Abstract:Palladium diselenide (PdSe2), as an emerging two-dimensional (2D) layered material, is gaining growing attention in nanoelectronics and optoelectronics due to its thickness-dependent band gap, high carrier mobility, and good air stability. However, its asymmetric pentagon structure is inclined to breed defects. Herein, the intrinsic Se vacancy-induced trap states and their influence on the hopping transport in PdSe2 are systematically investigated. We provide direct evidence that Se vacancies exist in the fresh PdSe2 samples, which results in the localized trapping states inside the band gap. For the few-layer PdSe2, at 77 K, the trap density (Dit) near the midgap is about 2.2 × 1013 cm-2 eV-1, whereas at 295 K, the Dit value increases to ∼7.1 × 1013 cm-2 eV-1. By comparison, the multilayer PdSe2 shows nonobvious temperature-dependent trap behaviors with almost unchanged Dit values of ∼8.1 × 1012 cm-2 eV-1 at midgap in the temperature range between 77 and 295 K. Thus, trap states in the few-layer PdSe2 are more vulnerable to temperature effect. Transport measurements demonstrated that both few-layer and multilayer PdSe2 field-effect transistor (FET) devices show n-type dominant ambipolar behaviors. The electron mobility in the multilayer PdSe2 FET is nearly 15-fold higher than that in the few-layer PdSe2 FET at 315 K, probably owing to the decreased effective mass and suppression of charge impurity scattering in the thicker channel material. However, both FET devices exhibit variable-range hopping over a temperature range from 77 to 240 K and thermally activated hopping at temperatures above 240 K. The hopping transport mechanism is strongly associated with the Se vacancy-induced localized states with poor screening and strong potential fluctuations. This study reveals the important role of structural defects in tailoring and improving the charge transport properties of PdSe2.

Ultrafast Dynamics of Defect-Assisted Auger Process in PdSe2 Films: Synergistic Interaction Between Defect Trapping and Auger Effect.

Layer-dependent Ultrafast Carrier Dynamics of PdSe2 Investigated by Photoemission Electron Microscopy

Layer-dependent ultrafast carrier dynamics of PdSe 2 investigated by photoemission electron microscopy

Probing Intrinsic Defect-Induced Trap States and Hopping Transport in Two-Dimensional PdSe2 Semiconductor Devices

Broadband Nonlinear Photoresponse and Ultrafast Carrier Dynamics of 2D PdSe 2

Ultrafast Carrier Dynamics and Bandgap Renormalization in Layered PtSe 2

Temperature-sensitive Spatial Distribution of Defects in PdSe2 Flakes

Defects in Highly Anisotropic Transition-Metal Dichalcogenide PdSe<sub>2</sub>

Defects inducing anomalous exciton kinetics in monolayer WS2

Excitation-density and Excess-Energy Dependence of Ultrafast Dynamics of Photoexcited Carriers in Intrinsic Bulk CdTe

Unveiling Defect-Mediated Carrier Dynamics in Monolayer Semiconductors by Spatiotemporal Microwave Imaging

Spatially heterogeneous ultrafast interfacial carrier dynamics of 2D-MoS2 flakes

Ultrafast Photocarrier Dynamics in Dirac Semimetal PtTe2 Thin Film

Ultrafast Photocarrier Dynamics in a 3D Dirac Semimetal Cd3As2 Film Studied with Terahertz Spectroscopy

Extraordinary Polarization and Thickness Dependences of Photocarrier Dynamics in PdSe2 Ribbons

Ultrafast Electron Cooling and Decay in Monolayer WS2 Revealed by Time- and Energy-Resolved Photoemission Electron Microscopy

Unusual photocarrier and coherent phonon dynamics behaviors of layered PdSe2 unveiled by ultrafast spectroscopy of the edge surface

Transient Superdiffusion of Energetic Carriers in Transition Metal Dichalcogenides Visualized by Ultrafast Pump-Probe Microscopy

Direct Visualization of Exciton Transport in Defective Few-Layer WS2 by Ultrafast Microscopy

Point and complex defects in monolayer Pd Se 2 : Evolution of electronic structure and emergence of magnetism

Temperature-sensitive spatial distribution of defects in flakes