Abstract:Two-dimensional (2D) photodetectors based on semiconducting transitional metal chalcogenides (TMDs) have attracted much attention because of its unique mechanical and opto-electronic properties which can be integrated into nanoscale-sized opto-electronic devices and complex circuits. However, the photodetection range of 2D TMDs materials based detectors are generally limited within the visible range due to its intrinsic relatively large band-gap. In addition, 2D TMDs materials also suffers from weak light absorption inherited from their atomically thin layers, resulting in a photoresponsivity that can be further improved. Herein, by combining 2D MoS2 with zero-dimensional (0D) PbSe quantum dots (QDs) and Au nanocrystals (NCs), a novel 2D-0D photo detector (i.e., MoS2/PbSe@Au) is fabricated. Our MoS2/PbSe@Au photodetector exploits the 2D MoS2 as the conduction channels and PbSe@Au NCs as light sensitizer, which promote the absorption of the entire device and enable appreciable photodetection extending to the near-infrared (NIR). Prominently, the mixed-dimensional photodetector exhibits high responsivity of 1.22 A/W and detectivity of 1.56*10(9) Jones (cm.Hz(1/2).W-1) at NIR (e.g., 1064 nm) compared with the MoS2 photodetector with PbSe QDs only, which are ascribed to the more efficient two-step charge transfer process between PbSe and MoS2 with the presence of Au NCs. We further identify the new carrier multiplication mechanism when comparing the photoresponse of our photodetectors at 405 nm and 635 nm. We found the extremely high EQE of MoS2/PbSe@Au photodetector at the wavelength of 405 nm (268.1%) could be ascribed to the synergism of carrier multiplication (CM) in PbSe QDs and the photo gating effect induced by Au nanoparticles. Our study demonstrates that the novel mixed-dimensional photodetectors based on CVD-grown MoS2 may provide a new route for designing and realizing high-performance optoelectronic devices with harvesting merits of hybrid nanomaterials.

Enhanced Absorption and EQE of Si MSM Photodiodes with Integrated Periodic Arrays of Holes

Enhanced Efficiency of High-Speed Si and Si-based PbSe MSM Photodiodes with Integrated Photon-Trapping Holes in 800 ~ 1550 Nm Wavelengths

Enhanced Response of Si-Based PbSe Thin Film MSM Photodetectors by Photon-Trapping Hole Array in the Surface

Rigorous coupled-wave analysis of absorption enhancement in vertically illuminated silicon photodiodes with photon-trapping hole arrays

Demonstration of enhanced absorption in thin film Si solar cells with periodic microhemisphere hole arrays

Enhanced quantum efficiency and reduction of reflection for MSM photodetectors with nano-structured surface

Cmos-Compatible Integrated Spectrometer Based on Echelle Diffraction Grating and Msm Photodetector Array

Enhanced Light Absorption in Thin Crystalline Silicon Solar Cells with Silica Nanoparticles

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Light Absorption Enhancement of Amorphous Silicon Film Coupled with Metal Nanoshells

Periodic molybdenum disc array for light trapping in amorphous silicon layer

Enhanced Visible to Near-Infrared Photodetectors Made from MoS2-based Mixed-Dimensional Structures

Enhanced Vertical Light Extraction from Ultrathin Amorphous Si–Si$_{3}$N$_{4}$ Multilayers with Photonic Crystal Patterns

4H-SiC Ultraviolet Photodetector Array with Vertical MSM Configuration

Manipulations of Light by Ordered Micro-Holes in Silicon Substrates.

Study on optical characteristics of wideband anti-reflective enhancement based on silicon square nanoconical hole arrays

Self‐assembled Dielectric Microsphere As Light Concentrators for Ultrathin‐silicon‐based Photodetectors with Broadband Enhancement

Metal–Semiconductor-Metal Structure Enhanced Quantum Dot Infrared Photodetector for Near-Infrared

Optical absorption enhancement in silicon square nanohole and hybrid square nanowire-hole arrays for photovoltaic applications

Surface silicon nanostructure for enhancement of blue light absorption

Simulation of Ge on Si Photodiode with photon-trapping micro-nano holes with -3dB bandwidth of >60 GHz at NIR wavelength