Abstract:Two-dimensional (2D) layered materials have attracted tremendous interest from the perspective of basic physics and technological applications in the last decade. Especially, the artificially assembled van der Waals (vdW) heterostructures and twisted 2D materials bring out fascinating properties, and render promising applications possible by engineering the stacking order. Here, based on first-principles calculations, we explored the interplay between stacking effect and electron-electron correlation effects in the layered vdW material of bulk 1T-NbS2 with a 2D charge density wave (CDW) order. Without considering the Coulomb correlation effects, two energetically favorable out-of-plane stacking configurations are identified: one is a metallic phase with a single-layer stacking pattern, another is a band insulator with a paired-bilayer stacking configuration. Even if the Coulomb correlation effects are taken into account, the two energetic favorable stacking orders are still far more stable than other stacking orders. Furthermore, increasing the Coulomb interactions, the paired-bilayer stacking configuration transforms from nonmagnetic band insulator to antiferromagnetic insulator, while the single-layer stacked 1T-NbS2 undergoes a Slater-Mott metal-insulator transition, which indicates the non-negligible role of electron-electron correlation interactions. In addition, the electronic structure and magnetic ground state change drastically among different stacking configurations, providing a platform to tune the electronic structures and interlayer magnetic interactions. In contrast to the widely accepted scenario of Mott localization as the driving force behind the gap formation in the CDW phase of layered transition-metal dichalcogenides, our results not only highlight the crucial role of stacking order in the electronic structures of 1T-NbS2, but also shed fresh light on the distinct effects of Coulomb interactions on different stacking arrangements.

Stacking effects on the structure and magnetic properties of MoN2

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Robust Stacking-Independent Ultrafast Charge Transfer in MoS2/WS2 Bilayers

Stacking order and Coulomb correlation effect in the layered charge density wave phase of 1 T − Nb S 2

Stacking effect and Coulomb correlation in layered charge density wave phase of 1T-NbS2

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Functional Group Induced Transformations in Stacking and Electron Structure in Mo 2 CT x /NiS Heterostructures

Effect of Stacking Type and Magnetic Moment in Spin-Valley Polarized MoS2–MoSe2 Heterobilayers

X-type antiferromagnetic stacking for spintronics

Functional group induced transformations in stacking and electron structure in Mo2CT x/NiS heterostructures

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Stacking order and interlayer coupling tuning the properties of charge density waves in layered 1T-NbSe_2

Robust Ferromagnetism in Mn-Doped Mos2 Nanostructures

Strain-Induced Isostructural and Magnetic Phase Transitions in Monolayer MoN2

Antisymmetric Magnetoresistance in a Van Der Waals Antiferromagnetic/Ferromagnetic Layered MnPS3/Fe3GeTe2 Stacking Heterostructure.

Stacking Domain Wall Magnons in Twisted van der Waals Magnets

Unusual Stacking Variations in Liquid-Phase Exfoliated Transition Metal Dichalcogenides

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