Silicon Photoelectron Chip Integrated Active Devices Based on Colloidal Quantum Dots(Invited)
Qu Junling,Liu Peng,Gan Xuetao,Zhao Jianlin
DOI: https://doi.org/10.3788/aos241121
2024-01-01
Acta Optica Sinica
Abstract:Significance Silicon photonics combines the high speed and broad bandwidth of optical signals with high-density and low-cost fabrication of the complementary metal oxide semiconductor (CMOS) technology, and it has been an attractive technology for various applications ranging from data centers to biosensing. However, silicon is not capable of building several active optoelectronic devices for fully integrated photonic circuits. For example, the indirect bandgap of silicon makes it challenging to achieve efficient light sources, the absence of the Pockels effect prevents silicon from building highspeed linear electro-optic modulators, and the absorption cutoff wavelength of 1100 nm makes silicon incompatible with telecom-band photodetection. A common strategy to overcome such limitations is the heterogenous/hybrid integration of material technology suitable for active optoelectronic devices, such as the epitaxy growth of germanium for telecom-band photodetectors and wafer-bonding of III-V semiconductors for on-chip lasers and modulators. However, such integration has problems including the lattice mismatch during epitaxy, high cost, low yield of bonding, and optical mode mismatch between different materials. Therefore, it is necessary to develop novel material platforms that can provide high-performance active devices with CMOS-compatible fabrication. In this regard, colloidal quantum dot (CQD) semiconductors featuring excellent optoelectronic properties, low-cost chemical synthesis, and CMOS-compatible solution-based fabrication emerge as a competitive material platform for active devices integrated into silicon photonic chips. Due to their continuously tunable bandgap from UV to THz enabled by the quantum confinement effect, near-unity photoluminescence quantum yield, narrow emission linewidth, and highly tunable carrier transport, the potential applications of the CQD have been demonstrated by the commercialization of CQD-enhanced liquid crystal display by Samsung company and the short-wave infrared camera of SWIR Vision Systems company. Meanwhile, their applications in light-emitting diode display, solar cells, and quantum emitters are extensively researched. In this respect, the 2023 Noble Prize in Chemistry was awarded to Alexei Ekimov, Louis Brus, and Moungi Bawendi for the discovery and development of CQDs. Over the last decade, there have been several studies on CQD active devices integrated into silicon photonic chips, including waveguide-integrated photodetectors, light-emitting diodes, and optically pumped lasers. Thus, it is necessary to provide readers of different academic backgrounds with a full picture of CQD materials, including their synthesis route, thin film fabrication, and optoelectronic properties related to the chip-integrated active devices. Additionally, it is high time to update the latest progress in chip-integrated CQD active devices and discuss the possible route for their future development. Progress First, the colloidal synthesis of CQDs and their solution-based thin film deposition are introduced, with an emphasis on the role of surface organic ligands in governing the solution stability and controlling the optoelectronic properties of CQDs. The optical properties of CQDs related to their integration on silicon photonic chips are then summarized. Specifically, their spectral coverage from UV to THz range is achieved by quantum confinement effect and heterostructure band alignment, and their complex refractive index can be tuned from 1.7 to 2.7 by the CQDs material composition, surface ligand and film deposition strategy (Table 1). Meanwhile, the optical gain characteristics (gain magnitude, gain threshold, and gain lifetime) and their measurement methods (transient absorption and variable stripe length methods) are presented, with the optical gain properties of the most employed CQDs summarized in Table 2. Regarding the electrical properties of CQDs, we introduce ligand exchange processes that provide conductive CQD thin films with by-design doping types and magnitude, which is the core of fabricating high-performance active optoelectronic devices. After introducing the fundamental optoelectrical properties of CQDs, we present the fabrication level and summarize the patterning strategies of CQD thin films including lithography, ink-jet printing, 3D printing writing, and transfer printing, thus demonstrating the feasibility of CQD-based active device integration with silicon. In the next section, we summarize the latest progress in chip-integrated CQD-based photodetectors and light sources. In terms of CQD-based photodetectors, plasmonic-Si hybrid waveguide integrated HgTe CQD-based photoconductor and SiN waveguide integrated PbS CQD-based photodiodes are presented. Additionally, we show their performance including the responsivity, 3 dB bandwidth, and external quantum efficiency in Table 3. Their current limited photodetection performance is attributed to factors such as high dark current from a photoconductive configuration, low carrier mobility from solid-state ligand exchange, and photocurrent saturation due to the evanescent coupling between the photodetector and the waveguide. Regarding the chip-integrated CQD-based light sources, the electrically pumped light-emitting diode has poor outcoupling efficiency of below 1% due to a lack of emission directionality. On the other hand, waveguide-coupled CQD-based lasers have attracted more research interest. We summarize the structure and performance of these lasers in Table 4 and present their developments in detail by dividing them into additive and substrative manufacturing categories. For additive manufacturing, the self-assembled supraparticle and microring resonator lasers made of CQDs are demonstrated and outcoupled by waveguides. We also present template-assisted CQD microring lasers with predefined patterns, with higher flexibility and controllability shown. Plasmonic waveguide integrated CQD lasers are also developed to demonstrate coherent output sources at sub-diffractive scale. Meanwhile, with a fully CMOS compatible fabrication process, subtractive manufacturing of a sandwich-structured SiN/ CQD/SiN thin film has been developed by the van Thourhout group from Gent University, with successful demonstrations of low-threshold picosecond laser pumped microdisk lasers and quasi-continuous-wave pumped diffracted feedback lasers. Conclusions and Prospects With the advances in synthesis, device physics, and CMOS compatible thin film fabrication of CQDs, their integration with silicon photonic chips is drawing increasing attention. We expect that the advantages of CQDs can be better leveraged in the direction of long-wavelength infrared photodetectors, and more interestingly, the electrically pumped on-chip lasers that are in high demand in current silicon-based optoelectronic technology. The development of electrically pumped on-chip CQD lasers will rely on the invention of novel CQD materials with better optical gain properties, the rational design of electrical and optical structures, and their extension to infrared wavelength.