Improved Photocatalytic Activity and Stability of InGaN Quantum Dots/c3n4 Heterojunction Photoelectrode for CO2 Reduction and Hydrogen Production

Zhiwei Xing,Xue Zhang,Wenxian Yang,Huan Li,Yukun Zhao,Tieshi Wei,Lifeng Bian,Guifeng Chen,Hua Qin,Shulong Lu
DOI: https://doi.org/10.1088/1361-6528/ac2450
IF: 3.5
2021-01-01
Nanotechnology
Abstract:Photocatalytic conversion of CO2to produce fuel is considered a promising approach to reduce CO2emissions and tackle energy crisis. GaN-based materials have been studied for CO2reduction because of their excellent optical properties and band structure. However, low photocatalytic activity and severe photocorrosion of GaN-based photoelectrode greatly limit their applications. In this work, photocatalytic activity was improved by adopting InGaN quantum dots (QDs) combined with C3N4nano-sheets as photoanode, and thus the efficiency of CO2reduction and the selectivity of hydrogen production were increased significantly. In addition, the photoelectron-chemical corrosion of photoelectrodes has been apparently controlled. InGaN QDs/C3N4has the highest CO and H2productions rates of 14.69μmol mol-1h-1and 140μmol mol-1h-1which were 2.2 times and 14.5 times than that of InGaN film photoelectrode, respectively. The enhancement of photocatalytic activity is attributed to C3N4modification and a large electric dipole forming on the surface of InGaN QDs, which facilitate the separation and transfer of photo-generated carriers and thus promote CO2reduction reaction. This work provides a promising strategy for the development of GaN-based photoanodes with superior stability and efficiency.
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