Structural and Optical Properties of Nearly Stress-Free M-Plane ZnO Film on (100) Γ-Lialo2 with a GaN Buffer Layer by Metal-Organic Chemical Vapor Deposition

Hui Lin,Shengming Zhou,Hao Teng,Xiaorui Hou,Tingting Jia,Shulin Gu,Shunming Zhu,Zili Xie,Ping Han,Rong Zhang,Ke Xu

DOI: https://doi.org/10.1016/j.apsusc.2009.06.127

IF: 6.7

2009-01-01

Applied Surface Science

Abstract:(1 0 (1) over bar 0) m-plane ZnO film was epitaxially deposited on (1 0 0) gamma-LiAlO2 by metal-organic chemical vapor deposition at 600 degrees C with a GaN buffer layer. The epitaxial relationships between ZnO and GaN, GaN and (1 0 0) gamma-LiAlO2 were determined by X-ray diffraction Phi-scans. There exhibits very small decrease for the E-2 mode shift (0.3 cm (1)) of ZnO in the Raman spectrum, which indicates the epitaxial ZnO film was under a slight tensile stress (5.77 x 10(7) Pa). Unlike the highly strained a-plane ZnO, temperature dependent photoluminescence spectra show that the free A exiton emission was observed with the temperature <= 138 K. (C) 2009 Elsevier B. V. All rights reserved.