Abstract:Recent quantum Hall experiments conducted on disordered graphene pn junction provide evidence that the junction resistance could be described by a simple Ohmic sum of the n and p mediums' resistances. However in the ballistic limit, theory predicts the existence of chirality-dependent quantum Hall plateaus in a pn junction. We show that two distinctively separate processes are required for this ballistic-Ohmic plateau transition, namely (i) hole/electron Landau states equilibration and (ii) valley iso-spin dilution of the incident Landau edge state. These conclusions are obtained by a simple scattering theory argument, and confirmed numerically by performing ensembles of quantum magneto-transport calculations on a 0.1um-wide disordered graphene pn junction within the tight-binding model. The former process is achieved by pn interface roughness, where a pn interface disorder with a root-mean-square roughness of 10nm was found to suffice under typical experimental conditions. The latter process is mediated by extrinsic edge roughness for an armchair edge ribbon and by intrinsic localized intervalley scattering centers at the edge of the pn interface for a zigzag ribbon. In light of these results, we also examine why higher Ohmic type plateaus are less likely to be observable in experiments.

Ballistic Rectification in A Z-Shaped Graphene Nanoribbon Junction

Electronic transport through zigzag/armchair graphene nanoribbon heterojunctions.

Electronic Transport in Z-Shaped Graphene-Nanoribbons:Shape and Size Effects

Molecular Rectification in Triangularly Shaped Graphene Nanoribbons.

Design of graphene-nanoribbon heterojunctions from first principles

Rectification with Controllable Directions in Sulfur-Doped Armchair Graphene Nanoribbon Heterojunctions

Rectification Inversion in Oxygen Substituted Graphyne-Graphene-Based Heterojunctions

Controllable Unzipping for Intramolecular Junctions of Graphene Nanoribbons and Single-Walled Carbon Nanotubes

Z-Shaped Graphene Nanoribbon Quantum Dot Device

Spontaneous Edge-Defect Formation And Defect-Induced Conductance Suppression In Graphene Nanoribbons

Elementary Building Blocks of Graphene-Nanoribbon-Based Electronic Devices

Quantum Dot in Z-shaped Graphene Nanoribbon

Orbital Symmetry Induced Conductance Switching in a Graphene Nanoribbon Heterojunction with Different Edge Hydrogenations

Quantum Dot Based On Z-Shaped Graphene Nanoribbon: First-Principles Study

Family-Dependent Rectification Characteristics in Ultra-Short Graphene Nanoribbon P–n Junctions

Rectification Induced In N-2(Aa)-Doped Armchair Graphene Nanoribbon Device

One-Dimensional Magnetic Conduction Channels across Zigzag Graphene Nanoribbon/Hexagonal Boron Nitride Heterojunctions

Electron Optics with P-N Junctions in Ballistic Graphene

Ballistic-Ohmic quantum Hall plateau transition in graphene pn junction

Thermal Conduction and Rectification in Few-Layer Graphene Y Junctions