Abstract:We perform a comprehensive first-principles study of the electronic properties of phosphorene nanoribbons, phosphorus nanotubes, multilayer phosphorene sheets, and heterobilayers of phosphorene and two-dimensional (2D) transition-metal dichalcogenide (TMDC) monolayer. The tensile strain and electric-field effects on electronic properties of low-dimensional phosphorene nanostructures are also investigated. Our calculations show that the bare zigzag phosphorene nanoribbons (z-PNRs) are metals regardless of the ribbon width, whereas the bare armchair phosphorene nanoribbons (a-PNRs) are semiconductors with indirect bandgaps and the bandgaps decrease with increasing ribbon width. We find that compressive (or tensile) strains can reduce (or enlarge) the bandgap of the bare a-PNRs while an in-plane electric field can significantly reduce the bandgap of the bare a-PNRs, leading to the semiconductor-to-metal transition beyond certain electric field. For edge-passivated PNR by hydrogen, z-PNRs become semiconductor with nearly direct bandgaps and a-PNRs are still semiconductor but with direct bandgaps. The response to tensile strain and electric field for the edge-passivated PNRs is similar to that for the edge-unpassivated (bare) a-PNRs. For single-walled phosphorus nanotubes, both armchair and zigzag nanotubes are semiconductors with direct bandgaps. With either tensile strains or transverse electric field, behavior of bandgap modulation similar to that for a-PNRs can arise. It is known that multilayer phosphorene sheets are semiconductors whose bandgaps decrease with an increase in the number of multilayers. In the presence of a vertical electric field, the bandgaps of multilayer phosphorene sheets decrease with increasing electric field and the bandgap modulation is more significant with more layers. Lastly, heterobilayers of phosphorene (p-type) with an n-type TMDC (MoS2 or WS2) monolayer are still semiconductors while their bandgaps can be reduced by applying a vertical electric field as well. We also show that the combined phosphorene/MoS2 heterolayers can be an effective solar cell material. Our estimated power conversion efficiency for the phosphorene/MoS2 heterobilayer has a theoretical maximum value of 17.5%.

Scaling of Energy Gaps in Phosphorene Nanoflakes.

The Phosphorene Under The External Electronic Field And Strain

Abnormal scaling of excitons in phosphorene quantum dots.

Tuning of Excitons in Phosphorene Atomic Chains.

Excitonic ground states in phosphorene nanoflakes

Unusual Scaling Laws of the Band Gap and Optical Absorption of Phosphorene Nanoribbons

Phosphorene: Synthesis, Scale-Up, and Quantitative Optical Spectroscopy

One-dimensional Excitons in Long Phosphorene Atomic Chains

Scaling laws for band gaps of phosphorene nanoribbons: A tight-binding calculation

Suppression Of Spin And Optical Gaps In Phosphorene Quantum Dots

Adjustment of optical absorption in phosphorene through electron-phonon coupling and electric field

Effect of atomic-scale defects and dopants on phosphorene electronic structure and quantum transport properties

Excitonic Effects And Optical Spectra Of Graphene Nanoflakes

Excitonic Absorption Spectra in Graphene Nanoflakes: Tuning of Exciton Binding Energy by Dielectric Environments

Scaling Universality Between Band Gap and Exciton Binding Energy of Two-Dimensional Semiconductors

Strain-Induced Gap Transition and Anisotropic Dirac-Like Cones in Monolayer and Bilayer Phosphorene

Thermoelectric Properties of Phosphorene at the Nanoscale

Electron screening and strength of long-range Coulomb interactions in phosphorene: From bulk to nanoribbon

Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene

Phosphorene Nanoribbons, Phosphorus Nanotubes, and van der Waals Multilayers

Ab Initio Study of Tunable Band Gap of Monolayer and Bilayer Phosphorene by the Vertical Electronic Field