Abstract:Interatomic potentials play a crucial role in the molecular dynamics (MD) simulation of silicon carbide (SiC). However, the ability of interatomic potentials to accurately describe certain physical properties of SiC has yet to be confirmed, particularly for hexagonal SiC. In this study, the mechanical, thermal, and defect properties of four SiC structures (3C-, 2H-, 4H-, and 6H-SiC) have been calculated with multiple interatomic potentials using the MD method, and then compared with the results obtained from density functional theory and experiments to assess the descriptive capabilities of these interatomic potentials. The results indicate that the T05 potential is suitable for describing the elastic constant and modulus of SiC. Thermal calculations show that the Vashishta, environment-dependent interatomic potential (EDIP), and modified embedded atom method (MEAM) potentials effectively describe the vibrational properties of SiC, and the T90 potential provides a better description of the thermal conductivity of SiC. The EDIP potential has a significant advantage in describing point defect formation energy in hexagonal SiC, and the GW potential is suitable for describing vacancy migration in hexagonal SiC. Furthermore, the T90 and T94 potentials can effectively predict the surface energies of the three low-index surfaces of 3C-SiC, and the Vashishta potential exhibits excellent capabilities in describing stacking fault properties in SiC. This work will be helpful for selecting a potential for SiC simulations.

Interfacial Potentials for Al/Sic(111)

An Inverse Adhesion Problem For Extracting Interfacial Pair Potentials For The Al(001)/3c-Sic(001) Interface

An Inverse Adhesion Problem for Extracting Interfacial Pair Potentials for the Al(0 0 1)/3c–sic(0 0 1) Interface

Atomistic Study of Misfit Dislocation in Metal/sic(111) Interfaces

Crystal Chemistry at Interfaces Between Liquid Al and Polar SiC{0001} Substrates

Mechanical and Electronic Properties of Al(111)/6H-SiC Interfaces: A DFT Study

First-principles study of interfaces in Al/SiC metal-matrix composite system

Electronic and mechanical properties of Al (100)/6H–SiC (0001) interfaces: a first-principles study

First-principle calculations on the structure of 6H-SiC/Al interface

First-principles calculation of the interface stability of 3C-SiC(111)/Mg(0001)

Interfacial Potentials For Ag/Gan(0001) Interfaces By Inversion Of Adhesive Energy

Comparison and Assessment of Different Interatomic Potentials for Simulation of Silicon Carbide

Effects of Transition Element Additions on the Interfacial Interaction and Electronic Structure of Al(111)/6H-SiC(0001) Interface: A First-Principles Study

Theoretical investigations of a highly mismatched interface: the case of SiC/Si(001)

Investigation of interfacial matching between 3C-SiC substrate crystals and its surface layer deposited Cu elements using molecular dynamics simulations

First-principles calculation on β-SiC(111)/α-WC(0001) interface

Characterization and energy calculation of the S/Al interface of Al–Cu–Mg alloys: Experimental and first-principles calculations

Theoretical Study of Fcc-Metal/Mgo(110) Interfacial Potentials

Ab Initio Calculation of Vacancies and Interstitials in NiSi 2

Effects of Transition Element Additions on the Mechanical and Electronic Structure Properties of Al (111)/6H-SiC (0001) Interface: A First Principles Study

Mechanical Properties of Interfaces between Mg and SiC: An Ab Initio Study