Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Controlling Nucleation of Monolayer WSe 2 During Metal-Organic Chemical Vapor Deposition Growth

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Nucleation and Growth of WSe2: Enabling Large Grain Transition Metal Dichalcogenides

Chemical Vapor Deposition Growth of Monolayer WSe2 with Tunable Device Characteristics and Growth Mechanism Study

First Principles Kinetic Monte Carlo Study on the Growth Patterns of WSe 2 Monolayer

Growth-Etch Metal-Organic Chemical Vapor Deposition Approach of WS2 Atomic-Layers

Highly Selective Synthesis of Monolayer or Bilayer WSe 2 Single Crystals by Pre-annealing the Solid Precursor

Metatungstate Chemical Vapor Deposition of WSe2: Substrate Effects, Shapes, and Morphologies

Precise Construction and Growth of Submillimeter Two-Dimensional WSe2 and MoSe2 Monolayers

Controllable synthesis of monolayer WSe 2 crystals by Copper-Assisted chemical vapor deposition

Ultrafast Self-Limited Growth of Strictly Monolayer Wse2 Crystals

Controlled Growth of Large-Area Bilayer Tungsten Diselenides with Lateral P-N Junctions

Origin of Ultrafast Growth of Monolayer WSe2 Via Chemical Vapor Deposition

Growth of centimeter scale Nb1−xWxSe2 monolayer film by promoter assisted liquid phase chemical vapor deposition

Controlling Morphology and Excitonic Disorder in Monolayer WSe2 Grown by Salt-Assisted CVD Methods

Role of Bilayer Graphene Microstructure on the Nucleation of WSe2 Overlayers

Modified Spatially Confined Strategy Enabled Mild Growth Kinetics for Facile Growth Management of Atomically-Thin Tungsten Disulfides

Atomic insight into the effects of precursor clusters on monolayer WSe2

CVD Controlled Growth of Large-Scale WS2 Monolayers

Electronic and Optoelectronic Monolayer WSe2 Devices Via Transfer-Free Fabrication Method.