Low-temperature Cu/SiO2 Hybrid Bonding Using a Novel Two-Step Cooperative Surface Activation

Qiushi Kang,Chenxi Wang,Ge Li,Shicheng Zhou,Yanhong Tian

DOI: https://doi.org/10.1109/icept52650.2021.9568007

2021-01-01

Abstract:Compared with continuous node scaling in a two-dimensional (2D) plane, advanced three-dimensional (3D) integration finds a new pathway to expand Moore's Law in the vertical direction. The essence of advanced 3D integration technology relies on the dense vertical interconnection, and state-of-the-art metal/oxide hybrid bonding provides such an ideal fine-pitch structure (≤ 1 µm) by eliminating microbump and underfill. Of the various hybrid bonding platform, Cu/SiO 2 hybrid bonding structure is the most promising candidate due to the excellent electrical and mechanical properties of Cu and SiO 2 , respectively. However, the feasible Cu/SiO 2 hybrid bonding technology often requires high temperature (-400°C) currently, which is not desirable for temperature-sensitive chips. Here, we develop a novel two-step cooperative surface activation method to overcome this bottleneck. Based on the combination of plasma activation and acid treatment of this cooperative surface activation, the atomic smooth Cu and SiO 2 surface with hydrophilic layers were obtained, and the strong homogeneous bonding of Cu-Cu and SiO 2 -SiO 2 was realized at 200°C. Eventually, the Cu/SiO 2 hybrid bonding device was successfully achieved, which void-free and atomically interconnected Cu-Cu, SiO 2 -SiO 2 , and even Cu-SiO 2 interfaces were obtained simultaneously. This hybrid bonding structure realized by cooperative surface activation brings unprecedented 3D integration feasibility and flexibility.