Optimum Vld Makes Spic Better And Cheaper

Xb Chen,Xf Fan

2001-01-01

Abstract:The novel structure for surface voltage sustaining region makes power (or high-voltage) devices capable to implement on conventional CMOS or BiCMOS ICs without demanding additional process. The electrical performances of this kind of power devices are much better than that made by BCD techniques. Different kind of devices using for both low-side and high-side can be made.

What problem does this paper attempt to address?

Optimum VLD Makes SPIC Better and Cheaper

Chen Xing-bi,Fan Xue-feng

DOI: https://doi.org/10.1109/icsict.2001.981433

2001-01-01

Abstract:The novel structure for surface voltage sustaining region makes power (or high-voltage) devices capable of implementation on conventional CMOS or BiCMOS ICs without demanding additional processes. The electrical performances of this kind of power devices are much better than that made by the BCD techniques. Different kinds of devices using both the low-side and high-side can be made
A Novel Low-Side Structure For Optvld-Spic Technologically Compatible With Bicmos

Junji Cheng,Xingbi Chen

DOI: https://doi.org/10.1109/ISPSD.2013.6694444

2013-01-01

Abstract:A novel low-side structure based on the optimum variation lateral doping (OPTVLD) technique, which is formed by many inner VDMOS cells combining an outermost LDMOS, is realized in the 0.8 mu m BiCMOS-compatible technology. With the benefit of the additional vertical cells, it presents a low specific on-resistance with high breakdown voltage, which significantly advances the prior art. Furthermore, since this low-side structure is capable of being integrated with high-side structure and circuits on a single chip, through the low-cost self-isolation (SI) technology, it is very attractive for fabricating the smart power IC (SPIC) better and cheaper.
Design And Optimization Of A Versatile 700 Vspic Process Using A Fully Implanted Triple-Well Technology

Wanjun Chen,Bo Zhang,Zehong Li,Zhaoji Li,Xiaochuan Deng,Jianbing Cheng

DOI: https://doi.org/10.1109/ispsd.2006.1666114

2006-01-01

Abstract:A SPIC (Smart Power IQ process with a wide range of devices up to 700 V has been designed and optimized. An important feature is that all the devices have been realized by using a fully implanted triple-well technology in a P-type single crystal without epitaxial layer or buried layer. The results of this process are the low fabrication cost, simple process and small chip area. In addition to high voltage lateral DMOS (HV-LDMOS) transistor with the breakdown voltage (BV) 700 V as well as JFET device and low voltage CMOS (LV-CMOS) transistors have been fabricated using this process, a NPN type bipolar transistor is also realized and optimized by a additional implantation and drive-in. The major features of this process for SPIC fabrication have been clearly demonstrated.
A New LDMOS/LIGBT Hybrid Structure In SPIC

Xiao-an ZHU,Xue-ning LI,Jian FANG,Jian YANG,Zhao-ji LI

DOI: https://doi.org/10.3321/j.issn:0372-2112.2000.05.037

2000-01-01

Tien Tzu Hsueh Pao/Acta Electronica Sinica

Abstract:A special LDMOS/LIGBT hybrid structure is proposed in this paper. It has both characteristics of LIGBT's strong drive ability and LDMOS's fast speed. Also, it has small substrate current and can prevent latch-up well. Using it, we can get stable signal in the wide voltage range. The results of numerical simulation and experiments demonstrate that this hybrid structure has excellent advantages for high-side and low-side signal transmissions.
Theory of a novel voltage sustaining (CB) layer for power devices

Chen Xingbi

IF: 1.019

1998-01-01

Chinese Journal of Electronics

Abstract:The theory of a novel voltage sustaining layer for power devices, called as Composite Buffer layer (shortly as CB-layer) is proposed. The CB-layer consists of alternating stacked n-regions and p-regions, where the interfaces between any n-region and its neighbouring p-region are perpendicular to the two planes across which the applied voltage is to be sustained. In the off-state, the fields induced by the charges of both regions compensate each other to a large extent so that the doping concentrations of both n-regions and p-regions can be very high without causing a lowering of the breakdown voltage. On the other hand, heavy doping makes the on-voltage very low and the saturation current density very high. The relation of the specific on-resistance Ron for unipolar conduction and the sustaining voltage VB for such a structure is approximately Ron ∝ V1 32 B, which is a breakthrough to the "Silicon Limit" Ron ∝ V2.5 B. The design method of the CB-layer is introduced in detail. The results of simulation are shown to be in perfect agreement with the theory. The structure has applicability to a wide variety of different power devices. One example of such an application is to use it in an RMOST, which shows excellent performances.
Design and Optimization of Power Devices in A Bcd Process

Fan Xu,Chunxiao Fu,Yuhua Cheng

DOI: https://doi.org/10.1149/1.3360614

2010-01-01

ECS Transactions

Abstract:We present the results of design and optimization of high-voltage devices (170V) in a novel 0.35um BCD process. This process is based on a 0.35um BCD process. Process parameter optimization and device structures have been designed after detailed TCAD simulation and experimental device characterization. Several approaches such as adjusting field plate and optimizing LDD structure have been tried to improve breakdown voltage of the devices. By analyzing experiment results from several process splits, designs of 170V high voltage devices have been finalized. Good performance and very competitive specific on-resistances of devices after optimizition have been achieved.
Optimum design of 1.4 kV trench IGBTs-the next generation of high power switching devices

t trajkovic,p waind,j thomson,f udrea,x yuan,sheng huang,w i milne,g a j amaratunga,d e crees

DOI: https://doi.org/10.1049/ic:19990599

1999-01-01

Abstract:The trench insulated gate bipolar transistor (IGBT) is the most promising structure for the next generation of power semiconductor devices with wide applications ranging from motor control (1.4 kV) to HVDC (6.5 kV). Here, the authors present, for the first time, an optimum design of a 1.4 kV trench IGBT using a new, fully integrated, optimisation system comprising process and device simulators and the RSM optimiser. The use of this new TCAD system has contributed largely to realizing devices with characteristics far superior to the previous DMOS generation of IGBTs. Full experimental results on 1.4 kV trench IGBTs which are in excellent agreement with the TCAD predictions are reported.
Theory of a Novel Voltage-Sustaining Layer for Power Devices

XB Chen,PA Mawby,K Board,CAT Salama

DOI: https://doi.org/10.1016/s0026-2692(98)00065-2

1998-01-01

Abstract:The theory of a novel voltage-sustaining layer for power devices, called a Composite Buffer layer (CB-layer for short) is proposed. The CB-layer can be implemented in several ways, one particular implementation is used here, which consists of alternating n- and p-type regions, that are parallel to the direction of the applied electric field. In the off-state, the fields induced by the depletion charges of both region types compensate each other to allowing the doping in both n-regions and p-regions to be very high without causing a reduction of the breakdown voltage. In the onstate the heavy doping ensures the voltage drop is very low and that the saturation current density high. A simple relationship between the specific on-resistance and Ron and the sustaining voltage VB can be shown to be Ron=2.53 × 10−7bVB1.23 ωcm2, where the breadth b (in μm) of each region is much smaller than the thickness W. The design method of the CB-layer is discussed in some detail. The simulation results are shown to be in perfect agreement with the theory. The structure has application to a wide variety of different power devices. An RMOST structure has been used to demonstrate the benefits of the technique in the paper, for which excellent performance is demonstrated.
Low Specific On-Resistance P-Type OPTVLDLDMOS with Double Hole-Conductive Paths for SPIC Application

Junji Cheng,Xingbi Chen

DOI: https://doi.org/10.1109/ispsd.2012.6229064

2012-01-01

Abstract:A novel p-type DP-OPTVLD (Double-Paths & OPTimum-Variational-Lateral-Doping) LDMOS is proposed. It features the double hole-conductive paths formed by a top and a buried p-layer in the drift region using OPTVLD technique, which significantly contribute to reducing device specific on-resistance. The design principle and electrical characteristics of the proposed structure are investigated theoretically and experimentally. Simulation results show that the specific on-resistances are 155/689 mΩ·cm2 with breakdown voltages of 300/800 V for the proposed structure, respectively, which are less than 60% of that with corresponding breakdown voltages for the conventional structure. This structure used as high-side can apply to SPIC with a low integration difficulty and a low fabrication cost.
A Versatile Low-Cost Smart Power Technology Platform For Applications Over Broad Current And Voltage Ranges

Zhi Lin,Hao Hu,Junji Cheng,Xingbi Chen

DOI: https://doi.org/10.1109/bctm.2013.6798152

2013-01-01

Abstract:A versatile low-cost manufacturing technology, which is based on the optimum variation lateral doping technique, is proposed for smart power ICs in this paper. The proposed technology is capable to combine the lateral and vertical high voltage (>800V) devices on a single chip, which is suitable for applications over broad current ranges. It is fully compatible with BiCMOS process and has been implemented on a standard CMOS line with only 11 masks. Devices with various breakdown voltages, as well as a switched-mode power supply chip, are successfully fabricated on this platform. The measured results are displayed and discussed in detail.
An Improved Superjunction Structure with Variation Vertical Doping Profile

Zhi Lin,Haimeng Huang,Xingbi Chen

DOI: https://doi.org/10.1109/ted.2014.2372819

IF: 3.1

2015-01-01

IEEE Transactions on Electron Devices

Abstract:An analysis of an improved superjunction structure with variation vertical doping profile (VVD-SJ) is presented in this brief. It features a better tradeoff between breakdown voltage (BV) and specific ON-resistance (R-on) than the prior art, due to a higher average doping concentration in columns. A simple 2-D electric field model of the VVD-SJ structure is derived based on charge superposition principle. Optimized results show that the specific ON-resistance of the VVD-SJ structure is reduced by similar to 10%, compared with the SJ one under the same BV and aspect ratio. The mainstream multiple epitaxial growth and implantation technology is suitable to fabricate the VVD-SJ power MOSFET without extra process cost.
Analysis and Optimization of High-Voltage Devices in A Bcd Process

Chunxiao Fu,Fan Xu,Yuhua Cheng

DOI: https://doi.org/10.1149/1.3360606

2010-01-01

Abstract:This paper presents two-dimensional process and device(15V) simulation results and optimization of power device in a 0.35um Bipolar/CMOS/DMOS(BCD) process. Detailed device simulations and structure designs have been done. Test structures with specific considerations have been developed. With both simulation and experimental results, the optimized devices show excellent performance, which have been demonstrated with characterization results from devices on wafers from process qualification lots.
A Practical Approach to Enhance Yield of OPTVLD Products

Junji Cheng,Xingbi Chen

DOI: https://doi.org/10.1109/LED.2012.2230607

2013-01-01

Abstract:In the prior art of the optimum variation lateral doping (OPTVLD) technique, the dose deviations between designs and products should be tightly controlled to achieve the eligible breakdown voltages (BVs); however, an approach presented in this letter overcomes this shortcoming without any penalty. Its physical explanation is discussed, and the simulations show that, through using this approach, the allowed dose-deviation range is relaxed from about ±1.5% to about ±5%, which can significantly enhance the yield over the existing state of the art. As a result, at an artificial dose-deviation rate of ±5 %, the OPTVLD products with the high yield of 94.4 % are first fabricated in the BiCMOS process, and the measured maximal BV of 1000 V corresponds very well to the ideal value of 1090 V.
Novel High-Voltage, High-Side and Low-Side Power Devices with a Single Control Signal

Kong Moufu,Chen Xingbi

DOI: https://doi.org/10.1088/1674-4926/34/9/094009

2013-01-01

Journal of Semiconductors

Abstract:Novel high-voltage, high-side and low-side power devices, whose control circuits are referred to as the tub, are proposed and investigated to reduce chip area and improve the reliability of high-voltage integrated circuits. By using the tub circuit to control a branch circuit consisting of a PMOS and a resistor, a pulse signal is generated to control the low-side n-LDMOS after being processed by a low-voltage circuit. Thus, the high-voltage level-shifting circuit is not needed any more, and the parasitic effect of the conventional level-shifting circuit is eliminated. Moreover, the specific on-resistance of the proposed low-side device is reduced by more than 14.3% compared with the conventional one. In the meantime, integrated low-voltage power supplies for the low-voltage circuit and the tub circuit are also proposed. Simulations are performed with MEDICI and SPICE, and the results show that the expectant functions are achieved well.
A Novel High-Voltage Sustaining Structure with Buried Oppositely Doped Regions

Xb Chen,X Wang,Jko Sin

DOI: https://doi.org/10.1109/16.842974

IF: 3.1

2000-01-01

IEEE Transactions on Electron Devices

Abstract:A novel high-voltage sustaining structure with buried oppositely doped regions is demonstrated. Due to the compensation of the electric field provided by these regions, the resistivity and/or the thickness of the voltage-sustaining layer can be made smaller than that of a conventional one with the same breakdown voltage, and therefore the on-resistance (of unipolar conduction) can be reduced. The theory developed for designing such structures is found to be in good agreement with the results obtained from two-dimensional (2-D) simulation as well as from experiment. A 500 V VD-MOST using such a structure as the drift region and with proper edge termination is fabricated. Results show that its on-resistance is lower than the value given by the conventional "silicon limit".
A Novel BCD Structure with Semi-Insulation Bonding SOI

Tan Kaizhou,Yang Mohua,Xu Shiliu,Liu Yukui,Li Zhaoji,Liu Yong,Feng Jian

DOI: https://doi.org/10.3969/j.issn.1674-4926.2007.05.027

2007-01-01

Chinese Journal of Semiconductors

Abstract:A novel BCD structure with semi-insulation bonding SOI is proposed.It reliably integrates a high voltage power device,CMOS,and BJT into a monolithic circuit.Integrated VDMOS lengthways is a unique feature of this structure.It is a useful technique in applications of automotive electronics,radiation hardening,and strong electromagnetic pulses (EMP).The breakdown voltage of this BCD structure VDMOS is 160V,its on-resistance is 0.3Ω,and its specific on-resistance is 26mΩ·cm2.The breakdown voltages of npn,pMOS,and nMOS are 50,35,and 30V,respectively,and the npn current gain and cut-off frequency are 120 and 700MHz,respectively.
High-Voltage Thin-Soi Ldmos with Ultralow On-Resistance and Even Temperature Characteristic

Jie Wei,Xiaorong Luo,Yanhui Zhang,Pengcheng Li,Kun Zhou,Bo Zhang,Zhaoji Li

DOI: https://doi.org/10.1109/ted.2016.2533022

IF: 3.1

2016-01-01

IEEE Transactions on Electron Devices

Abstract:An ultralow specific ON-resistance (R-ON,R-sp) thin-silicon-on-insulator (SOI) LDMOS is proposed. Its ON-state and OFF-state mechanisms and thermal characteristic are investigated by simulation. It features an accumulation extended gate (AEG) structure on the surface and the AEG consists of a p-region and two integrated diodes. In the ON-state, the high density electron accumulation layer formed in the drift region surface provides an extremely low-resistance current path, which dramatically decreases the R-ON,R-sp and eases the dependence of R-ON,R-sp on the drift doping concentration (N-d). Meanwhile, the charge compensation effect between the drift region and the p-region of AEG allows a higher N-d value and then further decreases R-ON,R-sp. Consequently, the AEG contributes to an ultralow R-ON,R-sp owing to the accumulation layer and the charge compensation effect. On the other hand, the thin SOI of the proposed device adopts variable lateral doping (VLD) to realize high breakdown voltage (BV). Note that the intrinsic hotspot effect caused by the thin VLD SOI is overcome and, thus, the proposed device obtains a lower and evenly distributed surface temperature in the ON-state, owing to the accumulation layer along the drift region surface. Moreover, the two reverse biased diodes in the AEG sustain the gate-drain voltage in the ON-state and OFF-state, respectively, ensuring low current leakage and high BV. Therefore, compared with the VLD SOI LDMOS at the same dimensions, the proposed device not only decreases R-ON,R-sp by 65% and increases the BV by 7%, but also obtains an even surface temperature distribution and decreases the maximum surface temperature by 52 K at the same power density.
Breakthrough to the "silicon Limit" of Power Devices

XB Chen

DOI: https://doi.org/10.1109/icsict.1998.785827

1998-01-01

Abstract:The results of some new developments in voltage sustaining structures for both vertical and lateral power devices are presented. A figure of merit is defined for characterising the devices, show that they are far superior to those of prior art.
Optimization of Specific ON-Resistance of Superjunction Device with Two-Zones Variation Vertical Doping Profile

Wenjun Li,Haimeng Huang,Zimin Zhang,Junji Cheng,Bo Yi,Hongqiang Yang,Zhiming Wang

DOI: https://doi.org/10.1109/icsict55466.2022.9963162

2022-01-01

Abstract:An analytical Superjunction (SJ) structure with two zones variation vertical doping profile (VVD-SJ) is proposed in this article. The 2-D electric field distributions are derived by charge superposition method. Optimization is carried out based on the MATLAB. The validity of the electric field distributions, breakdown voltage (BV) and impact ionization integral are demonstrated by TCAD MEDICI. The optimized results show the R on,sp of the VVD-SJ can be reduced by ~16% compared with that of convention SJ.
A High-Voltage “Quasi-P-ldmos” Using Electrons As Carriers in Drift Region Applied for SPIC

Bo Yi,Junji Cheng,Xing Bi Chen

DOI: https://doi.org/10.1109/tpel.2017.2706021

IF: 5.967

2018-01-01

IEEE Transactions on Power Electronics

Abstract:A new type of “quasi-p-lateral diffused metal oxide semiconductor” (quasi-p-LDMOS), in which electrons are used as conductive carriers in the drift region is proposed. A floating electrode F is used in the “quasi-p-LDMOS” to transform the hole current into electron current. Then, by using an integrated low-voltage power and an inverter to control the electron current automatically, the specific on-resistance (R on,sp) is significantly reduced and the device can be successfully turned on and off. Simulation results show that the Ron,sp is 12.77 and 31 mΩ·cm 2 for a 349 and 630 V “quasi-p-LDMOS,” being only about 19.7% and 14.7% of a Triple-RESURF p-LDMOS, respectively. Moreover, the Ron,sp is even lower than that of a Triple-RESURF n-LDMOS at the same rated breakdown voltage. The figure of merit of the device is 3 to 7 times of that of state-of-the-arts. The “quasi-p-LDMOS” is designed as a low-side device in a new high-voltage CMOS circuit. By applying the “quasi-p-LDMOS” in the CMOS circuit, the total power loss is much lower than that of a conventional half-bridge circuit in a wide operating frequency. The “quasi-p-LDMOS” is suitable for smart power integrated circuit to improve both the integration level and system efficiency, and simplifies the circuit design.

Optimum Vld Makes Spic Better And Cheaper

Optimum VLD Makes SPIC Better and Cheaper

A Novel Low-Side Structure For Optvld-Spic Technologically Compatible With Bicmos

Design And Optimization Of A Versatile 700 Vspic Process Using A Fully Implanted Triple-Well Technology

A New LDMOS/LIGBT Hybrid Structure In SPIC

Theory of a novel voltage sustaining (CB) layer for power devices

Design and Optimization of Power Devices in A Bcd Process

Optimum design of 1.4 kV trench IGBTs-the next generation of high power switching devices

Theory of a Novel Voltage-Sustaining Layer for Power Devices

Low Specific On-Resistance P-Type OPTVLDLDMOS with Double Hole-Conductive Paths for SPIC Application

A Versatile Low-Cost Smart Power Technology Platform For Applications Over Broad Current And Voltage Ranges

An Improved Superjunction Structure with Variation Vertical Doping Profile

Analysis and Optimization of High-Voltage Devices in A Bcd Process

A Practical Approach to Enhance Yield of OPTVLD Products

Novel High-Voltage, High-Side and Low-Side Power Devices with a Single Control Signal

A Novel High-Voltage Sustaining Structure with Buried Oppositely Doped Regions

A Novel BCD Structure with Semi-Insulation Bonding SOI

High-Voltage Thin-Soi Ldmos with Ultralow On-Resistance and Even Temperature Characteristic

Breakthrough to the "silicon Limit" of Power Devices

Optimization of Specific ON-Resistance of Superjunction Device with Two-Zones Variation Vertical Doping Profile

A High-Voltage “Quasi-P-ldmos” Using Electrons As Carriers in Drift Region Applied for SPIC