Interfacial Potentials For Ag/Gan(0001) Interfaces By Inversion Of Adhesive Energy

Hong-Quan Song,Jiang Shen,Ping Qian,Nan-Xian Chen
DOI: https://doi.org/10.1016/j.physb.2013.09.006
2013-01-01
Abstract:To study the metal/semiconductor interface by means of atomistic simulation, an effective interfacial potential is an important issue. In this work, we use a Chen-Mobius inversion method to study the Ag/GaN(0 0 0 1) interface, and get a concise and general inversion formula, which is used to extract interfacial potentials for the Ag(1 1 1)/GaN(0 0 0 1) interface derived from ab initio adhesive energies. Transferability of those potentials at different environment are checked, and the result show that the inversed potentials are self-consistent and also partially transferable. (C) 2013 Published by Elsevier B.V.
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