Abstract:Thanks to its ultrahigh carrier mobility (∼104–105 cm2 V–1 s–1), graphene shows tremendous application potential in nanoelectronics, but it cannot be applied in effective field-effect transistors (FETs) because of its intrinsic gapless band structure. Thus, introducing a bandgap for graphene is a prerequisite to realize an FET for logic applications. Herein, through first-principles GW calculations, we have predicted a series of novel Dion–Jacobson (DJ) phase halide perovskite semiconductors CsSb(Br1–xIx)4 (x = 0, 0.5, 1) with the quasi-linear (graphene-like) band edge dispersion; as the best one of which, CsSbBr2I2 exhibits a direct bandgap (0.52 eV) as well as a quasi-linear electronic dispersion, yielding an ultrasmall carrier effective mass (0.03 m0) and a high estimated carrier mobility (5 × 103 cm2 V–1 s–1). This gives a significant reference to the exploration of semiconductors with excellent transport properties. Moreover, our calculations also implicate that the DJ perovskites CsSb(Br1–xIx)4 (x = 0, 0.25, 0.5, 0.75, 1) show soft and anisotropic mechanical characteristics as well as excellent electronic, transport, and optical properties, which demonstrate their multifunctional application in infrared optoelectronic, high-speed electronics, and photovoltaics.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.2c00801.Calculation methods including DFT and GW calculations, optical absorption, carrier mobility and nonparabolicity parameter, mechanical properties, optimized lattice constant, one layer thicknesses, X-ray diffraction spectra, summary of the calculated mechanical parameters, band structures, crystalline structure bond lengths, atomic position, and summary of the calculated transport parameters (PDF)This article has not yet been cited by other publications.

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