Abstract:The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC) mosfets have the potential to replace Si insulated gate bipolar transistors (IGBTs) in medium-low-voltage and high-power applications. In this paper, a state-of-the-art commercially available 325 A, 1700 V SiC mosfet module has been fully characterized under various load currents, bus voltages, and gate resistors to reveal their switching capability. Meanwhile, Si IGBT modules with similar power ratings are also tested under the same conditions. From the test results, several interesting points have been obtained: different to the Si IGBT module, the over-shoot current of the SiC mosfet module increases linearly with the increase of the load current and it has been explained by a model of the over-shoot current proposed in this paper; the induced negative gate voltage due to the complementary device turn-off (crosstalk effect) is more harmful to the SiC mosfet module than the induced positive gate voltage during turn-on when the gate off-voltage is 6 V; the maximum dvdt and didt (electromagnetic interference) during switching transients of the SiC mosfet module are close to those of the Si IGBT module when the gate resistance is larger than 8 but the switching loss of the SiC mosfet module is much smaller; the switching losses of the Si IGBT module are greater than those of the SiC mosfet module even when the gate resistance of the former is reduced to zero. An accurate power loss model, which is suitable for a three-phase two-level converter based on SiC mosfet modules considering the power loss of the parasitic capacitance, has been presented and verified in this paper. From the model, a 96.2 efficiency can be achieved at the switching frequency of 80kHz and the power of 100 kW.

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6.5Kv Freedm-Pair: Ideal High Power Switch Capitalizing on Si and Sic

Improved 6.5kv FREEMD-Pair Based on SiC JFET and Si IGBT

Gate Driver Design and Continuous Operation of an Improved 1200V/200A FREEDM-Pair Half-Bridge Power Module

Active Gate Driver for Dynamic Current Balancing of Parallel-Connected SiC MOSFETs

15-Kv/40-a FREEDM Supercascode: A Cost-Effective SiC High-Voltage and High-Frequency Power Switch

An SiC MOSFET & Si Diode Hybrid Three-Phase High-Power Three-level Rectifier

Performance comparison of 1200V 100A SiC MOSFET and 1200V 100A silicon IGBT

High Voltage Si/SiC Hybrid Switch: an Ideal Next Step for SiC

Analysis and Flexible DV/DT Control of an Active Clamping Topology for Series-Connected SiC MOSFETs

A Si IGBT/SiC MOSFET Hybrid Isolated Bidirectional DC–DC Converter for Reducing Losses and Costs of DC Solid State Transformer

A Compact Gate Control and Voltage-Balancing Circuit for Series-Connected SiC MOSFETs and Its Application in a DC Breaker

A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

A SiC Asymmetric Cell Trench MOSFET with Split Gate and Integrated p+-polySi/SiC Heterojunction Freewheeling Diode

IGBT Dynamic Loss Reduction Through Device Level Soft Switching

A Low-Loss Diode Integrated SiC Trench MOSFET for Improving Switching Performance

Development of 6kv SiC Hybrid Power Switch Based on 1200V SiC JFET and MOSFET

Performance Comparison of Two Hybrid Si/SiC Device Concepts

A High-Voltage Pulse Modulator Composed of SiC MOSFETs/IGBTs in a Hybrid Connecting State