Abstract:The investigation delved into the dielectric properties of Methylammonium Lead Iodide (MAPbI3) nanoparticles (NPs) and MAPbI3@rGO nanocomposites (NCs) across varying concentrations of rGO.The co-precipitation approach was used to synthesize a reduced graphene oxide (rGO)-doped MAPbI3 nanocomposite with varying rGO doping concentrations. Regarding potential uses in the material sectors, the nano-composite demonstrated intriguing and unique dielectric behaviour at certain rGO loadings. Temperature ranges (25–60°C), doping concentrations (at 0.5wt%, 1wt%, 5wt%, and 7wt%), and frequency ranges (10Hz–4MHz) (for permittivity and dielectric loss) were all adjusted in order to fully examine the dielectric characteristics. The dielectric response study indicates the significant enhancement of the relative permittivity of MAPbI3 in the presence of rGO (~500 times). The presence of many interfaces, ion migration, polar group reorientation and formation of nanocapacitor inside the MAPbI3@rGO composites are the causes of this significant enhancement in dielectric permittivity. As the temperature increases, the effective dipolar polarization of the composites increases, which in turn helps enhance relative permittivity. Nevertheless, at 60°C and 10Hz, the relative permittivity value for MAPbI3@rGO composites reaches nearly 2.8×106 (2000 times), the highest reported MAPbI3 composites to date. The composite material exhibited remarkable potential as a supercapacitor dielectric material, as evidenced by dielectric constant increases of up to 105 orders of magnitude following rGO injection. Moreover, the ac conductivity for MAPbI3@rGO is higher than pristine MAPbI3, possibly due to more charge conduction from the valence band to the conduction band for MAPbI3@rGO. The conductivity is also increased as a function of temperatures for all composites due to the decrement of electronic resistance. The dielectric loss value exhibits a downward trend (decreased by ~6 times), and the repair of the sp2 network in the graphene sheet is approved by the higher ac conductivity in MAPbI3@rGO NCs relative to MAPbI3 NPs. Furthermore, the NTCR behaviour enhances its potential as a superior material for energy storage applications. The overall forecasts indicate MAPbI3 augmented with rGOto be a potential candidate for energy storage capacitive devices in the electronic industry.

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