Abstract:The quantification of fixed vs molecular dipole on semiconductor electrode (silicon) is achieved by determining redox‐couple‐dependent response of 'thermodynamic' EFB, functional VOC and the interfacial potential drops VHL and Vmol. Such determinations allow for the inherent photovoltage limitation(s) in a semiconductor‐based light‐to‐chemical‐energy device. We investigate the flat band voltage (VFB) of silicon (Si) surfaces functionalized with methyl (Me), 9‐anthracene (Anth), 1,8‐anthracene (DiAnth; two attachment points), and 9‐bianthracene (BiAnth) on n‐type and p‐type Si substrates. Flat band potential (EFB, by Mott‐Schottky) provided VFB (or VBI) dependent on the contacted redox couple (ERedox). On p‐type Si, VFB increased linearly until a limiting value was reached; similarly, the n‐type Si VFB decreased linearly until it plateaued at more negative potentials. Notably, the slope of VFB depended on the surface modifier, exhibiting opposite trends for p‐type and n‐type Si. Curiously, anthracene‐functionalized p‐Si exhibited an unexpectedly more shallow (and beneficial) slope than ‐methyl, attributed to the polarizability of the anthracene π electron cloud and a potential drop across the molecular interface. On n‐type Si, anthracene‐functionalized surfaces displayed a higher slope than ‐methyl, suggesting a gradual cancellation of the voltage shift effect due to a fixed surface dipole. We also quantified the interfacial potential drop across p‐Si–Anth as 275 mV using variable frequency (10 kHz vs 1 kHz) Mott‐Schottky analysis. The interfacial potential drop and dipoles that result from molecular functionalization are thus critical design parameters for PEC cells that utilize moderate‐potential redox couples or reactions; however, such effects are negligible with redox couples that reside at or beyond the semiconductor band‐edge.

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Absence of a Relationship Between Surface Conductivity and Electrochemical Rates: Redox-Active Monolayers on Si(211), Si(111), and Si(110)

Reproducible Flaws Unveil Electrostatic Aspects of Semiconductor Electrochemistry

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Role of Interfacial Potential Drops on Redox‐Couple Dependent Voltages Using Hybridized Si(111)–(Bis)Anthracene Photoelectrodes

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Silicon Photoelectrode Thermodynamics and Hydrogen Evolution Kinetics Measured by Intensity-Modulated High-Frequency Resistivity Impedance Spectroscopy

Link between anisotropic electrochemistry and surface transformations at single‐crystal silicon electrodes: Implications for lithium‐ion batteries

Adapting Simultaneous in Operando Electrochemical Quartz Crystal Microbalance and Electrochemical Impedance Spectroscopy to Studies of Solid Electrolyte Interface Layer Formation on Amorphous Silicon Anodes

Photoelectrochemistry of Redox-Active Self-Assembled Monolayers Formed on n-Si/Au Nanoparticle Photoelectrodes

Study and modeling of the Solid Electrolyte Interphase behavior on nano-silicon anodes by Electrochemical Impedance Spectroscopy

Electrochemical Shot-Noise of a Redox Monolayer

Mechanistic Insights into the Potentiodynamic Electrosynthesis of PEDOT Thin Films at a Polarizable Liquid|Liquid Interface

Unveiling Electrochemical Properties of Silicon for Stable Cycling Performance of Silicon Anode Materials

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Influence of Anions on Electrochemical Redox Reactions and Electrical Properties Using A Viologen Derivative

Mechanistic Insights into the Potentiodynamic Electrosynthesis of PEDOT Thin Films at a Polarisable Liquid|Liquid Interface

Functionalized Silicon Electrodes Toward Electrostatic Catalysis