Effect Of Anode Carrier Concentration On Oled Performance

Jianqiao Hu,Furong Zhu,Li-Wei Tan,Kian Soo Ong,Xiaotao Hao
2005-01-01
Abstract:A study was carried out to understand the effect of carrier concentration in anode on the electroluminescent performance of the OLEDs. A set of indium tin oxide (ITO) films with similar sheet resistance but different carrier concentrations was fabricated by radio frequency magnetron sputtering using a hydrogen-a T on gas mixture at a process temperature of similar to 60 degrees C. The surface electronic structure of ITO was found to be relevant to the carrier concentration in ITO film, which is crucial for the carrier injection. A set of identical OLEDs was fabricated on ITO films with different carrier concentrations. It is found that the anode contact property at ITO/organic interface can be optimized by controlling ITO bulk carrier concentrations and its surface properties through surface modification. The current density-luminance-voltage characteristics of the devices reveal that the carrier concentration in ITO also plays a role in improving the device performance. The results and findings of this work have provided a technical guidance and fundamental insight for engineering the ITO surface electronic properties that are desired for an efficient and durable OLED.
What problem does this paper attempt to address?