Abstract:Electrical switching of magnetization through spin–orbit torque (SOT) induced by a composition gradient in single‐layer L10‐FePt has garnered considerable research interest owing to its inherent superior perpendicular magnetic anisotropy (PMA) that provides ultrahigh capacity to magnetic storage and memory devices. However, a large in‐plane external magnetic field is typically required to assist SOT‐driven switching, which is still a limitation for the practical application of L10‐FePt. This study reports realizable field‐free magnetization switching by SOT via Cr doping to form a single‐layer magnetic structure with an in‐plane magnetization component oriented toward L10‐FeCrPt [110] direction that strongly depends on the magnetocrystalline anisotropy. The Cr doping yields a considerable in‐plane exchange‐coupling effective field that is conducive toward disintegrating the rotational switching symmetry and facilitates field‐free switching in single‐layer films with PMA. Furthermore, this in‐plane effective field exhibits a nonmonotonic evolution with respect to the Cr‐doping concentration, which is validated using first‐principles calculation with a frustration‐based model of magnetic exchange interactions. Thus, this study delivers an attractive method to facilitate the field‐free electrical manipulations of magnetization in single‐layer ferromagnets to motivate innovative designs for advanced spintronics devices. A deterministic field‐free switching through bulk spin‐orbit torque is achieved in a perpendicular magnetized L10‐FeCrPt single layer. A considerable in‐plane exchange coupling effective field along the [110] orientation due to Cr doping is mainly responsible for the field‐free capability. This work provides a practical route for utilization of potential single‐layer magnetic materials in spin–orbit torque devices.

Pseudo-spin-valve with L10 (111)-Oriented FePt Fixed Layer

Pseudo-Spin-Valve With L1(0) (111)-Oriented Fept Fixed Layer

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Pinning effect and thermal stability study in L10 FePt-pinned spin valves

Study Of Spin Valves With L1(0)-Fept Pinning Layer And Different Pinned Layers

Study of Spin Valves With L 10-FePt Pinning Layer and Different Pinned Layers

Pinning Effect And Thermal Stability Study In L1(0) Fept-Pinned Spin Valves

Study of Spin Valves With $L 1_{0}$-FePt Pinning Layer and Different Pinned Layers

Bulk Spin Torque-Driven Perpendicular Magnetization Switching in L10 FePt Single Layer.

Bulk Spin Torque‐Driven Perpendicular Magnetization Switching in L10 FePt Single Layer

Pinning effect and thermal stability study in L1 FePt-pinned spin valves

Current-Induced Magnetic Switching in an L10 FePt Single Layer with Large Perpendicular Anisotropy Through Spin–Orbit Torque

Field-free spin–orbit torque switching in L 1 0 -FePt single layer with tilted anisotropy

Field‐Free Magnetization Switching Driven by Spin–Orbit Torque in L 1 0 ‐FeCrPt Single Layer

Field free magnetization switching in perpendicularly magnetized Pt/Co/FeNi/Ta structure by spin orbit torque

Disorder dependent spin-orbit torques in L10 FePt single layer

Pseudo-Spin-Valve Trilayer Using Amorphous CoNbZr Layer: Giant Magnetoresistance, Domain Structures and Potentials for Spin-Electronic Devices

Field Free Switching Through Bulk Spin-Orbit Torque in L10-FePt Films Deposited on Vicinal Substrates

Field-free switching through bulk spin — orbit torque in L 1 0 -FePt films deposited on vicinal substrates

Electric-Field-Controlled Nonvolatile Magnetization Rotation and Magnetoresistance Effect in Co/Cu/Ni Spin Valves on Piezoelectric Substrates.

Highly Efficient Spin-Orbit Torque in a Perpendicular Synthetic Ferrimagnet