Diodes by an In-Doped ZnO Electron Transport Layer

All-solution-processed High-Performance Quantum Dot Light Emitting Devices Employing an Inorganic Thiocyanate As Hole Injection Layer

Highly efficient and stable InP/ZnSe/ZnS quantum dot light-emitting diodes

High-Performance, Solution-Processed, and Insulating-Layer-Free Light-Emitting Diodes Based on Colloidal Quantum Dots.

Doping bilayer hole-transport polymer strategy stabilizing solution-processed green quantum-dot light-emitting diodes

Realization of Highly Efficient InP Quantum Dot Light‐Emitting Diodes through In‐Depth Investigation of Exciton‐Harvesting Layers

Overcoming the Electroluminescence Efficiency Limitations in Quantum‐Dot Light‐Emitting Diodes

Efficient Green Light-Emitting Diodes Based on Alloy Quantum Dots with an Organic/Inorganic Hybrid Surface Passivation

Design of the Hole-Injection/Hole-Transport Interfaces for Stable Quantum-Dot Light-Emitting Diodes

Boosting Efficiency and Stability of Green InP Quantum Dot Light-Emitting Diodes by Interface Dipole Modulation