Facile Removal of Bulk Oxygen Vacancy Defects in Metal Oxides Driven by Hydrogen-Dopant Evaporation

Min Hu,Qing Zhu,Yuan Zhao,Guozhen Zhang,Chongwen Zou,Oleg Prezhdo,Jun Jiang
DOI: https://doi.org/10.1021/acs.jpclett.1c02687
2021-01-01
Abstract:Oxygen vacancy is a common defect in metal oxides that causes appreciable damage to material properties and performance. Removing bulk defects of oxygen vacancy (V-O) typically needs harsh conditions such as high-temperature annealing. Supported by firstprinciples simulations, we propose an effective strategy of removing V-O bulk defects in metal oxides by evaporating hydrogen dopants. The hydrogen dopants not only lower the migration barrier of V-O but also push V-O away due to their repulsive interaction. The coevaporation mechanism was supported by a neural networks potential-based molecular dynamics simulation, which shows that the migration of hydrogen dopants from inside to surface at 400 K promotes the migration of V-O as well. Our proof-of-concept study suggests an alternative and efficient way of modulating oxygen vacancies in metal oxides via reversible hydrogen doping.
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