A NEW TYPE HYSTERESIS LOOP IN <font>SiN/GdFeCoSi/SiN</font> SANDWICH STRUCTURE

YANLING ZHAO,SHIQI WANG,KEIJI SHONO,XIANGYOU YU,MU LU,HONGRU ZHAI
DOI: https://doi.org/10.1142/s021798490100307x
2001-01-01
Modern Physics Letters B
Abstract:A new type of inverted hysteresis loop was observed in an amorphous SiN/GdFeCoSi/SiN film, in which a magnetic GdFeCoSi layer with a thickness of 40 nm was sandwiched by SiN capping and buffer layers 5 nm thick. An inverted hysteresis loop with negative remanence appeared, when an applied field was perpendicular to the film plane, with remanance ratio of 0.4 and HC=120 Oe. An FMR experiment study showed that two magnetic phases existed in the system. A major magnetic phase had an easy-plane anisotropy and the other minor magnetic phase had an easy-normal anisotropy. By assuming an antiferromagnetic exchange coupling between them, the inverted loops can be explained.
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