Graphene/C60 composite film ultraviolet detector and preparation method thereof

Wang Fengqiu,Jiang Hongzhu,Qin Shuchao,Xu Yongbing,Zhang Rong

2018-01-01

Abstract:The invention provides an ultraviolet light detecting transistor based on a graphene/C60 composite absorbing layer. The transistor comprises a gate metal layer, a highly doped silicon gate, a gate dielectric layer, and a graphene/C60 composite absorbing layer, wherein the gate metal layer, the highly doped silicon gate, the gate dielectric layer, the graphene/C60 composite absorbing layer are successively arranged from bottom to top. The highly doped silicon gate and the gate dielectric layer simultaneously support the graphene/C60 composite absorbing layer film as the substrate of the whole transistor device. The graphene/C60 composite absorbing layer is composed of a single layer or multiple layers of graphene and the C60 with a certain thickness. The graphene is arranged at the lower end of C60 and is furthermore used as a C60 growth template, wherein the graphene contacts with the gate dielectric layer. Two ends of the graphene layer are respectively provided with a source electrode and a drain electrode. The graphene interacts with the C60 through a Van der Waals force, thereby forming a hetero junction transistor with an ultraviolet absorbing characteristic. Array integrationcan be performed on a plurality of ultraviolet light detecting transistors. The invention provides a specific plan of the array system for spectrum detection analysis and image identification.