Abstract:Ultrawide bandgap (UWBG) gallium oxide (Ga2O3) represents an emerging semiconductor material with excellent chemical and thermal stability. It has a band gap of 4.5-4.9 eV, much wider than that of the GaN (3.4 eV) and 4H-SiC (3.2 eV). The monoclinic β-phase Ga2O3 represents the thermodynamically stable crystal among the known five known phases (α, β, γ, d, ε/κ). The breakdown field of β-Ga2O3 is predicted to be 6-8 MV/cm, which is much larger than that of the 4H-SiC and GaN. These unique properties make β-Ga2O3 a promising candidate for high power electronic device and solar blind photodetector applications. Single crystal β-Ga2O3 substrates can be synthesized by scalable and low cost melting based growth techniques. Metalorganic chemical vapor deposition (MOCVD) growth technique was demonstrated to produce high quality β-Ga2O3 thin films and its ternary (AlxGa1-x)2O3 alloys. Control of background and n-type doping in β-Ga2O3 will be discussed. Record carrier mobilities of 194 cm2/V·s at room temperature and ~10,000 cm2/V·s at low temperature were measured for MOCVD β-Ga2O3 thin films. Growth and fundamental understanding of β-(AlxGa1-x)2O3 are still limited. The incorporation of Al in beta-phase Ga2O3 has not been well understood, although it was predicted up to 60% of Al composition could be incorporated into β-Ga2O3. MOCVD growth of β-AlGaO targeting for Al composition of > 40% will be discussed. N-type doping capability as a function of Al composition in (AlxGa1-x)2O3 is another important fundamental question. Charge carrier transport properties in (AlxGa1-x)2O3 will be discussed. In addition, MOCVD growth of different phases of Ga2O3 and AlGaO will be presented. Acknowledgement: The authors acknowledge the funding support from the Air Force Office of Scientific Research FA9550-18-1-0479 (AFOSR, Dr. Ali Sayir) and the National Science Foundation (1810041, 2019753, 1755479).

Catalyst-assisted Heteroepitaxial Strategy for Highly Orderedβ-Ga2o3nanoarrays and Their Optical Property Investigation.

Catalyst-assisted heteroepitaxial strategy for highly ordered β-Ga 2 O 3 nanoarrays and their optical property investigation

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Heteroepitaxial growth of -Ga<sub>2</sub>O<sub>3</sub> thin films on c-plane sapphire substrates with -(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> intermediate buffer layer by mist-CVD method

β-Ga2O3 Nanostructures: Chemical Vapor Deposition Growth Using Thermally Dewetted Au Nanoparticles as Catalyst and Characterization

Epitaxial growth of a β-Ga2O3 (−201)-oriented thin film on a threefold symmetrical SrTiO3 (111) substrate for heterogeneous integration

Large Well-Aligned Nanostructures Of Beta-Ga2o3 Synthesized By Microwave Plasma Chemical Vapor Deposition

Oxygen-close-packed (310)-Plane Substrates of Β-Ga2o3 Grown by the Casting Method

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Facile Synthesis And Characterization Of Gallium Oxide (Beta-Ga2o3) 1d Nanostructures: Nanowires, Nanoribbons, And Nanosheets

Enhancing the Mechanical Strength Ofβ-Ga2o3 with Al Alloying

Microstructural Analysis of Heteroepitaxial Β-Ga2o3 Films Grown on (0001) Sapphire by Halide Vapor Phase Epitaxy

Homoepitaxial growth of high-quality GaN nanoarrays for enhanced UV luminescence

Orientation-Dependent Atomic-Scale Mechanism of $β$-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ Thin Film Epitaxial Growth

The lattice distortion of β-Ga2O3 film grown on c-plane sapphire

Systematic Investigation of the Growth Kinetics of Β -Ga2o3 Epilayer by Plasma Enhanced Chemical Vapor Deposition

Step flow growth of β-Ga2O3 films on off-axis 4H-SiC substrates by LPCVD

(Digital Presentation) MOCVD Growth of Ga2O3, Algao and Heterostructures

Controlled Epitaxial Growth of Vertically Well-Aligned ZnGa2O4 Nanowire Arrays on Sapphire Via a Novel Vapor-Liquid-Solid Process

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

Growth And Nitridation Of Beta-Ga2o3 Thin Films By Sol-Gel Spin-Coating Epitaxy With Post-Annealing Process