Abstract:The applications of thin-film transistors (TFTs) based on oxide semiconductors are limited due to instability under negative bias illumination stress (NBIS). Here, we report TFTs based on solution-processed In2O3 semiconductors doped with Pr4+ or Tb4+, which can effectively improve the NBIS stability. The differences between the Pr4+-doped In2O3 (Pr:In2O3) and Tb4+-doped In2O3 (Tb:In2O3) are investigated in detail. The undoped In2O3 TFTs with different annealing temperatures exhibit poor NBIS stability with serious turn-on voltage shift (ΔVon). After doping with Pr4+/Tb4+, the TFTs show greatly improved NBIS stability. As the annealing temperature increases, the Pr:In2O3 TFTs have poorer NBIS stability (ΔVon are −3.2, −4.8, and −4.8 V for annealing temperature of 300, 350, and 400 °C, respectively), while the Tb:In2O3 TFTs have better NBIS stability (ΔVon are −3.6, −3.6, and −1.2 V for annealing temperature of 300, 350, and 400 °C, respectively). Further studies reveal that the improvement of the NBIS stability of the Pr4+/Tb4+:In2O3 TFTs is attributed to the absorption of the illuminated light by the Pr/Tb4fn—O2p6 to Pr/Tb 4fn+1—O2p5 charge transfer (CT) transition and downconversion of the light to nonradiative transition with a relatively short relaxation time compared to the ionization process of the oxygen vacancies. The higher NBIS stability of Tb:In2O3 TFTs compared to Pr:In2O3 TFTs is ascribed to the smaller ion radius of Tb4+ and the lower energy level of Tb 4f7 with a isotropic half-full configuration compared to that of Pr 4f1, which would make it easier for the Tb4+ to absorb the visible light than the Pr4+.

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The Mechanism of the Photostability Enhancement of Thin-Film Transistors Based on Solution-Processed Oxide Semiconductors Doped with Tetravalent Lanthanides

The Effect of the Charge Transfer Transition of the Tetravalent Terbium on the Photostability of Oxide Thin‐Film Transistors

Effects of Rare-Earth Element Dopants in High-Mobility InO X -Based Thin-Film Transistors

Enhanced NBIS Stability of Oxide Thin-Film Transistors by Using Terbium-Incorporated Alumina

Effect of Bandgap Widening on Negative-Bias Illumination Stress Stability of Oxide Thin-Film Transistors

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Enhanced Negative‐Bias Illumination Temperature Stability of Praseodymium‐Doped InGaO Thin‐Film Transistors

Enhanced Stability under Positive Bias Temperature Stress of Ln-Doped Inzno Thin Film Transistors Fabricated with a Back-Channel-Etch Structure

Effect of Indium Doping on Bias Stability in Dual-Target Co-Sputtering InZnSnO Thin-Film Transistors

A study on the high mobility and improved reliability of Pr-doped indium zinc oxide thin film transistors

Enhanced Stability and Mobility of Solution-Processed Oxide Thin-Film Transistors with Bilayer Terbium-Incorporated Indium Oxide Channel

Heterojunction Channel Engineering for Enhanced Mobility and Stability of Solution-Processed Holmium-Doped Indium Oxide Thin Film Transistors

Solution-processed High-Mobility Neodymium-Substituted Indium Oxide Thin-Film Transistors Formed by Facile Patterning Based on Aqueous Precursors

Trap-Assisted Enhanced Bias Illumination Stability of Oxide Thin Film Transistor by Praseodymium Doping

Gate bias stress stability under light irradiation for indium zinc oxide thin-film transistors based on anodic aluminium oxide gate dielectrics

P‐1.9: Enhanced Stability Under Positive Bias Temperature Stress of Ln‐Doped InZnO Thin Film Transistors Fabricated with Back‐channel‐etch Structure

P‐5.2: Aqueous Sr‐doped In2O3 TFT Stability under Negative Bias Illumination Stress

High-performance CdScInO Thin-Film Transistors and Their Stability Improvement under Negative Bias (illumination) Temperature Stress

Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

Self-Compensation Effect of Photo-Bias Instabilities in a-InGaZnO Thin-Film Transistors Induced by Unique Ion Migration