Ultraviolet photodetector based on the hybrid graphene/phosphor field-effect transistor

Hao Li,Shubin Su,Chenhui Liang,Meizhen Huang,Xiang Ma,Guanghui Yu,Haihua Tao

DOI: https://doi.org/10.1016/j.optmat.2020.110439

IF: 3.754

2020-11-01

Optical Materials

Abstract:<p>Recently, a hybrid graphene/poly-BrNpA phosphor structure was used to fabricate rewritable p-n junction photodiode responsive to visible light. In this process, photoisomerization occurred under moderate ultraviolet (UV) irradiation (λ = 365 nm, optical intensity I_UV = 1.318 μW μm⁻²), and the subsequent water (H₂O) molecule adsorption facilitate charge transfer at the interface. In this study, we explore the feasibility of making UV photodetector based on the hybrid graphene/poly-BrNpA field-effect transistor. The incident UV light (λ = 365 nm, I_UV≤1.81 × 10⁻⁴ μW μm⁻²), which is at least four orders weaker than that used to induce observable photoisomerization in the phosphor, is mostly absorbed to create photo-induced electron-hole pairs. The subsequent separation and transfer of the photo-induced electrons to graphene contribute to high photocurrent by the photogating effect. The photodetector has a responsivity and specific detectivity up to 159 A W⁻¹ and 1.55 × 10¹¹ Jones, respectively, when biased at V_DS = 1 V. The photodetector has a slow response, especially to UV shut-off with the fall time τ_F up to 881 s. By virtue of H₂O molecule adsorption, τ_F can be reduced to 6.6 s by accelerating the reversion and recombination of electrons with the photo-induced holes trapped in the poly-BrNpA film through introducing defect states. This work brings a new perspective for developing photodetectors through combining the functional two-dimensional materials and phosphors.</p>

materials science, multidisciplinary,optics