Internal Matching Circuit Design of Rf Ldmos Power Transistor

Liang Song,Yaohui Zhang

DOI: https://doi.org/10.1109/icam.2016.7813554

2016-01-01

Abstract:This paper reports an optimized design of internal matching circuit for RF LDMOS power transistors. Efforts are mainly focused on the implementation of output internal matching circuit design, where a Shunt-L network structure is adopted. Computer-aided design (CAD) tools are employed to help rearrange the layout of bonding wire arrays to achieve a more uniform current distribution. Consequently, better robustness and RF performance can be obtained at the same time. With this technique, a RF LDMOS power transistor used at 2.14GHz is realized with saturation power of 51.3dBm and maximum efficiency of 63.8%.