Abstract:The remarkable electronic properties of monolayer MoTe 2 make it a very adaptable material for use in optoelectronic and nano-electronic applications. MoTe 2 growth often exhibits intrinsic defects, which significantly influence the material's characteristics. In this work, we conducted a thorough investigation of the electronic characteristics of intrinsic defects, including point defects, in monolayer MoTe 2 using first-principles calculations based on density functional theory (DFT). Our findings indicate that the presence of point defects leads to the formation of n-type properties as the Fermi level situates above the conduction band. Our first-principles density functional theory calculation revealed an appearance of donor level in the band gap close to the conduction band in MoTe 2 . Our study signifies that the formation energy of a vacancy in a Te atom is lower than that of both a vacancy in a Mo atom and two vacancies in Te atom. This suggests that during the synthesis process, it is more probable for Te atom vacancies to be created. A defect in the pristine monolayer of MoTe 2 leads to a slight decrease in the band gap, causing a transition from a direct band gap semiconductor to an indirect band gap semiconductor. The results of our study indicate that the presence of vacancy defects may modify the electronic properties of monolayer MoTe 2 , suggesting its potential as a new platform for electronic applications. Hence, our analysis offers significant theoretical backing for defect engineering in MoTe 2 monolayers and other 2D materials, a critical aspect in the advancement of nanoscale devices with the desired functionality. The study explores the electronic properties of monolayer MoTe2, revealing intrinsic defects that can enhance its potential for electronic applications and providing theoretical support for defect engineering in 2D materials.

Charge Density Depinning in Defective MoTe2Transistor by Oxygen Intercalation

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS 2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Contact Engineering of Molybdenum Ditelluride Field Effect Transistors Through Rapid Thermal Annealing

Transport Property Evolution in 2h‐mote2−x Mediated by Te‐Deficiency‐Induced Mirror Twin Boundary Networks

Enormous Enhancement in Electrical Performance of Few-Layered MoTe2 Due to Schottky Barrier Reduction Induced by Ultraviolet Ozone Treatment

Self-Terminated Surface Monolayer Oxidation Induced Robust Degenerate Doping in MoTe2 for Low Contact Resistance

Engineering the electronic properties of MoTe2 via defect control

Strain Engineering for Enhancing Carrier Mobility in MoTe2 Field-Effect Transistors

Conversion of Charge Carrier Polarity in MoTe2 Field Effect Transistor via Laser Doping

Lowering the Schottky Barrier Height by Quasi-van Der Waals Contacts for High-Performance P-Type MoTe2 Field-Effect Transistors

Reduced Schottky Barrier Height at Metal/cvd-Grown MoTe2 Interface

Enhanced Photoresponsivity and Hole Mobility of MoTe2 Phototransistors by Using an Al2O3 High-Κ Gate Dielectric

Controlling Polarity of MoTe2 Transistors for Monolithic Complementary Logic via Schottky Contact Engineering

Reduced Schottky barrier height at metal/CVD-grown MoTe<sub>2</sub> interface

MoTe2 Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation

Largely Reducing the Contact Resistance of Molybdenum Ditelluride by In Situ Potassium Modification

Semiconductor-semimetal Transition of MoTe2 Monolayer Modulated by Charge-Injection and Strain Engineering

Self-Assembled Monolayer Doping for MoTe2 Field-Effect Transistors: Overcoming PN Doping Challenges in Transition Metal Dichalcogenides

Character of Defect States in Vacancy-Doped MoTe2 Monolayer: Spatial Localization, Flat Bands and Hybridization Gap

Bandgap Opening in MoTe2 Thin Flakes Induced by Surface Oxidation