Rich Device Physics Found in Photoresponses of Low-Dimensional Photodetectors by Fitting With Explicit Photogain Theory

Kai Li,Jiajing He,Wenyu Zhang,Huayou Liu,Yaping Dan

DOI: https://doi.org/10.1109/LED.2022.3145028

IF: 4.8157

2022-01-01

IEEE Electron Device Letters

Abstract:In this work, we employed our newly established explicit photogain theory to probe physics in nanodevices at single device level. A single fitting of the explicit photogain theory to experimental photoresponses allows us to find important device parameters including surface depletion region width W-dep, doping concentration N-A (or N-D), carrier mobility mu(p) (or mu(n)), minority recombination lifetime tau(0) and surface recombination velocity V-srv. These parameters are often difficult to calibrate using traditional semiconductor characterization techniques as the size of semiconductor devices scales down. The extracted parameters were verified with independent Hall effect measurements and other experiments. It shows that this technique is simple, nondestructive and accurate enough to probe the physics in nanodevices at single device level.