Doping effects on boron carbide quantum dots for solar cells application: DFT study

Ibrahim Mahariq,Rohit Sharma,Anjan Kumar,Krunal Vaghela,Rekha M. M,Lokesh Verma,M Ravi Kumar,Maythum Ali Shallan,Abdulrahman A. Almehizia
DOI: https://doi.org/10.1016/j.jpcs.2024.112446
IF: 4.383
2024-11-20
Journal of Physics and Chemistry of Solids
Abstract:The DFT method was used to explore the photovoltaic properties of nitrogen- and phosphorus-doped boron carbide quantum dots (BC 3 QDs). Results showed chemical activity values of -5.512 eV for nitrogen-doped and -3.971 eV for phosphorus-doped BC 3 QDs, with nitrogen-doped samples exhibiting higher chemical activity. Doping introduced mid-gap states, causing a red shift in the absorption spectra of 106 nm for nitrogen and 118 nm for phosphorus doping. Nitrogen doping (N-doping) enhanced charge transfer capabilities compared to phosphorus doping (P-doping). The nitrogen-doped BC 3 QDs also displayed HOMO and LUMO energy levels (-5.373 eV and -2.103 eV, respectively) that are closer to TiO 2 and I − /I 3 − , making them more compatible for solar cell applications by increasing electron injection, fill factor, light collection efficiency, and open-circuit voltage. Despite an improved energy conversion potential, the N-doped BC 3 QDs' efficiency (72.34%) was impacted by rapid non-radiative recombination. These insights can guide the design of BC 3 QDs in solar energy applications, photocatalytic devices, and QD nano-composites for energy harvesting.
physics, condensed matter,chemistry, multidisciplinary
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