Abstract:Author(s): Yan Li-Bin, Bai Yu-Rong, Li Pei, Liu Wen-Bo, He Huan, He Chao-Hui, Zhao Xiao-Hong As an important second-generation semiconductor material, indium phosphide (InP) possesses excellent advantages such as a wide bandgap, high electron mobility, high photoelectric conversion efficiency, and strong radiation resistance. It is considered an excellent material for electronic devices in aerospace applications. However, point defects generated by space radiation particles in InP electronic devices can cause their electrical performance to degrade severely. In this study, first-principles calculations are employed to investigate the stable structures of point defects in InP and calculate the migration energy values of nearest-neighbor defects. Four stable structures of In vacancies and three stable structures of P vacancies are identified by constructing the stable structures of point defects in different charge states. The migration process of vacancy defects is studied, revealing that the migration energy of P vacancies is higher than that of In vacancies. Moreover, charged vacancy defects exhibit higher migration energy values than neutral vacancies. Regarding the migration process of interstitial defects, it is found that the migration energy of interstitial defects is smaller than that of vacancy defects. In the calculation of In interstitial migration process with different charge states, two different migration processes are found. Besides, during the migration calculations of P interstitial, a special intermediate state is discovered, resulting in multiple paths migrating to the nearest-neighbor position in the migration energy barrier diagram. The research results are helpful to understand the formation mechanism and migration behavior of defects in InP materials, and are important in designing and manufacturing InP devices with long-term stable operation in space environment. Acta Physica Sinica. 2024 73(18): 183101. Published 2024-09-20

The effects of impurities on the generalized stacking fault energy of InP by first-principles calculation

Effects of Sulfur Doping on Generalized Stacking Fault Energy of Indium Phosphide

Generalized-Stacking-Fault Energy And Dislocation Properties In Bcc Fe: A First-Principles Study

Effect of alloying elements on elastic properties, generalized stacking fault energy, and critical resolved shear stress of Pd metal: A first principle study

Effect of strain on generalized stacking fault energies and plastic deformation modes in fcc-hcp polymorphic high-entropy alloys: A first-principles investigation

First-principles Study of the Effect of BiGa Heteroantisites in GaAs:Bi Alloy

Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralski silicon

Generalized stacking fault energies of alloys

Energetics, electronic structure and electric polarization of basal stacking faults in wurtzite GaN and ZnO

First-Principles Study on the Elastic Constants and Structural and Mechanical Properties of 30° Partial Dislocation in GaAs

First-principle study of the basal-plane stacking fault energies of ternary Mg alloys

Stacking defects in GaP nanowires: Electronic structure and optical properties

First-Principle Study of Dislocation Slips in Impurity Doped Graphene

Generalized Stacking Fault Energy of {10-11}<11-23> Slip System in Mg-Based Binary Alloys: A First Principles Study

Effect of interstitial-driven lattice expansion on the stacking fault energy in austenitic steels

Predicting the variation of stacking fault energy for binary Cu alloys by first-principles calculations

Enhanced Quantum-Confined Pockels Effect Insigesuperlattices

First-Principles Study on Stacking Fault Energy of γ-Fe–Mn Alloys

First-principles calculations of point defect migration mechanisms in InP

Generalized stacking fault energies and Peierls stresses in refractory body-centered cubic metals from machine learning-based interatomic potentials

Insights into plastic deformation mechanisms of austenitic steels by coupling generalized stacking fault energy and semi-discrete variational Peierls-Nabarro model