Electro-Optical Co-Design of Power-Efficient 100-Gbps/λ PAM-4 VCSEL Transmitter

Chenyu Liang,Wenjia Zhang,Zuyuan He

2019-01-01

Abstract:We present a comprehensive electro-optical co-design framework for power-efficient 100-Gbps PAM-4 VCSEL transmitter. The driver circuit design and energy efficiency of transmitter are analyzed and compared for two 20-GHz class VCSELs with different damping factors.

What problem does this paper attempt to address?

Optimization of PAM-4 transmitters based on lumped silicon photonic MZMs for high-speed short-reach optical links

Shiyu Zhou,Hsin-Ta Wu,Khosrov Sadeghipour,Carmelo Scarcella,Cormac Eason,Marc Rensing,Mark J Power,Cleitus Antony,Peter O'Brien,Paul D Townsend,Peter Ossieur

DOI: https://doi.org/10.1364/OE.25.004312

2017-02-20

Abstract:We demonstrate how to optimize the performance of PAM-4 transmitters based on lumped Silicon Photonic Mach-Zehnder Modulators (MZMs) for short-reach optical links. Firstly, we analyze the trade-off that occurs between extinction ratio and modulation loss when driving an MZM with a voltage swing less than the MZM's Vπ. This is important when driver circuits are realized in deep submicron CMOS process nodes. Next, a driving scheme based upon a switched capacitor approach is proposed to maximize the achievable bandwidth of the combined lumped MZM and CMOS driver chip. This scheme allows the use of lumped MZM for high speed optical links with reduced RF driver power consumption compared to the conventional approach of driving MZMs (with transmission line based electrodes) with a power amplifier. This is critical for upcoming short-reach link standards such as 400Gb/s 802.3 Ethernet. The driver chip was fabricated using a 65nm CMOS technology and flip-chipped on top of the Silicon Photonic chip (fabricated using IMEC's ISIPP25G technology) that contains the MZM. Open eyes with 4dB extinction ratio for a 36Gb/s (18Gbaud) PAM-4 signal are experimentally demonstrated. The electronic driver chip has a core area of only 0.11mm2 and consumes 236mW from 1.2V and 2.4V supply voltages. This corresponds to an energy efficiency of 6.55pJ/bit including Gray encoder and retiming, or 5.37pJ/bit for the driver circuit only.
A 50gb/s Low Power PAM4 SerDes Transmitter with 4-Tap FFE and High Linearity Output Voltage in 65nm CMOS Technology

Fangxu Lv,Xuqiang Zheng,Ziqiang Wang,Jianye Wang,Fule Li

DOI: https://doi.org/10.1109/asicon.2015.7516921

2015-01-01

Abstract:This paper presents a 50Gb/s low power PAM4 transmitter with 4-tap FFE and high linearity output voltage. By employing a low voltage cascode current mirror under the output driver, the nonlinearity between the high and low bit output current is reduced. In addition, the output Vpp reaches 1V. Replacing the hungry CML latch by the transmission gate and realizing the data delay for pre-emphasis at former stage, the consumption of the transmitter is reduced at this high rate. Simulation result shows that, the four-level-signal has clear eye diagram when passing through a channel model with 14.3dB attenuation at 12.5GHz. The output has minimum vertical eye opening of 119mVpp and minimum horizontal eye width of 21ps (0.52UI). The active chip area of the whole transceiver is 0.61mm × 0.92mm. Performed in 65 nm CMOS technology, the transmitter running at 50Gb/s consumes 66mW power under 1.2 V supply.
An integrated CMOS–silicon photonics transmitter with a 112 gigabaud transmission and picojoule per bit energy efficiency

Ke Li,David J. Thomson,Shenghao Liu,Weiwei Zhang,Wei Cao,Callum G. Littlejohns,Xingzhao Yan,Martin Ebert,Mehdi Banakar,Dehn Tran,Fanfan Meng,Han Du,Graham T. Reed

DOI: https://doi.org/10.1038/s41928-023-01048-1

IF: 33.255

2023-10-23

Nature Electronics

Abstract:Abstract The widening application of advanced digital infrastructure requires the development of communications technologies with increased data transmission rates. However, ensuring that this can be achieved in an energy-efficient way is challenging. Here we report an integrated complementary metal–oxide–semiconductor/silicon-photonics-based transmitter in which a switching current is applied to the passive-equalization-network-guided silicon Mach–Zehnder modulator, rather than driving a standard Mach–Zehnder modulator with a traditional voltage swing. This approach allows the total electrical energy to be selectively distributed to different frequency components by choosing an appropriate inductance and near-end termination impedance values. With the approach, we achieve 112 gigabaud—112 gigabits per second on–off keying and 224 gigabit per second pulse-amplitude modulation with four levels—transmission with energy efficiencies below picojoules per bit, and without the need for signal-shaping functions in the data source. We also investigate the bit error rate for different electrical and optical power conditions at 100 gigabaud, including the electrical power consumption of the driver amplifier.

engineering, electrical & electronic
Spectral Efficiency and Energy Efficiency of Pulse-Amplitude Modulation Using 1.3 μm Wafer-Fusion VCSELs for Optical Interconnects

Philip Wolf,Hui Li,Andrei Caliman,Alexandru Mereuta,Vladimir Iakovlev,Alexei Sirbu,Elyahou Kapon,Dieter Bimberg

DOI: https://doi.org/10.1021/acsphotonics.7b00403

IF: 7

2017-08-01

ACS Photonics

Abstract:We compare the modulation efficiency of on–off keying (OOK) and four-level pulse-amplitude modulation (PAM4) using 1.3 μm wafer-fusion vertical-cavity surface-emitting lasers (VCSELs) for single-channel short-reach optical interconnects. O-band wafer-fusion VCSELs combine high optical gain from InP-based active regions with high-reflectivity, low-absorption, and high-thermal-conductive GaAs-based distributed Bragg reflectors. VCSELs offer a low-cost and low-power-consuming light source for optical interconnects in data centers and fiber-based local-area networks, presenting an attractive alternative to common edge-emitting lasers. Our investigation focuses on the highest error-free bit rates and energy efficiency of OOK and PAM4 signaling. We achieved an error-free bit rate of 38 Gbit/s with PAM4 for devices having a small-signal bandwidth of 9.9 GHz, presenting a spectral efficiency of 3.8 bit/s/Hz. These PAM4 values offer an improved error-free bit rate of 26% and consume 32% less energy-per-bit when compared to OOK.

physics, condensed matter,optics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
A Novel 40-Gb/s PAM4 Transmitter with Power-Efficient Pre-Emphasis

Yang Wang,Weixin Gai,Liangxiao Tang

DOI: https://doi.org/10.1109/icsict.2014.7021357

2014-01-01

Abstract:This paper presents a 65-nm CMOS 40-Gb/s PAM4 transmitter with power-efficient pre-emphasis. Switchable current sources are used in the pre-emphasis tap to eliminate power wasting. The pre-emphasis tap only injects current to the output nodes upon the voltage level transition of the output signal. Current does not flow through the pre-emphasis tap when there is no transition. Simulation results show that with insertion loss of the channel being 20.2 dB at 20 GHz, an eye height of 120 mV and an eye width of 30 ps are achieved. The driver consumes only 18.3 mW, which is equivalent to 0.46-pJ/b.
Silicon Photonic Micro-Ring Modulator-based 4 x 112 Gb/s O-band WDM Transmitter with Ring Photocurrent-based Thermal Control in 28nm CMOS

Z. Xuan,J. Sharma,Chun-Ming Hsu,P. Liao,Ranjeet Kumar,M. Sakib,Hao Li,H. Rong,J. Jaussi,G. Balamurugan

2021-06-13

Abstract:We present a 4λ×112 Gb/s/λ hybrid-integrated silicon photonic TX suitable for 400G Ethernet modules and co-packaged optics. The photonic IC (PIC) uses cascaded micro-ring modulators (MRMs) with integrated heaters for efficient wavelength division multiplexing (WDM). The 28nm CMOS electronic IC includes PAM4 MRM drivers with nonlinear FFE and control circuits to stabilize MRM performance against process and temperature variations. A thermal control scheme based on sensing MRM photocurrents is used to minimize monitoring hardware in the PIC. Measured results demonstrate 112 Gb/s PAM4 operation with <0.7 dB TDECQ from each of the 4 channels. To our best knowledge, this is the highest per-λ data rate reported for an O-band ring-based WDM transmitter.

Physics,Engineering
A 50-Gb/s PAM-4 Silicon-Photonic Transmitter Incorporating Lumped-Segment MZM, Distributed CMOS Driver, and Integrated CDR

Qiwen Liao,Yuguang Zhang,Siyuan Ma,Lei Wang,Leliang Li,Guike Li,Zhao Zhang,Jian Liu,Nanjian Wu,Liyuan Liu,Yong Chen,Xi Xiao,Nan Qi

DOI: https://doi.org/10.1109/jssc.2021.3134874

2022-03-01

Abstract:This article presents a 50-Gb/s optical transmitter (TX), consisting of a 40-nm distributed CMOS driver and a 180-nm silicon-photonic modulator. A lumped-segment Mach–Zehnder modulator (LS-MZM) is developed for high bandwidth (BW) four-level pulse amplitude (PAM-4) modulation. A multi-segment driver with limiting outputs is co-designed, which is distributed into each LS-MZM segment. By grouping these LS-MSM segments in a thermometer code, high-linearity modulation is realized without the need of power-hungry high-swing linear drivers. To improve the optical PAM-4 signal integrity, in-segment multiplexing along with clock phase interpolation is adopted to synchronize the electrical and optical signals across all segments. The hybrid coupling between the driver and modulator is devised to boost the BW of the high-speed data path, while a half-rate clock and data recovery (CDR) circuit is integrated to remove the accumulated jitter. Measurements show that the TX exhibits an extinction ratio (ER) of up to 9.8 dB and a 0.99 ratio of the level mismatch. A figure-of-merit (FoM) of 1.39 pJ/bit/dB corresponds to a 682-mW power, which can be further reduced by 40%, at the cost of a degraded ER of 4 dB. The PAM-4 CDR helps to achieve $< 10^{-12}$ BER and >0.1-$\text{U}I_{\mathrm {pp}}$ jitter tolerance (JTOL) from 10 to 100 MHz.

engineering, electrical & electronic
A 44 Gbps PAM-4 Transmitter with Resistance Feedback 4:1 MUX in 65nm CMOS

Ziqiang Wang,Dengjie Wang,Xin Wu,Jiawei Wang,Hao Xu,Chun Zhang,Hong Chen,Zhihua Wang

DOI: https://doi.org/10.1109/icsict55466.2022.9963444

2022-01-01

Abstract:This paper presents a power-efficient four-level pulse amplitude modulation (PAM-4) transmitter with 4-tap feed-forward equalizer (FFE) SST driver. A resistance feedback 4:1 MUX is proposed to overcome the bandwidth limit in the last MUX node. The bandwidth is improved more than twice and the jitter is reduced from 7.07ps to 381fs. An absolute delay-based clock distribution network is designed to ensure the timing of the 4:1 MUX. The PAM-4 transmitter is fabricated in 65nm CMOS process and occupies 1.53mm×1.35mm. It delivers a 1.2Vppd PAM-4 signal with RLM of 99% under 1.2V supply and achieves an energy efficiency of 2.27pJ/bit at 44Gbps.
4&Amp;#x00d7;30 Gbps 155mw/channel VCSEL Driver in 65nm CMOS

Sheng Wang,Nan Qi,Zhongkai Wang,Jing Wang,Hui Guo,Rui Bai,Zhiliang Hong,Patrick Yin Chiang

DOI: https://doi.org/10.1109/oic.2015.7115711

2015-01-01

Abstract:We present a 4-channel VCSEL driver that incorporates input CTLE and 1-tap output FFE. Designed in a standard 65nm-CMOS process, 30Gbps operation is achieved with 155mW/channel (77mW/channel for FFE) from a 1.2/3.0V supply.
Single-channel 106.25 Gb/s PAM-4 and 64 Gb/s NRZ transmission with a 33.4-GHz 850-nm VCSEL with low-RIN characteristics

Yun-Cheng Yang,Hao-Tien Cheng,Chao-Hsin Wu

DOI: https://doi.org/10.1109/jlt.2023.3306077

IF: 4.7

2023-01-01

Journal of Lightwave Technology

Abstract:We report on a high-performance oxide-confined 850-nm vertical-cavity surface-emitting laser (VCSEL) believed to have the highest modulation bandwidth at low bias currents for datacenter applications. This paper has extensively discussed the device's characteristics, including static performance, optical spectra, small-signal response, relative intensity noise (RIN), and large-signal performance. The VCSEL with an oxide aperture of 4 μm delivers a 3.7 mW optical power, low spectral width, below -150 dB/Hz VCSEL RIN, and a breakthrough 33.4 GHz frequency response at room temperature (25 $^{\circ }$C). Designed for high-performance short-reach communication networks and telecommunication applications, this high-speed 850-nm VCSEL supports data rates of up to 64 Gb/s non-return-to-zero (NRZ) and 106.25 Gb/s (53.125 Gbaud) 4-level pulse amplitude modulation (PAM-4) in multi-mode fiber (MMF) without the need for feedforward equalization (FFE), decision feedback equalizer (DFE), or any offline digital signal processing (DSP).

engineering, electrical & electronic,optics,telecommunications
Electro-absorption Modulated 53 Gbps Widely Tunable Laser Based on Half-Wave V-coupled Cavities

Zhongwen Wang,Jianjun Meng,Qi Chen,Qiaoli Li,Junqiang Zhu,Jiasheng Zhao,Jian-jun He

DOI: https://doi.org/10.1364/ol.524830

IF: 3.6

2024-01-01

Optics Letters

Abstract:In this paper, a 53 Gbps widely tunable transmitter is experimentally demonstrated for the first time, to our knowledge. An InGaAlAs/InP multiple-quantum-well (MQW) wafer is used with an identical layer structure for both the V-coupled cavity laser (VCL) and the electro-absorption modulator (EAM). The VCL uses a shallow-etched waveguide to reduce loss, while the EAM uses a deep-etched waveguide to increase the 3-dB modulation bandwidth. With the temperature varying from 19.5 to 30 degrees C, the transmitter achieves wavelength tuning of 42 channels with a spacing of 100 GHz, corresponding to a tuning range of 32.6 nm from 1538.94 to 1571.54 nm. The static extinction ratio (ER) for all channels is higher than 14 dB. The measured 3-dB electro-optic (E0) bandwidth of the transmitter is over 40 GHz, which fits well with the calculated 3-dB bandwidth. At a fixed peak-to-peak driving voltage of 2.4 V, all channels exhibit clearly an open eye diagram with a 53 Gbps non-return-to-zero (NRZ) signal, while the dynamic ER is higher than 4.5 dB. (c) 2024 Optica Publishing Group
8×250 Gbit/s PAM4 Transmission over 1 Km Single Mode Fiber with an All-Silicon LAN WDM Transmitter.

Penghui Xia,Zhongya Li,Nanan Ning,Qiang Zhang,Xiaoqing Jiang,Jianyi Yang,Junwen Zhang,Hui Yu

DOI: https://doi.org/10.1364/ofc.2023.tu3i.6

2023-01-01

Abstract:We demonstrate 2 Tbit/s (8×250 Gbit/s) and 1.6 Tbit/s (8×200 Gbit/s) 4-level pulse amplitude modulation (PAM4) transmissions over 1 km and 10 km single mode fibers (SMF) with an all-silicon wavelength division multiplexing transmitter chip.
A 32gb/s 133mw PAM-4 Transceiver with DFE Based on Adaptive Clock Phase and Threshold Voltage in 65nm CMOS.

Liangxiao Tang,Weixin Gai,Linqi Shi,Xiao Xiang,Kai Sheng,Ai He

DOI: https://doi.org/10.1109/isscc.2018.8310210

2018-01-01

Abstract:With the proliferation of the Internet of Things and mobile computing, network speed is accelerating to support data-rich services. This drives the explosion of bandwidth requirement on backplane interconnects while channel length and power efficiency remain intact. This paper presents a 32Gb/s PAM-4 transceiver fabricated in a 65nm CMOS process. It achieves a BER<;10 -12 through 23dB channel loss at 8GHz while consuming 133mW of power.
High-Speed PAM4-Based Optical SDM Interconnects with Directly Modulated Long-Wavelength VCSEL

Joris Van Kerrebrouck,Xiaodan Pang,Oskars Ozolins,Rui Lin,Aleksejs Udalcovs,Lu Zhang,Haolin Li,Silvia Spiga,Markus-Christian Amann,Lin Gan,Ming Tang,Songnian Fu,Richard Schatz,Gunnar Jacobsen,Sergei Popov,Deming Liu,Weijun Tong,Guy Torfs,Johan Bauwelinck,Jiajia Chen,Xin Yin

DOI: https://doi.org/10.1109/jlt.2018.2875538

IF: 4.7

2019-01-01

Journal of Lightwave Technology

Abstract:This paper reports the demonstration of high-speed PAM-4 transmission using a 1.5-mu m single-mode vertical cavity surface emitting laser (SM-VCSEL) over multicore fiber with 7 cores over different distances. We have successfully generated up to 70 Gbaud 4-level pulse amplitude modulation (PAM-4) signals with a VCSEL in optical back-to-back, and transmitted 50 Gbaud PAM-4 signals over both 1-km dispersion-uncompensated and 10-km dispersion-compensated in each core, enabling a total data throughput of 700 Gbps over the 7-core fiber. Moreover, 56 Gbaud PAM-4 over 1-km have also been shown, whereby unfortunately not all cores provide the required 3.8 x 10(-3) bit error rate (BER) for the 7% overhead-hard decision forward error correction (7% OH-HDFEC). The limited bandwidth of the VCSEL and the adverse chromatic dispersion of the fiber are suppressed with preequalization based on accurate end-to-end channel characterizations. With a digital postequalization, BER performance below the 7% OH-HDFEC limit is achieved over all cores. The demonstrated results show a great potential to realize high-capacity and compact short-reach optical interconnects for data centers.
25 Gb/s VCSEL Driver with Pulse Equalization Technique

Juncheng Wang,Li Sun,Zhongkai Wang,Nan Qi,Patrick Yin Chiang,Zhiliang Hong

DOI: https://doi.org/10.1109/oic.2014.6886068

2014-01-01

Abstract:We present a VCSEL driver that incorporates both pre-emphasis and pulse equalization. Designed in a standard 65nm-CMOS process, the measured VCSEL driver achieves a 25Gbps electrical eye and 20Gbps optical eye with 71mW power consumption (without pre-emphasis) from a 1.2V supply.
A 4×112 Gb/s PAM-4 Silicon-Photonic Transmitter and Receiver Chipsets for Linear-Drive Co-Packaged Optics

Han Liu,Zhihan Zhang,Ye Liu,Daigao Chen,Donglai Lu,Jian He,Guike Li,Min Liu,Ziyue Dang,Xi Xiao,Nan Qi

DOI: https://doi.org/10.1109/jssc.2024.3435378

IF: 5.4

2024-09-28

IEEE Journal of Solid-State Circuits

Abstract:A Gb/s hybrid-integrated silicon photonic (SiPh) transmitter and receiver chipsets are presented for the linear-drive co-packaged optics (CPO). A quad-channel open-collector (OC) driver is co-designed with the arrayed traveling-wave (TW) Mach-Zehnder modulator (MZM) for high bandwidth (BW) and high efficiency. A second-order hybrid passive-active continuous-time linear equalizer (CTLE) is proposed to compensate for the nonlinear channel loss up to 12 dB. A linear trans-impedance amplifier (TIA) is proposed with a T- input network and cascaded embedded CTLE, which boosts the BW while maintaining a flat in-band frequency response. Implemented in 180-nm SiGe BiCMOS, the driver and TIA are measured with over 35-GHz BW. The complete SiPh TRX is built by co-packaging both the driver with MZM and TIA with photodetector (PD). Experimental results show 112-Gb/s PAM-4 eyes of both the E-to-O modulation and O-to-E reception. The OTX achieves a 5-dB optical extinction ratio (ER) and 4.8-pJ/bit power efficiency, while the ORX achieves 67-dB trans-impedance and 2.95-pJ/bit power efficiency. To emulate CPO application, a compact-size evaluation board (EVB) is made, and four-channel tests are completed.

engineering, electrical & electronic
Optimized Photonic-Electronic Co-Design for Hybrid Integrated Silicon-Based Optical Transmitters

Daofa Wang,Ye Jin,Han Liu,Yingjie Ma,Ang Li,Yujun Xie,Menghan Yang,Guike Li,Yang Qu,Peng Wang,Ye Xiao,Jinping Guo,Rui Yang,Wei Li,Nan Qi,Ming Li

DOI: https://doi.org/10.1109/lpt.2024.3496088

IF: 2.6

2024-11-25

IEEE Photonics Technology Letters

Abstract:The increasing demand for high-speed and energy-efficient data transmission in global communication networks has driven the development of advanced optical interconnect technologies. This work explores the integration of an optical transmitter utilizing silicon photonic Mach-Zehnder modulators (MZMs) and drivers through a wire-bonding package. Fabricated on a silicon-on-insulator (SOI) platform, the MZMs leverage a single-drive series push-pull design to achieve high-speed modulation up to 112 Gbps and a 37 GHz bandwidth at a 3 V reverse DC bias, along with a modulation efficiency of 2.16 V cm. The transmitter architecture incorporates a four-channel driver array, and experimental results demonstrate a bandwidth of 46 GHz with the capability to deliver a total data rate beyond 200 Gbps. An optimized photonic-electronic co-design on optoelectronic chips holds the promise of facilitating higher data transmission rates.

engineering, electrical & electronic,optics,physics, applied
A 4–40 Gb/s PAM4 Transmitter with Output Linearity Optimization in 65 Nm CMOS

Xuqiang Zheng,Chun Zhang,Fangxu Lv,Feng Zhao,Shigang Yue,Ziqiang Wang,Fule Li,Hanjun Jiang,Zhihua Wang

DOI: https://doi.org/10.1109/cicc.2017.7993640

2017-01-01

Abstract:This paper presents a 4-40 Gb/s current mode PAM4 transmitter with an optimized eye linearity. By embedding an additional mixed combiner and an extra current source into the output driver and developing a coherent scaled-replica based bias generator, the channel-length modulation caused tail-current variations for both DC and AC coupling modes can be effectively compensated. Implemented in 65 nm CMOS, the transmitter occupies an area of 1.02 mm(2) and consumes 102 mW at 40 Gb/s. After applying the proposed linearity optimization, the measured eye linearity can be optimized from 1.28 to 1.01 with a single-end swing of 480 mV in AC coupling mode.
Power-Efficient O-Band 40 Gbit/s PAM4 Transmitter Based on Dual-Drive Cascaded Carrier-Depletion and Carrier-Injection Silicon Mach-Zehnder Modulator with Binary Driving Electronics at CMOS Voltages

Guo-Wei Lu,Hong-Bo Zhang,Satoshi Shinada,Jianxun Hong,Yongpeng Cheng,Shiyoshi Yokoyama

DOI: https://doi.org/10.1109/jstqe.2021.3056721

IF: 4.9

2021-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:We present an O-band four-level pulse amplitude modulation (PAM4) transmitter based on a dual-drive silicon modulator with binary driving electronics at CMOS voltages, effectively eliminating the need for power-hungry digital-to-analog converters (DACs) and RF drivers. The fabricated dual-drive silicon modulator has cascaded p-n junction and p-i-n junction embedded in each arm of Mach-Zehnder interferometer, implementing high-speed data modulation and efficient bias control, respectively. Power dissipation of around 611 fJ/bit is obtained when synthesizing 46 Gb/s PAM4, showing high power efficiency. The fabricated silicon modulator exhibits a π-voltage-length product of 4.5 V·mm, and a 3-dB bandwidth of up to 27 GHz. Meanwhile, to implement a power-efficient PAM4 transceiver, the digital signal processing (DSP) at the receiver side is also discussed by balancing the performance and complexity. With a low-complexity DSP, negligible power penalty is observed after transmission over 38-km SSMF for both synthesized 20 Gb/s and 40 Gb/s PAM4. The presented PAM4 transmitter takes the advantages of both carrier-depletion and carrier-injection phase shifters for effective data modulation and bias control in PAM4 signalingand provides a power-efficient transmitter solution by eliminating the use of power-hungry DACs or RF drivers for datacenter interconnects.
Beyond 300gb/s from an Integrated Single-Channel Silicon Photonics Modulator Driver Combination

Ke Li,David J. Thomson,Lingjun Zhou,Weiwei Zhang,Shenghao Liu,Wei Cao,Callum G. Littlejohns,XingZhao Yan,Martin Ebert,Mehdi Banakar,Dehn Tran,Fanfan Meng,Lei Wang,Zhixue He,Fan Zhang,Shaohua Yu,Graham T. Reed

DOI: https://doi.org/10.1109/siphotonics60897.2024.10543408

2024-01-01

Abstract:We investigate the performance boundary of integrated CMOS silicon photonics transmitters by using optical equalisation techniques. Without using any off-line DSP techniques at the receiver side, experimental results demonstrate 182Gbps OOK and 308Gbps PAM-4 transmissions with the energy efficiency including driver, of better than 1pJ/bit.

Electro-Optical Co-Design of Power-Efficient 100-Gbps/λ PAM-4 VCSEL Transmitter

Optimization of PAM-4 transmitters based on lumped silicon photonic MZMs for high-speed short-reach optical links

A 50gb/s Low Power PAM4 SerDes Transmitter with 4-Tap FFE and High Linearity Output Voltage in 65nm CMOS Technology

An integrated CMOS–silicon photonics transmitter with a 112 gigabaud transmission and picojoule per bit energy efficiency

Spectral Efficiency and Energy Efficiency of Pulse-Amplitude Modulation Using 1.3 μm Wafer-Fusion VCSELs for Optical Interconnects

A Novel 40-Gb/s PAM4 Transmitter with Power-Efficient Pre-Emphasis

Silicon Photonic Micro-Ring Modulator-based 4 x 112 Gb/s O-band WDM Transmitter with Ring Photocurrent-based Thermal Control in 28nm CMOS

A 50-Gb/s PAM-4 Silicon-Photonic Transmitter Incorporating Lumped-Segment MZM, Distributed CMOS Driver, and Integrated CDR

A 44 Gbps PAM-4 Transmitter with Resistance Feedback 4:1 MUX in 65nm CMOS

4&Amp;#x00d7;30 Gbps 155mw/channel VCSEL Driver in 65nm CMOS

Single-channel 106.25 Gb/s PAM-4 and 64 Gb/s NRZ transmission with a 33.4-GHz 850-nm VCSEL with low-RIN characteristics

Electro-absorption Modulated 53 Gbps Widely Tunable Laser Based on Half-Wave V-coupled Cavities

8×250 Gbit/s PAM4 Transmission over 1 Km Single Mode Fiber with an All-Silicon LAN WDM Transmitter.

A 32gb/s 133mw PAM-4 Transceiver with DFE Based on Adaptive Clock Phase and Threshold Voltage in 65nm CMOS.

High-Speed PAM4-Based Optical SDM Interconnects with Directly Modulated Long-Wavelength VCSEL

25 Gb/s VCSEL Driver with Pulse Equalization Technique

A 4×112 Gb/s PAM-4 Silicon-Photonic Transmitter and Receiver Chipsets for Linear-Drive Co-Packaged Optics

Optimized Photonic-Electronic Co-Design for Hybrid Integrated Silicon-Based Optical Transmitters

A 4–40 Gb/s PAM4 Transmitter with Output Linearity Optimization in 65 Nm CMOS

Power-Efficient O-Band 40 Gbit/s PAM4 Transmitter Based on Dual-Drive Cascaded Carrier-Depletion and Carrier-Injection Silicon Mach-Zehnder Modulator with Binary Driving Electronics at CMOS Voltages

Beyond 300gb/s from an Integrated Single-Channel Silicon Photonics Modulator Driver Combination