A Fractional Drift Diffusion Model for Organic Semiconductor Devices

Yi Yang,Robert A. Nawrocki,Richard M. Voyles,Haiyan H. Zhang

DOI: https://doi.org/10.32604/cmc.2021.017439

2021-01-01

Abstract:: Because charge carriers of many organic semiconductors (OSCs) exhibit fractional drift diffusion (Fr-DD) transport properties, the need to develop a Fr-DD model solver becomes more apparent. However, the current research on solving the governing equations of the Fr-DD model is practically nonexistent. In this paper, an iterative solver with high precision is developed to solve both the transient and steady-state Fr-DD model for organic semiconductor devices. The Fr-DD model is composed of two fractional-order carriers (i.e., electrons and holes) continuity equations coupled with Poisson’s equation. By treating the current density as constants within each pair of consecutive grid nodes, a linear Caputo’s fractional-order ordinary differential equation (FrODE) can be produced, and its analytic solution gives an approximation to the carrier concentration. The convergence of the solver is guaranteed by implementing a successive over-relaxation (SOR) mechanism on each loop of Gummel’s iteration. Based on our derivations, it can be shown that the Scharfetter–Gummel discretization method is essentially a special case of our scheme. In addition, the consistency and convergence of the two core algorithms are proved, with three numerical examples designed to demonstrate the accuracy and computational performance of this solver. Finally, we validate the Fr-DD model for a steady-state organic field effect transistor (OFET) by fitting the simulated transconductance and output curves to the experimental data. This work aimed to develop a Fr-DD model solver for simulating the anomalous dynamics of OSC devices. Two algorithms based on a novel discretization scheme and successively over-relaxed Gummel’s iteration are proposed here to solve the transient and steady-state Fr-DD model equations. This study has identified the consistency of the two algorithms by showing that the truncation error from the discretized divergence of current density functions will vanish with the spatial step size to a positive fractional order of 1 − β . The convergence analysis reveals that the Gummel mapping is a contraction mapping if we consider the successive over-relaxation mechanism in the Gummel’s iteration, which thus completes the proof of convergence. Three numerical examples, including one benchmark example and two others constructed from the perspective of engineering applications are employed to demonstrate the algorithms’ accuracy and computational performance. It is found in the first example that altering α and β can impact the spatial convergence order but only varying α will affect the convergence order in time. The increase rate of CPU time is less than the shrinking rate of temporal step size and lower than the growth rate of spatial grid points. These findings suggest that our solver has high precision and fast computational speed as it limits the computational error to a predefined satisfactory level (from ∼ 10 − 4 to ∼ 10 − 6 ) at a relatively small expense of CPU time (from ∼ 20 s to ∼ 100 s). The results reported in two numerical examples reveal the prediction and characterization of the transient-state and steady-state dynamics for any type of organic semiconductor device. Finally, we provide experimental verification for the fractional drift diffusion model of a DNTT-OFET. We stipulate that this is the first to date exploration of the Fr-DD model solver laying the groundwork for future research into fractional drift diffusion modeling of flexible organic electronics.