Abstract:A monolithic silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) image-detecting integrated circuit of the active-pixel-sensor type, now undergoing development, is designed to operate at visible and near-infrared wavelengths and to offer a combination of high quantum efficiency and low diffusion and capacitive cross-talk among pixels. The imager is designed to be especially suitable for astronomical and astrophysical applications. The imager design could also readily be adapted to general scientific, biological, medical, and spectroscopic applications. One of the conditions needed to ensure both high quantum efficiency and low diffusion cross-talk is a relatively high reverse bias potential (between about 20 and about 50 V) on the photodiode in each pixel. Heretofore, a major obstacle to realization of this condition in a monolithic integrated circuit has been posed by the fact that the required high reverse bias on the photodiode is incompatible with metal oxide/semiconductor field-effect transistors (MOSFETs) in the CMOS pixel readout circuitry. In the imager now being developed, the SOI structure is utilized to overcome this obstacle: The handle wafer is retained and the photodiode is formed in the handle wafer. The MOSFETs are formed on the SOI layer, which is separated from the handle wafer by a buried oxide layer. The electrical isolation provided by the buried oxide layer makes it possible to bias the MOSFETs at CMOS-compatible potentials (between 0 and 3 V), while biasing the photodiode at the required higher potential, and enables independent optimization of the sensory and readout portions of the imager.

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A Cmos Image Sensor For Monochromatic Spectrum Imaging

A CMOS Integrated W-band Passive Imager

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SOI CMOS Imager with Suppression of Cross-Talk

CMOS Low Data Rate Imaging Method Based on Compressed Sensing

The Design of Image Acquisition System Based on CMOS Digital Image Sensor

Design Of A High Flexible Block-Based Computational Cmos Image Sensor

A Single-Transistor Active Pixel Cmos Image Sensor Architecture

Design, Analysis, and Optimization of a CMOS Active Pixel Sensor

A Dual-Mode CMOS Image Sensor Based on In-Pixel Frame Differencing

CMOS Image Sensor With Area-Efficient Block-Based Compressive Sensing

Design and fabrication of vertically-integrated CMOS image sensors

A Low Power Dissipation High-Speed CMOS Image Sensor with Column-Parallel Sigma-Delta ADCs

Research of CMOS Image Sensor

A Compressive Sensing Imaging Algorithm Based on CMOS Image Sensor

Microimage Processing System Based On Cmos Sensor

A Low-Noise CMOS Image Sensor With Digital Correlated Multiple Sampling

Concept for a CMOS Image Sensor Suited for Analog Image Pre-Processing

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A Nyquist-rate pixel-level ADC for CMOS image sensors