Abstract:It is important to determine the effects of misfit dislocations and other defects on the domain structure, ferroelectricity, conductivity, and other physical properties of ferroelectric thin films to understand their ferroelectric and piezoelectric behaviors. Much attention has been given to ferroelectric PbTiO3/SrTiO3 or PbZr0.2Ti0.8O3/SrTiO3 heterointerfaces, at which improper ferroelectricity, a spin-polarized two-dimensional electron gas, and other physical phenomena have been found. However, those heterointerfaces were all (001) planes, and there has been no experimental studies on the growth of (010) PbTiO3/SrTiO3 heterointerface due to the 6.4% misfit between two materials. In this study, we selected an atomically flat (010) PbTiO3/SrTiO3 heterointerface grown using a two-step hydrothermal method as the research subject, and this is the first experimental report on that interface. Interfacial dislocations can play a significant role in causing dramatic changes in the Curie temperature and polarization distribution near the dislocation cores, especially when the size of a ferroelectric thin film is scaled down to the nanoscale. The results of previous studies on the effects of interfacial dislocations on the physical properties of ferroelectric thin films have been contradictory. Thus, this issue needs to be explored more deeply in the future. This study used aberration corrected scanning transmission electron microscopy (STEM) to study the atomic structure of a (010) PbTiO3/SrTiO3 heterointerface and found periodic misfit dislocations with a Burgers vector of a[001]. The extra planes at the dislocation cores could relieve the misfit strain between the two materials in the [001] direction and thus allowed the growth of such an atomically sharp heterointerface. Moreover, monochromated electron energy-loss spectroscopy with an atomic scale spatial resolution and high energy resolution was used to explore the charge distribution near the periodic misfit dislocation cores. The fine structure of the Ti L edge was quantitatively analyzed by linearly fitting the experimental spectra recorded at various locations near and at the misfit dislocation cores with the Ti3+ and Ti4+ reference spectra. Therefore, the accurate valence change of Ti could be determined, which corresponded to the charge distribution. The probable existence of an aggregation of electrons was found near the a[001] dislocation cores, and the density of the electrons calculated from the valence change was 0.26 electrons per unit cell. Based on an analysis of the fine structure of the oxygen K edge, it could be argued that the electrons aggregating at the dislocation cores came from the oxygen vacancies in the interior regions of the PbTiO3. This aggregation of electrons will probably increase the electron conductivity along the dislocation line. The physics of two-dimensional charge distributions at oxide interfaces have been intensively studied, however, little attention had been given to the one-dimensional charge distribution. Therefore, the results of this study can stimulate research interest in exploring the influence of the interfacial dislocations on the physics of ferroelectric heterointerfaces.

Interface Effect on the Magnitude and Stability of Ferroelectric Polarization in Ultrathin PbTiO3 Films from First-Principles Study

Periodic Misfit Dislocation And Electron Aggregation At (010) Pbtio3/Srtio3 Heterointerface

Tuning Interfacial Magnetic Ordering Via Polarization Control in Ferroelectric SrTiO3/PbTiO3 Heterostructure.

Local Enhancement of Polarization at PbTiO3/BiFeO3 Interfaces Mediated by Charge Transfer.

Interface-induced modulation of charge and polarization in thin film Fe(3)O(4).

Controlled Growth and Atomic-Scale Mapping of Charged Heterointerfaces in PbTiO3/BiFeO3 Bilayers.

Enhancement of Interfacial Polarization in BaTiO 3 Thin Films via Oxygen Inhomogeneity

Controlled Growth and Atomic-Scale Mapping of Charged Heterointerfaces in PbTiO 3 /BiFeO 3 Bilayers.

Interface Dipole Effect on Thin Film Ferroelectric Stability: First-Principles and Phenomenological Modeling

Ferroelectric Polarization-Modulated Interfacial Fine Structures Involving Two-Dimensional Electron Gases in Pb(Zr,Ti)O 3 /LaAlO 3 /SrTiO 3 Heterostructures.

Ferroelectric Polarization-Modulated Interfacial Fine Structures Involving Two-Dimensional Electron Gases in Pb(Zr,Ti)O<sub>3</sub>/LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Heterostructures

Effect of Polar Distortion on Electronic Structures of (001) LaGaO3/SrTiO3 Interface

Size effect of PbTiO 3 on its charge separation ability

Effects of Strain and Oxygen Vacancies on the Ferroelectric and Antiferrodistortive Distortions in Pbtio3/Srtio3 Superlattice

Effect of Interface Configurations on the Dynamic Scaling Behavior of Pb(Zr0.53ti0.47)O-3 Thin Films

Strain effects on stability of topological ferroelectric polar configurations in (PbTiO3) n /(SrTiO3) n superlattices

Strain coupling of ferroelastic domains and misfit dislocations in [101]-oriented ferroelectric PbTiO3 films

Effect of electric-field-assisted thermal treatment on the strain and ferroelectric properties of (100)-oriented ferroelectric Pb(Zr0.52Ti0.48)O3 thin films

Structural and Electronic Properties of Pbtio3/Srtio3 Superlattices from First Principles

Atomic-Scale Structure and Properties of Epitaxial PbZr 0.2 Ti 0.8 O 3 /SrRuO 3 Heterointerfaces

Effects of Interfaces on the Structure and Novel Physical Properties in Epitaxial Multiferroic BiFeO3 Ultrathin Films