Abstract:Abstract Miniaturized nonvolatile reconfigurable optical components with a subwavelength thickness, extremely compact size, high-speed response, and low power consumption will be the core of next-generation all-optical integrated devices and photonic computing to replace traditional bulky optical devices and integrated circuits, which are reaching physical limitations of Moore’s law. Metasurfaces, as ultrathin planar surfaces, have played a major role in controlling the amplitude, phase, and polarization of electromagnetic waves and can be combined with various active modulation methods to realize a variety of functional devices. However, most existing reconfigurable devices are bounded in volatile nature with constant power to maintain and single functionality, which restricts their further extensive applications. Chalcogenide phase change materials (PCM) have attracted considerable attention due to their unique optical properties in the visible and infrared domains, whereas in the terahertz (THz) regime, research on the reversible phase transition in large-scale areas and applications of Ge 2 Sb 2 Te 5 (GST) are still under exploration. Here, we achieved reversible, repeated, and large-area switching of GST with the help of optical and thermal stimuli. Large-area amorphization with a 1 cm diameter of GST is realized by using a single laser pulse. Then, we incorporate GST into metasurface designs to realize nonvolatile, reconfigurable, multilevel, and broadband terahertz modulators, including the anomalous deflector, metalens, and focusing optical vortex (FOV) generator. Experimental results verify the feasibility of multilevel modulation of THz waves in a broadband frequency range. Moreover, the modulators are reusable and nonvolatile. The proposed approach presents novel avenues of nonvolatile and reconfigurable metasurface designs and can enable wide potential applications in imaging, sensing, and high-speed communications.

Volatile and Nonvolatile Switching of Phase Change Material Ge2Sb2Te5 Revealed by Time-Resolved Terahertz Spectroscopy

Phase change of Ge 2 Sb 2 Te 5 under terahertz laser illumination

Reconfigurable and Nonvolatile Terahertz Metadevices Based on a Phase-Change Material

Femtosecond structural transformation of phase-change materials far from equilibrium monitored by coherent phonons

The Ultrafast Optical Response of the Amorphous and Crystalline States of the Phase Change Material Ge$_2$Sb$_2$Te$_5$

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Optically Tunable Ultrafast Broadband Terahertz Polarimetric Device Using Nonvolatile Phase‐Change Material

Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses

Nonvolatile reconfigurable terahertz wave modulator

An Investigation into the Kinetics and Mechanism of Phase Transitions in Optical Phase Change Ternary Alloy $Ge_2Sb_2Te_5$

Broadband and ultrafast terahertz modulation with GeTe thin films

Time-resolved temperature mapping leveraging the strong thermo-optic effect in phase-change devices

Sub-Picosecond Non-Equilibrium States in the Amorphous Phase of GeTe Phase-Change Material Thin Films

Photoinduced ultrafast transition of the local correlated structure in chalcogenide phase-change materials

A phase-change thin film-tuned photonic crystal device

Ge2Sb2Te5-based efficient switching between a cross-polarization conversion and a circular-to-linear polarization conversion

Time-resolved reversible optical switching of the ultralow-loss phase change material Sb2Se3

Phase change-photonic framework for terahertz wave control

Photoexcitation Induced Ultrafast Nonthermal Amorphization in Sb2Te3

Electrode area dependent switching behavior of Ge2Sb2Se4Te1 phase change material driven by narrow voltage pulse