Abstract:One of the key challenges to realize a fully integrated transceiver using silicon based processes is the limited output power achievable, especially at millimeter-wave frequencies. Higher output power can be obtained by using various power combining schemes, which typically sum the output power of N identical amplifying stages coherently. Thus to ensure efficient power combining, the input signal must be distributed to all the amplifying stages on the chip with equi-phase and equi-magnitude. While Wilkinson power splitter has been employed for this purpose in the literatures, it becomes bulky and inefficient when N is large, which severely limits the number of outputs that can be combined.In this paper, a network of coupled lambda/2 standing-wave oscillators is employed to distribute the input signal. Proposed formerly for global clock distribution, theoretically, differential signals of equi-frequency, equi-phase, and equi-magnitude can be obtained by taping onto specific points in the network. It should be noted, however, that the network is especially suited for input signal distribution purpose here, since the specific power combining scheme assumes that a grid of N amplifying stages resides on the chip, which matches to the tap points in a perfect way.A 30 GHz prototype network comprised of four coupled lambda/2 standing-wave oscillators using TSMC 0.18 mu m CMOS process has been design. Post-layout simulation results are presented showing that no distinguishable difference in frequency, phase, and amplitude is observed for the multiple output differential signals. The chip has a total area (including pads) of 800 x 990 mu m(2) and has been submitted for fabrication.

Analysis of Oscillation-Starting Characteristics in Millimeter Wave Extended Interaction Oscillators

Modeling, Optimization and Control of Rotary Traveling-Wave Oscillator

Input Signal Distribution Using Coupled Lambda/2 Standing-Wave Oscillators For Coherent Power Combining

A 60GHz voltage-controlled oscillator with a 3.6GHz tuning range in 180nm CMOS technology

A 3 Mw 54 GHz 0.18 Μm BiCMOS Voltage Controlled Oscillator with Supply Injection Locking

Power Enhancement of Subterahertz Extended Interaction Oscillator Based on Overmoded Multigap Circuit and Linearly Distributed Two Electron Beams

A K-Band CMOS Standing Wave Oscillator Using Digital-Controlled Artificial Dielectric Differential Transmission Lines

A Bridged Contactless Measurement Technique for LC Tank Based Voltage-Controlled Oscillator.

A Reliability-Oriented Startup Analysis of Injection-Locked Frequency Divider Based on Broken Symmetry Theory

Power Enhancement of 0.22-THz Extended Interaction Oscillator Based on Orthogonal Interconnection Structure With Output Coupler

Research on a Highly Overmoded Slow Wave Circuit for 0.3-THz Extended Interaction Oscillator

Performance and Experimental Progress of a Compact W-band High Average Power Sheet Beam Extended Interaction Oscillator

Research of a 0.14 THz Dual-Cavity Parallel Structure Extended Interaction Oscillator

Three-dimensional Particle-in-cell Simulation of Terahertz Extended Interaction Oscillator

Experimental analysis of wide-spectrum oscillator with nonmatched transmission line

Research of the Oscillation Start-Up Time in an Extended Interaction Oscillator Driven by a Pseudospark-Sourced Sheet Electron Beam

Tractable Resonant Circuit With Two Nonuniform Beams for a High-Power 0.22-THz Extended Interaction Oscillator

Study of a 0.34-THz Ladder-Type Extended Interaction Klystron With Narrow Coupling Cavities

Analysis of Ohmic Loss Due to Non-Ideal Boundary in Relativistic Backward Wave Oscillator

Novel E-Shaped Waveguide Relativistic Extended Interaction Oscillator With Low Magnetic Field Operation

Study on the Increased Threshold Current in the Development of 220-Ghz Folded Waveguide Backward-Wave Oscillator