Boosting Photoelectrochemical Activity of Bismuth Vanadate by Implanting Oxygen-Vacancy-rich Cobalt (Oxy)hydroxide.

Huanhuan Sun,Wei Hua,Shiyu Liang,Yueying Li,Jian-Gan Wang
DOI: https://doi.org/10.1016/j.jcis.2021.12.086
IF: 9.9
2021-01-01
Journal of Colloid and Interface Science
Abstract:Surface charge recombination is regarded as a detrimental factor that severely downgrades the photo electrochemical (PEC) performance of bismuth vanadate (BiVO4). In this work, we demonstrate defect rich cobalt (oxy)hydroxides (Co(O)OH) as an excellent cocatalyst nanolayer sheathed on BiVO4 to substantially improve the PEC water oxidation activity. The self-transformation of metal-organic framework produces an ultrathin Co(O)OH layer rich in oxygen vacancies, which could serve as a powerful hole extraction engine to promote the charge transfer/separation efficiency as well as an excellent oxygen evolution reaction catalyst to accelerate the surface water oxidation kinetics. As a result, the BiVO4/Co (O)OH hybrid photoanode achieves remarkably inhibited surface charge recombination and presents a prominent photocurrent density of 4.2 mA cm(-2) at 1.23 V vs. RHE, which is around 2.6-fold higher than that of the pristine BiVO4. Moreover, the Co(O)OH cocatalyst nanolayer significantly reduces the onset potential of BiVO4 photoanodes by 200 mV. This work provides a versatile strategy for rationally preparing oxygen-vacancy-rich cocatalysts on various photoanodes toward high-efficient PEC water oxidation. (C) 2021 Elsevier Inc. All rights reserved.
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