Abstract:In recent years, the development of artificial intelligence has increased the demand for computing and storage. However, the slowing down of Moore’s law and the separation between computing and storage units in traditional von Neumann architectures result in the increase of power consumption and time delays in the transport of abundant data, raising more and more challenges for integrated circuit and chip design. It is urgent for us to develop new computing paradigms to meet this challenge. The neuromorphic devices based on the in-memory computing architecture can overcome the traditional von Neumann architecture by Ohm’s law and Kirchhoff’s current law. By adjusting the resistance value of the memristor, the artificial neural network which can mimic the biological brain will be realized, and complex signal processing such as image recognition, pattern classification and decision determining can be carried out. In order to further reduce the size of device and realize the integration of sensing, memory and computing, two-dimensional materials can provide a potential solution due to their ultrathin thickness and rich physical effects. In this paper, we review the physical effects and memristive properties of neuromorphic devices based on two-dimensional materials, and describe the synaptic plasticity of neuromorphic devices based on leaky integrate and fire model and Hodgkin-Huxley model in detail, including long-term synaptic plasticity, short-term synaptic plasticity, spiking-time-dependent plasticity and spiking-rate-dependent plasticity. Moreover, the potential applications of two-dimensional materials based neuromorphic devices in the fields of vision, audition and tactile are introduced. Finally, we summarize the current issues on two-dimensional materials based neuromorphic computing and give the prospects for their future applications.

Research on Two-dimensional MXenes Based Synaptic Devices for the Future In-memory Computing

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

2D Material Based Synaptic Devices for Neuromorphic Computing

High-speed ionic synaptic memory based on two-dimensional titanium carbide MXene

Neuromorphic Visual Artificial Synapse In-Memory Computing Systems Based on GeOx-coated MXene Nanosheets

Advanced synaptic transistor device towards AI application in hardware perspective

MoS2-based Charge-trapping Synaptic Device with Electrical and Optical Modulated Conductance

Electrical-Light Coordinately Modulated Synaptic Memristor Based on Ti 3 C 2 MXene for Near-Infrared Artificial Vision Applications

MXenes for memristive and tactile sensory systems

Electrical Properties and Biological Synaptic Simulation of Ag/MXene/SiO2/Pt RRAM Devices

Bio‐Inspired Photoelectric Artificial Synapse based on Two‐Dimensional Ti 3 C 2 T x MXenes Floating Gate

Bio‐Inspired Photoelectric Artificial Synapse Based on Two‐Dimensional Ti3C2Tx MXenes Floating Gate

Metal Oxide Resistive Random Access Memory Based Synaptic Devices for Brain-Inspired Computing

Engineering the Synaptic Kinetic Process into Memristive Device

Two-terminal Proton Conducting Devices with Synaptic Behavior and Memory

MXene Hybrid Nanocomposites Enable High Performance Memory Devices and Artificial Synapse Applications

Memristor based on α-In2Se3 for emulating biological synaptic plasticity and learning behavior

Brain-Like Optoelectronic Artificial Synapse with Ultralow Energy Consumption Based on MXene Floating-Gate for Emotion Recognition

Research progress of neuromorphic devices based on two-dimensional layered materials

2D-Material-based Volatile and Nonvolatile Memristive Devices for Neuromorphic Computing

Artificial Synaptic Behavior and Its Improvement of RRAM Device with Stacked Solution-Processed MXene Layers