Abstract:Strong in-plane bonding and weak van der Waals interplanar interactions characterize a large number of layered materials, as epitomized by graphite. The advent of graphene (G), individual layers from graphite, and atomic layers isolated from a few other van der Waals bonded layered compounds has enabled the ability to pick, place, and stack atomic layers of arbitrary compositions and build unique layered materials, which would be otherwise impossible to synthesize via other known techniques. Here we demonstrate this concept for solids consisting of randomly stacked layers of graphene and hexagonal boron nitride (h-BN). Dispersions of exfoliated h-BN layers and graphene have been prepared by liquid phase exfoliation methods and mixed, in various concentrations, to create artificially stacked h-BN/G solids. These van der Waals stacked hybrid solid materials show interesting electrical, mechanical, and optical properties distinctly different from their starting parent layers. From extensive first principle calculations we identify (i) a novel approach to control the dipole at the h-BN/G interface by properly sandwiching or sliding layers of h-BN and graphene, and (ii) a way to inject carriers in graphene upon UV excitations of the Frenkell-like excitons of the h-BN layer(s). Our combined approach could be used to create artificial materials, made predominantly from inter planar van der Waals stacking of robust bond saturated atomic layers of different solids with vastly different properties.

Direct Visualization and Manipulation of Stacking Orders in Few-Layer Graphene by Dynamic Atomic Force Microscopy.

Stacking Order in Graphite Films Controlled by Van der Waals Technology

Imaging Stacking Order in Few-Layer Graphene

Stacking Control in Graphene-Based Materials: A Promising Method for Fascinating Physical Properties

Dynamic topological domain walls driven by lithium intercalation in graphene

Stacking control in graphene-based materials: a promising way for fascinating physical properties

Manipulation of Domain-Wall Solitons in Bi- and Trilayer Graphene

Stacking transition in bilayer graphene caused by thermally activated rotation

Scanning Tunneling Microscope Observations of Non-Ab Stacking of Graphene on Ni Films

Quantum Interference-Controlled Conductance Enhancement in Stacked Graphene-like Dimers.

Stacking Relations and Substrate Interaction of Graphene on Copper Foil

Uniaxial Strain-Induced Stacking Order Change in Trilayer Graphene

Artificially Stacked Atomic Layers: Toward New van der Waals Solids

Imaging graphene moiré superlattices via scanning Kelvin probe microscopy

Graphene: Layer-Stacking Growth and Electrical Transport of Hierarchical Graphene Architectures (adv. Mater. 20/2014)

Stacking transfer of wafer-scale graphene-based van der Waals superlattices

Domain-Dependent Surface Adhesion in Twisted Few-Layer Graphene: Platform for Moiré-Assisted Chemistry

Artificial Stacking for Large Twisted Bilayer Graphene Domain with Van Hove Singularity

Anisotropic Strain-Induced Soliton Movement Changes Stacking Order and Band Structure of Graphene Multilayers: Implications for Charge Transport

A Pathway between Bernal and Rhombohedral Stacked Graphene Layers with Scanning Tunneling Microscopy

High resolution imaging of reconstructed domains and moire patterns in functional van der Waals heterostructure devices