Abstract:Laser-sustained plasmas (LSP), which can be utilized for a novel radiation light source, have advantages such as high irradiance, broad spectral range, and stable emission, demonstrating significant applications for wafer inspection in the field of the semiconductor industry. This paper revisited the historical development of LSP research and introduced fundamental physical processes in LSP. The mathematical description equations for LSP and methods for calculating plasma parameters are given, based on which a time-dependent two-dimensional fluid model is established with laser-thermal-hydrodynamic coupling effects. The propagation of the laser in plasmas is investigated based on the established model, and the fundamental mechanisms in LSP, including the initial evolution process, laser energy deposition, steady-state characteristics, and instability, are explored. The effectiveness of the simulation model is confirmed through comparisons with the results from high-pressure Xe LSP experiments. The findings indicate that the mode, power, F number of incident lasers, as well as parameters including components, pressure, and flow velocity of gas, influence the steady-state properties of LSPs. Under identical power and F number conditions, Gaussian mode and annular mode lasers produce LSP with different shapes and positions. Notably, under conditions of high-power annular laser incidence, large laser F numbers, and high flow velocities, the simulation results reveal temporal and spatial instability in LSP. These simulation results contribute significantly to a deeper understanding of the underlying physical mechanisms of LSP. Furthermore, they provide a theoretical basis for the design of light source systems and the optimization of multiple parameters. The impact of laser parameters on LSP properties elucidated in this study advances not only the fundamental understanding of LSP but also offers crucial insights for the design and optimization of light source systems in various applications, particularly in the field of optical detection for semiconductor wafer inspection.

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