Abstract:Spin-orbit torque (SOT) is a candidate technique in next generation magnetic random-access memory (MRAM). Recently, experiments show that some material with low-symmetric crystalline or magnetic structures can generate anomalous SOT that has an out-of-plane component, which is crucial in switching perpendicular magnetization of adjacent ferromagnetic (FM) layer in the field-free condition. In this work, we analytically derive the threshold current of field-free perpendicular magnetization switching using the anomalous SOT. And we numerically calculate the track of the magnetic moment in a FM free layer when an applied current is smaller and greater than the threshold current. After that, we study the applied current dependence of the switching time and the switching energy consumption, which shows the minimum energy consumption decreases as out-of-plane torque proportion increases. Then we study the dependences of the threshold current on anisotropy strength, out-of-plane torque proportion, FM free layer thickness and Gilbert damping constant, and the threshold current shows negative correlation with the out-of-plane torque proportion and positive correlation with the other three parameters. Finally, we demonstrate that when the applied current is smaller than the threshold current, although it cannot switch the magnetization of FM free layer, it can still equivalently add an effective exchange bias field H_{bias} on the FM free layer. The H_{bias} is proportional to the applied current J_{SOT}, which facilitates the determination of the anomalous SOT efficiency. This work helps us to design new spintronic devices that favor field-free switching perpendicular magnetization using the anomalous SOT, and provides a way to adjust the exchange bias field, which is helpful in controlling FM layer magnetization depinning.

Multiple Modes of Perpendicular Magnetization Switching Scheme in Single Spin–orbit Torque Device

Implementing Multiple Modes of the Perpendicular Magnetization Switching within a Single Spin Orbit Torque Device.

L-Shaped Electrode Design For High-Density Spin-Orbit Torque Magnetic Random Access Memory With Perpendicular Shape Anisotropy

Field-free Spin–orbit-Torque Switching of Perpendicular Magnetization Aided by Uniaxial Shape Anisotropy

Field-free Approaches for Deterministic Spin–orbit Torque Switching of the Perpendicular Magnet

Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers

Field-Free Deterministic Magnetization Switching Induced by Interlaced Spin–Orbit Torques

Field-Free Magnetization Switching Induced by Bulk Spin-Orbit Torque in a (111)-Oriented CoPt Single Layer with In-Plane Remanent Magnetization

Field‐Free Spin‐Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect

Spin–orbit torque switching in a T-type magnetic configuration with current orthogonal to easy axes

Switching of Perpendicular Magnetization by Spin-Orbit Torque

Field-free spin-orbit torque switching enabled by interlayer Dzyaloshinskii-Moriya interaction

Role of Micromagnetic States on Spin-Orbit Torque-Switching Schemes.

The Central Role of Tilted Anisotropy for Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization

Strain-mediated spin-orbit torque switching for magnetic memory

Spin-orbit torques: Materials, physics, and devices

Threshold current of field-free perpendicular magnetization switching using anomalous spin-orbit torque

Field-free Spin-Orbit Torque-Induced Switching of Perpendicular Magnetization in a Ferrimagnetic Layer with a Vertical Composition Gradient.

Iridium Enabled Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Device

Progresses And Challenges Of Spin Orbit Torque Driven Magnetization Switching And Application (Invited)

Field-free Switching Enabled by Interplay of Spin-Orbit Torque and Interlayer Dzyaloshinskii-Moriya Interaction