Design and manipulation of heterojunction for graphene composite structure photoconductive photodetector

Hao Jiang,Changbin Nie,Feiying Sun,Jintao Fu,Jiuxun Sun

DOI: https://doi.org/10.1117/12.2575677

2020-01-01

Abstract:As a typical atomically thin two-dimensional (2D) crystal, graphene-based photodetector has attracted tremendous attention in recent years due to excellent photoelectric performance of graphene. However, due to the unstable chemical properties of graphene, the guidance is lacking in the design of composites with other materials. The stability and repeatability of the device are also restricted by the material properties. Here, we have established a graphene simulation model and obtained the electrical characteristics of graphene which are consistent with the experimental results by using the method of equivalent design. We simulate the detection capability of graphene-silicon composite photodetector and graphene-germanium photodetector under different doping conditions for visible light (532nm) and near infrared wave (1550nm) respectively. The current-voltage characteristics of the heterojunction are obtained. Through this model, the proposed bottom gate adjustment mechanism makes the carrier transport of graphene/silicon-on-insulator (GSOI) photodetector adjustable. By adjusting the carrier concentration and distribution in the graphene channel and silicon through the bottom gate voltage, an enhanced built-in potential is obtained, which increases the device responsivity by 5-10 times to106 A/W. This model can be used to simulate the carrier distribution and current density when different gate voltages are applied, and the modulation law of this model is in good agreement with the experimental results. This work will be beneficial to the mechanism analysis and performance optimization of the graphene composite structure photodetector, which has important guiding significance for the experiment.