Enhanced Ferro- and Piezoelectric Properties of a Sol–gel Derived BiFe0.95Mn0.05O3 Thin Film on Bi2O3-buffered Pt/Ti/SiO2/Si Substrate
Dehui Li,Xiaoqiang Sun,Xiaohong Chuai,Zhifa Wu,Zijian Cao,Yunfei Yan,Daming Zhang
DOI: https://doi.org/10.1016/j.jcrysgro.2011.10.010
IF: 1.8
2012-01-01
Journal of Crystal Growth
Abstract:The BiFe0.95Mn0.05O3 films were fabricated on Pt/Ti/SiO2/Si and Bi2O3/Pt/Ti/SiO2/Si substrates using a sol–gel process. Saturated square P–E hysteresis loops can be observed at frequencies ranging from 1 to 16.7kHz for both films. The BiFe0.95Mn0.05O3 film on Bi2O3/Pt/Ti/SiO2/Si exhibits a larger 2Pr (∼156μC/cm2), smaller 2Ec (∼510kV/cm), more symmetric P–E loops, stronger charge retaining capability (the loss of ΔP is only 2% after 104s) and fatigue resistance (no loss of ΔP is observed after 1010 switching cycles) compared to the film deposited directly on Pt/Ti/SiO2/Si. More importantly, the former can be uniformly polarized using a piezoelectric-mode atomic force microscopic system and exhibits a larger piezoelectric coefficient (∼64pm/V). These results should be due to the Bi2O3 buffer layer, which can favor the grain growth and hence elimination of defect complexes formed between the negatively charged defects such as (MnFe3+2+)′ or (FeFe3+2+)′ and oxygen vacancies.