Abstract:With strikingly high speed, data retention ability and storage density, resistive RAMs have emerged as a forerunning nonvolatile memory. Here we developed a Re-RAM with ultra-high density array of monocrystalline perovskite quantum wires (QWs) as the switching matrix with a metallic silver conducting pathway. The devices demonstrated high ON/OFF ratio of ∼107 and ultra-fast switching speed of ∼100 ps which is among the fastest in literature. The devices also possess long retention time of over 2 years and record high endurance of ∼6 × 106 cycles for all perovskite Re-RAMs reported. As a concept proof, we have also successfully demonstrated a flexible Re-RAM crossbar array device with a metal–semiconductor–insulator–metal design for sneaky path mitigation, which can store information with long retention. Aggressive downscaling to ∼14 nm lateral dimension produced an ultra-small cell effectively having 76.5 nm2 area for single bit storage. Furthermore, the devices also exhibited unique optical programmability among the low resistance states.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.1c00834?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.1c00834</a>.Materials and methods, structural and material characterizations, detailed mechanistic study (TEM, ToF-SIMS, and electrical characterizations), stability study on Re-RAM devices, detailed analysis of endurance, speed, and multilevel behavior, comparison study of figures-of-merit, sneaky path problem mitigation, down-scalability supporting data, and optical programmability (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.1c00834/suppl_file/nl1c00834_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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